Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching

Xiao-hao GUO; Lei HU; Xiao-yu REN; Si WU; Li-qun ZHANG; Zhi-jun ZHANG; Hui YANG; Jian-ping LIU

doi:10.37188/CJL.20210037

您当前的位置：

首页 >

文章列表页 >

Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching

Luminescence Industry and Technology Frontier | 更新时间：2021-06-18

- Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching
- Chinese Journal of Luminescence Vol. 42, Issue 6, Pages: 889-895(2021)
- 作者机构：
  
  1.上海大学材料科学与工程学院, 上海　 200444
  2.中国科学院苏州纳米技术与纳米仿生研究所纳米器件与应用重点实验室, 江苏苏州　 215123
- 作者简介：
- 基金信息：
  
  National Key Research and Development Program of China(2017YFE0131500;2017YFB0405000);National Natural Science Foundation of China(61834008;61574160;61804164;61704184);China Postdoctoral Science Foundation(2018M630619);Natural Science Foundation of Jiangsu province(BK20180254)
- DOI：10.37188/CJL.20210037
  CLC： TN256
- Published：01 June 2021，
  
  Received：23 January 2021，
  
  Revised：18 February 2021，
扫描看全文
Xiao-hao GUO, Lei HU, Xiao-yu REN, et al. Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching. [J]. Chinese Journal of Luminescence 42(6):889-895(2021)
DOI：

Xiao-hao GUO, Lei HU, Xiao-yu REN, et al. Fabrication of GaN-based Grating by Optimized Inductively Coupled Plasma Etching. [J]. Chinese Journal of Luminescence 42(6):889-895(2021) DOI： 10.37188/CJL.20210037.

摘要

研究了基于BCl

/Cl

电感耦合等离子体(ICP)刻蚀对氮化镓基分布式反馈激光器中光栅的刻蚀，详细研究了刻蚀气体BCl

/Cl

流量比和压强对刻蚀台面侧壁的粗糙度、陡直度以及刻蚀速率的影响，发现以SiO

作为硬掩膜，刻蚀速率、台面侧壁粗糙度以及陡直度随着刻蚀气体BCl

/Cl

流量比以及压强变化有着显著变化。保持ICP功率和射频功率分别为300 W和100 W，当刻蚀气体BCl

/Cl

流量比为1、压强为1.33 Pa(10 mTorr)，最终得到200.6 nm/min的可控刻蚀速率、倾角85.3°且光滑的台面侧壁，实现了在保证光栅侧壁光滑的同时提升侧壁倾角。陡直且光滑的光栅对于提升氮化镓基分布式反馈激光器的器件性能及其稳定性非常重要。

Abstract

Inductively coupled plasma(ICP) etching parameters for GaN grating fabrication are investigated. The effects of etch parameters

including the etching gas BCl

/Cl

flow ratio and pressure

on the roughness and steepness of the mesa sidewall and etching rate are discussed. It is found that by using SiO

as the hard mask

the roughness and steepness of the etching mesa sidewall was greatly influenced by the etching parameters. A controllable etching rate of 200.6 nm/min

angle of 85.3° and smooth mesa sidewall are obtained using BCl

/Cl

ratio of 1∶1

1.33 Pa(10 mTorr) pressure

ICP power of 300 W and RF power of 100 W. Finally

the angle of the sidewall is increased while ensuring the smooth sidewall of the grating. Steep and smooth gratings are very important for improving the device performance and stability of GaN-based distributed feedback laser diode.

关键词

氮化镓分布式反馈光栅电感耦合等离子体刻蚀BCl3/Cl2

Keywords

gallium nitridedistributed feedbackgratinginductively coupled plasma etchingBCl3/Cl2

references

HOLGUíN-LERMA J A, NG T K, OOI B S. Narrow-line InGaN/GaN green laser diode with high-order distributed-feedback surface grating [J].Appl. Phys. Express, 2019, 12(4):042007-1-4.

DENG Z J, LI J Z, LIAO M L, et al. InGaN/GaN distributed feedback laser diodes with surface gratings and sidewall gratings [J].Micromachines, 2019, 10(10):699.

KANG J H, WENZEL H, FREIER E, et al. Continuous-wave operation of DFB laser diodes based on GaN using 10th-order laterally coupled surface gratings [J].Opt. Lett., 2020, 45(4):935-938.

ZHANG H J, COHEN D A, CHAN P, et al. Continuous-wave operation of a semipolar InGaN distributed-feedback blue laser diode with a first-order indium tin oxide surface grating [J].Opt. Lett., 2019, 44(12):3106-3109.

SLIGHT T J, STANCZYK S, WATSON S, et al. Continuous-wave operation of (Al, In)GaN distributed-feedback laser diodes with high-order notched gratings [J].Appl. Phys. Express, 2018, 11(11):112701.

