Development of 808 nm High-power Distributed Feedback Laser Array

Xue-feng BAN; Cui-luan WANG; Su-ping LIU; Xiao-yu MA

doi:10.37188/CJL.20200396

您当前的位置：

首页 >

文章列表页 >

Development of 808 nm High-power Distributed Feedback Laser Array

Device Fabrication and Physics | 更新时间：2021-04-23

- Development of 808 nm High-power Distributed Feedback Laser Array
- Chinese Journal of Luminescence Vol. 42, Issue 4, Pages: 504-509(2021)
- 作者机构：
  
  1.中国科学院半导体研究所光电子器件国家工程中心，北京　 100083
  2.中国科学院大学材料科学与光电技术学院，北京　 100049
- 作者简介：
- 基金信息：
- DOI：10.37188/CJL.20200396
  CLC： TN248.4
- Published：01 April 2021，
  
  Received：23 December 2020，
  
  Revised：15 January 2021，
- 稿件说明：
移动端阅览
XUE-FENG BAN, CUI-LUAN WANG, SU-PING LIU, et al. Development of 808 nm High-power Distributed Feedback Laser Array. [J]. Chinese journal of luminescence, 2021, 42(4): 504-509.
DOI：

XUE-FENG BAN, CUI-LUAN WANG, SU-PING LIU, et al. Development of 808 nm High-power Distributed Feedback Laser Array. [J]. Chinese journal of luminescence, 2021, 42(4): 504-509. DOI： 10.37188/CJL.20200396.

摘要

为提高大功率半导体激光器的泵浦效率，必须降低半导体激光器输出波长随温度的漂移系数。采用MOCVD外延技术、纳米压印和干法刻蚀附加湿法腐蚀等工艺制备了大功率分布反馈激光器列阵。激光器列阵的腔长为1 mm

25 ℃时中心波长为808 nm，通过测试不同热沉温度下的

P-V-I

曲线和光谱图，表明当脉冲工作电流为148 A时，激光器列阵的输出功率可以达到100 W，斜率效率为0.9 W/A，光谱的FWHM为0.5 nm，边模抑制比可以达到40 dB，出射波长随温度的漂移系数为0.056 nm/℃，单列阵波长锁定范围可达50 ℃，总锁定范围100 ℃。另外还分析了腔面镀膜对波长锁定效果的影响。

Abstract

In order to improve the pumping efficiency of high-power semiconductor lasers

the drift coefficient of the output wavelength of the semiconductor laser with temperature must be reduced. The high-power distributed feedback laser array is fabricated using MOCVD epitaxial technology

nano-imprinting

dry etching and wet etching. The cavity length of this laser array is 1 mm

and the wavelength is 808 nm at 25 ℃. By testing the

P-V-I

curve and spectrogram at different heat sink temperatures

it is shown that when the pulse working current is 148 A

the output power of the laser array can reach 100 W. The slope efficiency is 0.9 W/A. The FWHM of the spectrum is 0.5 nm. The side mode suppression ratio can reach 40 dB. The thermal drift coefficient of the emission wavelength is 0.056 nm/℃. Single-array wavelength lock ranges up to 50 ℃ and total lock ranges 100 ℃. In addition

the influence of the cavity surface coating on the wavelength locking effect is also analyzed.

关键词

激光器分布反馈激光器列阵内置布拉格光栅波长稳定

Keywords

lasersdistributed feedback laser diode arrayinner Bragg gratingwavelength stabilization

references

CHEN Y, KUSHAWAHA V. Rotating-disk diode-pumped continuous-wave Nd:YAG laser [J].Appl. Phys. B, 1995, 61(5):525-528.

LIU J H, WANG C Q, LÜ J H, et al. Diode-laser-array single-end-pumped 5 W Nd:YVO4/KTP continuous-wave solid-state green laser [J].Chin. Phys. Lett., 1999, 16(7):508-509.

