In order to improve the pumping efficiency of high-power semiconductor lasers, the drift coefficient of the output wavelength of the semiconductor laser with temperature must be reduced. The high-power distributed feedback laser array is fabricated using MOCVD epitaxial technology, nano-imprinting, dry etching and wet etching. The cavity length of this laser array is 1 mm, and the wavelength is 808 nm at 25 ℃. By testing the ,P-V-I, curve and spectrogram at different heat sink temperatures, it is shown that when the pulse working current is 148 A, the output power of the laser array can reach 100 W. The slope efficiency is 0.9 W/A. The FWHM of the spectrum is 0.5 nm. The side mode suppression ratio can reach 40 dB. The thermal drift coefficient of the emission wavelength is 0.056 nm/℃. Single-array wavelength lock ranges up to 50 ℃ and total lock ranges 100 ℃. In addition, the influence of the cavity surface coating on the wavelength locking effect is also analyzed.
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