LI X L, MA P, JI X L, et al. Implementation of slow and smooth etching of GaN by inductively coupled plasma [J].J. Semicond., 2018, 39(11):113002-1-6.

NAHHAS A M. Review of GaN nanostructured based devices [J].Am. J.Nanomater., 2018, 6(1):1-14.

LI Z C, HUANG R, CHEN X, et al. The significant effect of carbon and oxygen contaminants at Pd/p-GaN interface on its Ohmic contact characteristics [J].Phys. Status Solidi(A), 2020, 218(4):2000603.

TU Z Z, LV L L, SONG R X, et al. Etch tapered angle on the influence of GaN membrane grating reflectance spectra [J].Optik, 2018, 165:351-355.

ZHOU S J, CAO B, LIU S. Dry etching characteristics of GaN using Cl2/BCl3 inductively coupled plasmas [J].Appl. Surf. Sci., 2010, 257(3):905-910.

DOUGLAS E A, SANCHEZ C A, KAPLAR R J, et al. Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN [J].J. Vac. Sci. Technol. A, 2017, 35(2):021305.

ZHAO Y F, WANG H, ZHANG W, et al. Controllable process of nanostructured GaN by maskless inductively coupled plasma (ICP) etching [J].J. Micromech. Microeng., 2017, 27(11):115004.

SUN Y, KANG X W, ZHENG Y K, et al. Optimization of mesa etch for a quasi-vertical gan schottky barrier diode (SBD) by inductively coupled plasma (ICP) and device characteristics [J].Nanomaterials, 2020, 10(4):657-1-13.

LI W Y, LUO Y, XIONG B, et al. Fabrication of GaN-based ridge waveguides with very smooth and vertical sidewalls by combined plasma dry etching and wet chemical etching [J].Phys. Status Solidi (A), 2015, 212(10):2341-2344.

YU C C, CHU C F, TSAI J Y, et al. Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching [J].Jpn. J. Appl. Phys., 2002, 41(8B):L910-L912.

ROSLI S A, AZIZ A A, HASHIM M R. ICP-RIE dry etching using Cl2-based on GaN [J].Sains Malays., 2011, 40(1):79-82.

HAN Y J, XUE S, GUO W P, et al. Highly selective dry etching of GaN over AlGaN using inductively coupled Cl2/N2/O2 plasmas [J].Jpn. J. Appl. Phys., 2003, 42(10A):L1139-L1141.

RAWAL D S, SEHGAL B K, MURALIDHARAN R, et al. Effect of BCl3 concentration and process pressure on the GaN mesa sidewalls in BCl3/Cl2 based inductively coupled plasma etching [J].Vacuum, 2012, 86(12):1844-1849.

QIU R F, LU H, CHEN D J, et al. Optimization of inductively coupled plasma deep etching of GaN and etching damage analysis [J].Appl. Surf. Sci., 2011, 257(7):2700-2706.

LIU Z, WANG Y J, XIA X X, et al. Fabrication of GaN hexagonal cones by inductively coupled plasma reactive ion etching [J].J. Vac. Sci. Technol. B, 2016, 34(4):041226-1-4.

TAHHAN M, NEDY J, CHAN S H, et al. Optimization of a chlorine-based deep vertical etch of GaN demonstrating low damage and low roughness [J].J. Vac. Sci. Technol. A, 2016, 34(3):031303.

ZHOU S J, CAO B, LIU S. Optimized ICP etching process for fabrication of oblique GaN sidewall and its application in LED [J].Appl. Phys. A, 2011, 105(2):369-377.

Views

283

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Cathodoluminescence of Eu-implanted GaN Thin Films

Effect of Undoped GaN Layer Thickness on The Wavelength Uniformity of GaN Based Blue LEDs

Roughness Decreasing of Silicon Carbide Hologram-ion Beam Etching Grating by Using Surface Modification Technique

Grating Based Absorption Layer for Enhanced Absorption in Gallium Arsenide Solar Cells

Related Author

Jian-ping LIU

Hui YANG

Zhi-jun Zhang

Li-qun ZHANG

Si WU

Xiao-yu REN

Lei HU

Xiao-hao GUO

Related Institution

School of Materials Science and Engineering， Shanghai University

Key Laboratory of Nanodevices and Applications， Suzhou Institute of Nano-Tech and Nano-Bionics， Chinese Academy of Sciences

Jiangsu Key Laboratory of Micro and Nano Heat Fluid Flow Technology and Energy Application, School of Mathematics and Physics, Suzhou University of Science and Technology

Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences

Key Laboratory of Interface Science and Engineering in Advanced Materials, Ministry of Education, Taiyuan University of Technology

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