Preparation and Luminescent Properties of CsPbBr3/Si3N4 Composite

Fan-fan XU; Wen-dong NIE; Li-qin YAO; Sheng-an HE; Guang CHEN; Xin-yu YE

doi:10.37188/CJL.20210085

您当前的位置：

首页 >

文章列表页 >

Preparation and Luminescent Properties of CsPbBr₃/Si₃N₄ Composite

Synthesis and Properties of Materials | 更新时间：2021-06-18

- Preparation and Luminescent Properties of CsPbBr₃/Si₃N₄ Composite
  增强出版
- Chinese Journal of Luminescence Vol. 42, Issue 6, Pages: 829-837(2021)
- 作者机构：
  
  1.江西理工大学材料化学冶金学部, 江西赣州　 341000
  2.江西理工大学稀土学院, 江西赣州　 341000
  3.国家离子型稀土资源高效开发利用工程技术研究中心, 江西赣州　 341000
  4.江西省稀土发光材料与器件重点实验室, 江西赣州　 341000
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(51962005);Natural Science Foundation of Jiangxi Province of China(20192BAB206010);Award Program of Youth Jinggang Scholars program in Jiangxi Province([2018]82)
- DOI：10.37188/CJL.20210085
  CLC： O482.31
- Received：11 March 2021，
  
  Revised：24 March 2021，
  
  Published：01 June 2021
- 稿件说明：
移动端阅览
Fan-fan XU, Wen-dong NIE, Li-qin YAO, et al. Preparation and Luminescent Properties of CsPbBr₃/Si₃N₄ Composite[J]. Chinese journal of luminescence, 2021, 42(6): 829-837.
DOI：

Fan-fan XU, Wen-dong NIE, Li-qin YAO, et al. Preparation and Luminescent Properties of CsPbBr₃/Si₃N₄ Composite[J]. Chinese journal of luminescence, 2021, 42(6): 829-837. DOI： 10.37188/CJL.20210085.

摘要

近年来，钙钛矿量子点CsPb

(

=Cl

I)稳定性较差的问题引起了广泛关注。本文在室温下合成了稳定的CsPbBr

/Si

绿色荧光粉并将其应用于白光发光二极管(WLEDs)。通过X射线衍射(XRD)、扫描电子显微镜(SEM)、能谱仪(EDS)、激发和发射光谱(PL、PLE)等分析测试手段对CsPbBr

量子点和CsPbBr

/Si

荧光粉的结构、形貌、元素组成及光谱特性等进行了分析对比。实验结果表明，CsPbBr

/Si

绿色荧光粉的热稳定性、水稳定性、色稳定性均得到了显著提升。80 ℃时CsPbBr

/Si

荧光粉的发光强度能保持初始发光强度的87.4%，水中浸没120 min后发光强度能保持初始发光强度的75.5%。CsPbBr

/Si

复合材料的量子效率则由CsPbBr

量子点粉体的15.4%提升至35.4%。将CsPbBr

/Si

复合材料与K

SiF

∶Mn

红色荧光粉、InGaN基蓝光LED芯片封装制得的WLED器件色域为113.4% NTSC，流明效率达49.4 lm/W。

Abstract

In recent years

the poor stability of perovskite quantum dots CsPb

(

=Cl

I) has attracted extensive attention. In this paper

we synthesized stable CsPbBr

/Si

green phosphors at room temperature and applied to white light emitting diodes(WLEDs). The structure

morphology

element composition and luminescent properties of CsPbBr

and CsPbBr

/Si

phosphors were investigated by X-ray diffraction(XRD)

scanning electron microscopy(SEM)

energy dispersive spectrometer(EDS)

excitation and emission spectra(PL

PLE). The thermal stability

water and color stability of CsPbBr

/Si

green phosphor were obviously improved. The emission intensity of CsPbBr

/Si

phosphor can maintain 87.4% of the initial emission intensity at 80 ℃

and maintain 75.5% of the initial emission intensity after being immersed in deionized water for 120 min. The quantum efficiency of CsPbBr

/Si

composite is increased from 15.4% of CsPbBr

quantum dots powder to 35.4%. By packing the CsPbBr

/Si

phosphor with K

SiF

∶Mn

red phosphor and InGaN based blue LED chip

the color gamut of the WLED device is 113.4% NTSC and the luminous efficiency is 49.4 lm/W.

