Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching

Xiao-hao GUO; Lei HU; Xiao-yu REN; Si WU; Li-qun ZHANG; Zhi-jun ZHANG; Hui YANG; Jian-ping LIU

doi:10.37188/CJL.20210037

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Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching

Luminescence Industry and Technology Frontier | 更新时间：2021-06-18

- Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching
- Chinese Journal of Luminescence Vol. 42, Issue 6, Pages: 889-895(2021)
- 作者机构：
  
  1.上海大学材料科学与工程学院, 上海　 200444
  2.中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室, 江苏苏州　 215123
- 作者简介：
- 基金信息：
  
  National Key Research and Development Program of China(2017YFE0131500;2017YFB0405000);National Natural Science Foundation of China(61834008;61574160;61804164;61704184);China Postdoctoral Science Foundation(2018M630619);Natural Science Foundation of Jiangsu province(BK20180254)
- DOI：10.37188/CJL.20210037
  CLC： TN256
- Received：23 January 2021，
  
  Revised：18 February 2021，
  
  Published：01 June 2021
- 稿件说明：
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Xiao-hao GUO, Lei HU, Xiao-yu REN, et al. Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching[J]. Chinese journal of luminescence, 2021, 42(6): 889-895.
DOI：

Xiao-hao GUO, Lei HU, Xiao-yu REN, et al. Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching[J]. Chinese journal of luminescence, 2021, 42(6): 889-895. DOI： 10.37188/CJL.20210037.

摘要

研究了基于BCl

/Cl

电感耦合等离子体(ICP)刻蚀对氮化镓基分布式反馈激光器中光栅的刻蚀，详细研究了刻蚀气体BCl

/Cl

流量比和压强对刻蚀台面侧壁的粗糙度、陡直度以及刻蚀速率的影响，发现以SiO

作为硬掩膜，刻蚀速率、台面侧壁粗糙度以及陡直度随着刻蚀气体BCl

/Cl

流量比以及压强变化有着显著变化。保持ICP功率和射频功率分别为300 W和100 W，当刻蚀气体BCl

/Cl

流量比为1、压强为1.33 Pa(10 mTorr)，最终得到200.6 nm/min的可控刻蚀速率、倾角85.3°且光滑的台面侧壁，实现了在保证光栅侧壁光滑的同时提升侧壁倾角。陡直且光滑的光栅对于提升氮化镓基分布式反馈激光器的器件性能及其稳定性非常重要。

Abstract

Inductively coupled plasma(ICP) etching parameters for GaN grating fabrication are investigated. The effects of etch parameters

including the etching gas BCl

/Cl

flow ratio and pressure

on the roughness and steepness of the mesa sidewall and etching rate are discussed. It is found that by using SiO

as the hard mask

the roughness and steepness of the etching mesa sidewall was greatly influenced by the etching parameters. A controllable etching rate of 200.6 nm/min

angle of 85.3° and smooth mesa sidewall are obtained using BCl

/Cl

ratio of 1∶1

1.33 Pa(10 mTorr) pressure

ICP power of 300 W and RF power of 100 W. Finally

the angle of the sidewall is increased while ensuring the smooth sidewall of the grating. Steep and smooth gratings are very important for improving the device performance and stability of GaN-based distributed feedback laser diode.

关键词

Keywords

references

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Related Author

Jian-ping LIU

Xiao-hao GUO

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Zhi-jun Zhang

Li-qun ZHANG

Si WU

Xiao-yu REN

Lei HU

Related Institution

Key Laboratory of Nanodevices and Applications， Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences

School of Materials Science and Engineering， Shanghai University

College of Materials Science and Opto-Electronic Technology， University of Chinese Academy of Sciences

Research and Development Center for Wide Bandgap Semiconductors， Institute of Semiconductors， Chinese Academy of Sciences

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences

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