Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips

Yu-qi DU; Zhen-fu WANG; Xiao-Ying ZHANG; Guo-wen YANG; Te LI; Yu-xian LIU; Bo LI; Yi-dong CHANG; Yu-liang ZHAO; Yu LAN

doi:10.37188/CJL.20210014

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Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips

Device Fabrication and Physics | 更新时间：2021-05-20

- Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips
- Chinese Journal of Luminescence Vol. 42, Issue 5, Pages: 674-681(2021)
- 作者机构：
  
  1.中国科学院西安光学精密机械研究所　瞬态光学与光子技术国家重点实验室，陕西　西安　 710119
  2.中国科学院大学，北京　 100049
  3.陕西省计量科学研究院，陕西　西安　 710100
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61504167);the Natural Science Foundation of Shaanxi Province,China(2019ZY-CXPT-03-05;2018JM6010;2015JQ6263);the Talent Project of Science and Technology Department of Shaanxi Province(2017KJXX-72)
- DOI：10.37188/CJL.20210014
  CLC： TN248.4
- Published：01 May 2021，
  
  Received：05 January 2021，
  
  Revised：19 January 2021，
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Yu-qi DU, Zhen-fu WANG, Xiao-Ying ZHANG, et al. Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips. [J]. Chinese Journal of Luminescence 42(5):674-681(2021)
DOI：

Yu-qi DU, Zhen-fu WANG, Xiao-Ying ZHANG, et al. Testing Characterization and Simulating Optimization of High-power Laser Diode Array Chips. [J]. Chinese Journal of Luminescence 42(5):674-681(2021) DOI： 10.37188/CJL.20210014.

摘要

针对高功率半导体激光芯片工作温度升高易引起芯片性能退化和失效问题，首先理论分析了工作温度对内量子效率的影响机理。其次，为量化温度影响芯片稳定性的主要因素，自主搭建高功率半导体激光列阵芯片测试系统，研究15~60 ℃半导体激光列阵芯片的温度特性，分析了5种能量损耗分布及其随温度的变化趋势。实验结果表明，当温度由15 ℃升高至60 ℃，载流子泄漏损耗占比由2.30%急剧上升至11.36%，是造成半导体激光芯片在高温下电光转换效率降低的主要因素。最后进行了外延结构的仿真优化，仿真结果表明，提高波导层Al组分至20%，能有效限制载流子泄漏，平衡Al组分增加带来的串联电阻增大问题，可以获得高效率输出。该研究对高温下半导体激光芯片的设计具有重要的指导意义。

Abstract

Due to small size

light weight

high efficiency and long operation life

high power semiconductor laser array chips have gradually entered into mass-markets and emerged applications

such as laser pumping

materials processing

medical therapy and lidar. However

limited by high-temperature working environments such as material processing

the development of high power semiconductor laser is hindered. Since laser diode arrays work in high-temperature working environments and generate great quantity during operating

the output power and reliability of high power semiconductor laser is decreased

which is caused by reducing in slope efficiency

increasing in threshold current

and wavelength redshift. Hence

it is vital to research the optoelectronic performance and laser diode array optimization of semiconductor laser under high temperature. To improve the high temperature performance of high-power semiconductor laser chips

firstly

the influence mechanism of environment temperature on internal quantum efficiency is analyzed theoretically. Secondly

in order to quantify the main factors affecting the stability of the chip

the high-power semiconductor laser array chips test system was built to study the characteristics of the laser diode array chips at 15-60 ℃

and analyze energy loss distribution at various temperatures. The experimental results show that when the temperature rises from 15 ℃ to 60 ℃

the percentage of carrier leakage loss increases sharply from 2.30% to 11.36%

which is the main factor affecting the high temperature operation of semiconductor laser array chips. Finally

the chip structure simulation shows that increasing the Al composition of the waveguide layer to 20% can effectively limit carrier leakage

balance the increase in series resistance caused by the increase of Al composition

and obtain high electro-optical conversion efficiency. This research can provide a reference for the design of high-temperature laser diode array chips.

关键词

高功率半导体激光列阵芯片高温特性能量损耗分布

Keywords

high powerlaser diode array chipshigh temperature characteristicenergy loss distribution

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Related Author

Yu-Liang ZHAO

Yu-Qi DU

Zhen-Fu WANG

Guo-Wen YANG

Te LI

Yu-Xian LIU

Bo LI

Yi-Dong CHANG

Related Institution

State Key Laboratory of Transient Optics and Photonics， Xi’an Institute of Optics and Precision Mechanics， Chinese Academy of Sciences

Technical Institute of Physics and Chemistry， Chinese Academy of Sciences

Tongfang Zhongke Chaoguang Technology Co.， Ltd

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences

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