关键词

Keywords

references

PROTESESCU L , YAKUNIN S , BODNARCHUK M I , et al . Nanocrystals of cesium lead halide perovskites (CsPbX3, X=Cl, Br, and I): novel optoelectronic materials showing bright emission with wide color gamut [J]. Nano Lett. , 2015 , 15 ( 6 ): 3692 - 3696 .

王巍 , 李一 , 宁平凡 , 等 . 广色域钙钛矿量子点/荧光粉转换白光LED [J]. 发光学报 , 2018 , 39 ( 5 ): 627 - 632 .

WANG W , LI Y , NING P F , et al . Perovskite quantum dot/powder phosphor converted white light LEDs with wide color gamut [J]. Chin. J. Lumin. , 2018 , 39 ( 5 ): 627 - 632 . (in Chinese)

JI W Y , LIU S H , ZHANG H , et al . Ultrasonic spray processed, highly efficient all-inorganic quantum-dot light-emitting diodes [J]. ACS Photonics , 2017 , 4 ( 5 ): 1271 - 1278 .

SONG J Z , LI J H , LI X M , et al . Quantum dot light-emitting diodes based on inorganic perovskite cesium lead halides (CsPbX3) [J]. Adv. Mater. , 2015 , 27 ( 44 ): 7162 - 7167 .

MALI S S , SHIM C S , HONG C K . Highly stable and efficient solid-state solar cells based on methylammonium lead bromide (CH3NH3PbBr3) perovskite quantum dots [J]. NPG Asia Mater. , 2015 , 7 ( 8 ): e208-1-9 .

TRAVIS W , GLOVER E N K , BRONSTEIN H , et al . On the application of the tolerance factor to inorganic and hybrid halide perovskites:a revised system [J]. Chem. Sci. , 2016 , 7 ( 7 ): 4548 - 4556 .

郭洁 , 陆敏 , 孙思琪 , 等 . 基于CsPbBr3钙钛矿量子点的高柔性绿光发光二极管 [J]. 发光学报 , 2020 , 41 ( 3 ): 233 - 240 .

GUO J , LU M , SUN S Q , et al . Highly flexible green light-emitting diode based on CsPbBr3 perovskite quantum dots [J]. Chin. J. Lumin. , 2020 , 41 ( 3 ): 233 - 240 . (in Chinese)

YANG G L , ZHONG H Z . Organometal halide perovskite quantum dots:synthesis, optical properties, and display applications [J]. Chin. Chem. Lett. , 2016 , 27 ( 8 ): 1124 - 1130 .

PAN J , QUAN L N , ZHAO Y B , et al . Highly efficient perovskite-quantum-dot light-emitting diodes by surface engineering [J]. Adv. Mater. , 2016 , 28 ( 39 ): 8718 - 8725 .

HUANG C Y , ZOU C , MAO C Y , et al . CsPbBr3 perovskite quantum dot vertical cavity lasers with low threshold and high stability [J]. ACS Photonics , 2017 , 4 ( 9 ): 2281 - 2289 .

XU H Z , DUAN J L , ZHAO Y Y , et al . 9.13%-efficiency and stable inorganic CsPbBr3 solar cells. lead-free CsSnB3-xIx quantum dots promote charge extraction [J]. J. Power Sources , 2018 , 399 : 76 - 82 .

MING H , LIU L L , HE S A , et al . An ultra-high yield of spherical K2NaScF6∶Mn4+ red phosphor and its application in ultra-wide color gamut liquid crystal displays [J]. J. Mater. Chem. C , 2019 , 7 ( 24 ): 7237 - 7248 .

CHEN J S , LIU D Z , AL-MARRI M J , et al . Photo-stability of CsPbBr3 perovskite quantum dots for optoelectronic application [J]. Sci. China Mater. , 2016 , 59 ( 9 ): 719 - 727 .

MALGRAS V , HENZIE J , TAKEI T , et al . Stable blue luminescent CsPbBr3 perovskite nanocrystals confined in mesoporous thin films [J]. Angew. Chem. Int. Ed. , 2018 , 57 ( 29 ): 8881 - 8885 .

XUAN T T , YANG X F , LOU S Q , et al . Highly stable CsPbBr3 quantum dots coated with alkyl phosphate for white light-emitting diodes [J]. Nanoscale , 2017 , 9 ( 40 ): 15286 - 15290 .

CUI J , XU F F , DONG Q , et al . Facile, low-cost, and large-scale synthesis of CsPbBr3 nanorods at room-temperature with 86% photoluminescence quantum yield [J]. Mater. Res. Bull. , 2020 , 124 : 110731-1-6 .

HE X , YU C , YU M M , et al . Synthesis of perovskite CsPbBr3 quantum dots/porous boron nitride nanofiber composites with improved stability and their reversible optical response to ammonia [J]. Inorg. Chem. , 2020 , 59 ( 2 ): 1234 - 1241 .

QIU L , HAO J R , FENG Y X , et al . One-pot in situ synthesis of CsPbX3@h-BN (X=Cl, Br, I) nanosheet composites with superior thermal stability for white LEDs [J]. J. Mater. Chem. C , 2019 , 7 ( 14 ): 4038 - 4042 .

LI Y , DONG L B , CHEN N , et al . Room-temperature synthesis of two-dimensional hexagonal boron nitride nanosheet-stabilized CsPbBr3 perovskite quantum dots [J]. ACS Appl. Mater. Interfaces , 2019 , 11 ( 8 ): 8242 - 8249 .

YOON H C , LEE S , SONG J K , et al . Efficient and stable CsPbBr3 quantum-dot powders passivated and encapsulated with a mixed silicon nitride and silicon oxide inorganic polymer matrix [J]. ACS Appl. Mater. Interfaces , 2018 , 10 ( 14 ): 11756 - 11767 .

HUANG C , SUN W Z , LIU S , et al . Highly controllable lasing actions in lead halide perovskite-Si3N4 hybrid micro-resonators [J]. Laser Photon. Rev. , 2019 , 13 ( 3 ): 1800189-1-11 .

ZHOU G J , XU Y , XIA Z G . Perovskite multiple quantum wells on layered materials toward narrow-band green emission for backlight display applications [J]. ACS Appl. Mater. Interfaces , 2020 , 12 ( 24 ): 27386 - 27393 .

LI F , LIU Y , WANG H L , et al . Postsynthetic surface trap removal of CsPbX3 (X=Cl, Br, or I) quantum dots via a ZnX2/hexane solution toward an enhanced luminescence quantum yield [J]. Chem. Mater. , 2018 , 30 ( 23 ): 8546 - 8554 .

SHAO H , BAI X , PAN G C , et al . Highly efficient and stable blue-emitting CsPbBr3@SiO2 nanospheres through low temperature synthesis for nanoprinting and WLED [J]. Nanotechnology , 2018 , 29 ( 28 ): 285706 .

CAI Y T , WANG L , ZHOU T L , et al . Improved stability of CsPbBr3 perovskite quantum dots achieved by suppressing interligand proton transfer and applying a polystyrene coating [J]. Nanoscale , 2018 , 10 ( 45 ): 21441 - 21450 .

ZHANG M L , LI Y , DU K M , et al . One-step conversion of CsPbBr3 into Cs4PbBr6/CsPbBr3@Ta2O5 core-shell microcrystals with enhanced stability and photoluminescence [J]. J. Mater. Chem. C , 2021 , 9 ( 4 ): 1228 - 1234 .

DI X X , SHEN L D , JIANG J T , et al . Efficient white LEDs with bright green-emitting CsPbBr3 perovskite nanocrystal in mesoporous silica nanoparticles [J]. J. Alloys Compd. , 2017 , 729 : 526 - 532 .

HUANG S X , YANG S , WANG Q , et al . Cs4PbBr6/CsPbBr3 perovskite composites for WLEDs:pure white, high luminous efficiency and tunable color temperature [J]. RSC Adv. , 2019 , 9 ( 72 ): 42430 - 42437 .

Views

270

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Potassium-assisted Enhancement of Fluorescence Stability of CsPbBr₃ Perovskite Quantum Dots and Their Application in QLEDs

Performance Enhancement of MAPbBr₃ Perovskite Quantum Dot for Wide Color Gamut LED via Double Short-chain Ligand Modification

Synthesis of Halide Perovskite and Metal-organic Framework Composites and Their Research Progress in Field of Optoelectronics

Terpinene-induced Slow Growth of Deep Blue CsPbBr₃ Quantum Dots at Room Temperature

Related Author

Fan-fan XU

Wen-dong NIE

Li-qin YAO

Sheng-an HE

Guang CHENG

Xin-yu YE

Yue CHANG

Hai-peng ZHAO

Related Institution

Faculty of Materials， Metallurgy and Chemistry， Jiangxi University of Science and Technology

National Engineering Research Center for Ionic Rare Earth

School of Rare Earth， Jiangxi University of Science and Technology

Key Laboratory of Rare Earth Luminescence Materials and Devices of Jiangxi Province

College of Materials and Chemical Engineering, Henan University of Urban Construction

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