PASCHOTTA R, NILSSON J, TROPPER A C, et al. Ytterbium-doped fiber amplifiers [J].IEEE J. Quantum Electron., 1997, 33(7):1049-1056.

李江，杨志勇，吴玉松，等. Nd3+离子掺杂YAG激光透明陶瓷的光谱性质及Judd-Ofelt理论分析 [J].无机材料学报，2008，23(3):429-433.

LI J, YANG Z Y, WU Y S, et al. Spectroscopic properties and judd-ofelt theory analysis of Nd:YAG transparent laser ceramic [J].J. Inorg. Mater., 2008, 23(3):429-433. (in Chinese)

VENTRUDO B F, ROGERS G A, LICK G S, et al. Wavelength and intensity stabilisation of 980 nm diode lasers coupled to fibre Bragg gratings [J].Electron. Lett., 1994, 30(25):2147-2149.

VOLODIN B L, DOLGY S V, MELNIK E D, et al. Wavelength stabilization and spectrum narrowing of high-power multimode laser diodes and arrays by use of volume Bragg gratings [J].Opt. Lett., 2004, 29(16):1891-1893.

江鹏飞，周燕，谢福增. 闪耀光栅外腔反馈压窄半导体激光器线宽技术的研究 [J].光学技术，2006，32(6):869-870.

JIANG P F, ZHOU Y, XIE F Z. Study of blaze grating feedback external-cavity semiconductor laser with narow-linewidth [J].Opt. Tech., 2006, 32(6):869-870. (in Chinese)

CRUMP P, BROX O, BUGGE F, et al. High-power, high-efficiency monolithic edge-emitting GaAs-based lasers with narrow spectral widths [J].Semicond. Semimet., 2012, 86:49-91.

EARLES T, MAWST, L J, BOTEZ D. 1.1 W continuous-wave, narrow spectral width (<1 Å) emission from broad-stripe, distributed-feedback diode lasers(λ=0.893 μm) [J].Appl. Phys. Lett., 1998, 73(15):2072-2074.

KLEHR A, BUGGE F, ERBERT G, et al. High-power broad-area 808 nm DFB lasers for pumping solid state lasers [C].Proceedings Volume 6133, Novel In-plane Semiconductor Lasers V, San Jose, California, United States, 2006.

HE Y, AN H, CAI J, et al. 808 nm broad area DFB laser for solid-state laser pumping application [J].Electron. Lett., 2009, 45(3):163-164.

班雪峰，赵懿昊，王翠鸾，等. 808 nm半导体分布反馈激光器的光栅设计与制作 [J].红外与激光工程，2019，48(11):1105003-1-10.

BAN X F, ZHAO Y H, WANG C L, et al. Design and preparation of grating for 808 nm semiconductor distributed feedback laser [J].Infrared Laser Eng., 2019, 48(11):1105003-1-10. (in Chinese)

Views

145

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Compact and Efficient Hundred-watt Level 2 μm Rod Tm∶YAG Laser

High Power Quasi-continuous-wave Solid-state Slab

Research Progress of Directly Pumped Mid-infraredDy∶PbGa₂S₄ Lasers

Evaluation of Beam Quality M² for 976 nm Wide Stripe High Power Semiconductor Laser

Related Author

Xiao-yu MA

Su-ping LIU

Cui-luan WANG

Xue-feng BAN

PENG Qinjun

WU Jianhong

DU Shifeng

GAO Yun

Related Institution

School of Materials Science and Optoelectronics， University of Chinese Academy of Sciences

National Engineering Research Center for Optoelectronic devices， Institute of Semiconductors Chinese Academy of Sciences

Institute of Optical Physics and Engineering Technology， Qilu Zhongke

University of Chinese Academy of Sciences

Key Laboratory of Function Crystal and Laser Technology， Technical Institute of Physics and Chemistry， Chinese Academy of Sciences

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