Status and Perspectives of Deep Ultraviolet LED Packaging Technology

Yang PENG; Ming-xiang CHEN; Xiao-bing LUO

doi:10.37188/CJL.20200394

您当前的位置：

首页 >

文章列表页 >

Status and Perspectives of Deep Ultraviolet LED Packaging Technology

Luminescence Industry and Technology Frontier | 更新时间：2021-04-23

- Status and Perspectives of Deep Ultraviolet LED Packaging Technology
- Chinese Journal of Luminescence Vol. 42, Issue 4, Pages: 542-559(2021)
- 作者机构：
  
  1.华中科技大学航空航天学院，湖北　武汉　 430074
  2.华中科技大学机械科学与工程学院，湖北　武汉　 430074
  3.华中科技大学能源与动力工程学院，湖北　武汉　 430074
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(2016YFB0400804);National Key Research and Development Program of China(51805196;51775219)
- DOI：10.37188/CJL.20200394
  CLC： TN312.8
- Published：01 April 2021，
  
  Received：21 December 2020，
  
  Revised：08 January 2021，
扫描看全文
Yang PENG, Ming-xiang CHEN, Xiao-bing LUO. Status and Perspectives of Deep Ultraviolet LED Packaging Technology. [J]. Chinese Journal of Luminescence 42(4):542-559(2021)
DOI：

Yang PENG, Ming-xiang CHEN, Xiao-bing LUO. Status and Perspectives of Deep Ultraviolet LED Packaging Technology. [J]. Chinese Journal of Luminescence 42(4):542-559(2021) DOI： 10.37188/CJL.20200394.

摘要

深紫外发光二极管(Deep-ultraviolet light-emitting diode

DUV-LED)具有环保无汞、寿命长、功耗低、响应快、结构轻巧等诸多优势，在杀菌消毒、生化检测、医疗健康、隐秘通讯等领域具有重要应用价值。近年来，深紫外LED技术取得了快速发展，主要体现在光效和可靠性的不断提高，这一方面得益于芯片制造过程中氮化物材料外延和掺杂技术的进步，另一方面归功于深紫外LED封装技术的发展。但是，与波长较长的近紫外和蓝光LED相比，深紫外LED的光效和可靠性仍有很大提升空间。本综述重点对深紫外LED封装关键技术进行了系统分析，包括封装材料选择、封装结构设计、封装工艺优化、反射光损耗机制以及结温和热管理等，同时从提高光效与器件可靠性角度阐述了深紫外LED封装的最新研究进展，并对后续技术发展进行了展望。

Abstract

Deep ultraviolet light-emitting diode(DUV-LED) has great applications in sterilization and disinfection

biochemical detection

medical treatment

and secret communication due to its mercury-free

long life

low power consumption

high response

and compact structure. In recent years

the light efficiency and reliability of DUV-LEDs are continuously enhanced. It is attributed to the advancement of nitride material epitaxy and doping technology in chip fabrication process and the development of DUV-LED packaging technology. However

the light efficiency and reliability of DUV-LED need to enhance compared with near-ultraviolet (NUV) and blue LEDs. This review focuses on the systematic analysis of the key technologies of DUV-LED packaging

including packaging material selection

packaging structure design

packaging process optimization

reflected light loss mechanism

and junction temperature and thermal management. Meanwhile

the latest research progresses of DUV-LED packaging in light extraction efficiency and device reliability are introduced. The future technology development of DUV-LED is prospected.

关键词

深紫外LED封装技术光效可靠性

Keywords

DUV-LEDpackaging technologylight efficiencyreliability

references

SCHUBERT E F, KIM J K. Solid-state light sources getting smart [J].Science, 2005, 308(5726):1274-1278.

LUO X B, HU R, LIU S, et al. Heat and fluid flow in high-power LED packaging and applications [J].Prog. Energy Combust. Sci., 2016, 56:1-32.

CHO J, PARK J H, KIM J K, et al. White light-emitting diodes:history, progress, and future [J].Laser Photonics Rev., 2017, 11(2):1600147-1-17.

PENG Y, LI R X, CHENG H, et al. Facile preparation of patterned phosphor-in-glass with excellent luminous properties through screen-printing for high-power white light-emitting diodes [J].J. Alloys Compd., 2017, 693:279-284.

KNEISSL M, KOLBE T, CHUA C, et al. Advances in group Ⅲ-nitride-based deep UV light-emitting diode technology [J].Semicond. Sci. Technol., 2011, 26(1):014036-1-6.

HIRAYAMA H, MAEDA N, FUJIKAWA S, et al. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes [J].Jpn. J. Appl. Phys., 2014, 53(10):100209-1-10.

KHAN A, BALAKRISHNAN K, KATONA T. Ultraviolet light-emitting diodes based on group three nitrides [J].Nat. Photonics, 2008, 2(2):77-84.

FUJIOKA A, ASADA K, YAMADA H, et al. High-output-power 255/280/310 nm deep ultraviolet light-emitting diodes and their lifetime characteristics [J].Semicond. Sci. Technol., 2014, 29(8):084005-1-5.

林岳，陈华山，陈灿和，等. 深紫外发光二极管研究进展及其在杀菌消毒中的应用 [J].厦门大学学报(自然科学版)，2020，59(3):360-372.

LIN Y, CHEN H S, CHEN C H, et al. Progress in the deep-ultraviolet light-emitting diode and its application on sterilization and disinfection [J].J. Xiamen Univ. (Nat. Sci.), 2020, 59(3):360-372. (in Chinese)

SMITH A. SETi's violeds technology proves 99.9 sterilization of coronavirus(COVID-19) in 30 seconds [EB/OL]. (2020-04-02). http://www.s-et.com/en/company/press/press-release/http://www.s-et.com/en/company/press/press-release/.

MURAMOTO Y, KIMURA M, NOUDA S. Development and future of ultraviolet light-emitting diodes:UV-LED will replace the UV lamp [J].Semicond. Sci. Technol., 2014, 29(8):084004-1-8.

王佳乐. 深紫外LED的前景及市场应用价值探究 [J].现代信息科技, 2019, 3(8):49-50.

WANG J L. Research on the prospect and market application value of deep ultraviolet LED [J].Mod. Inf. Technol., 2019, 3(8):49-50. (in Chinese)

Yole Développement. UV LEDs-technology, Manufacturing and Application Trends[R].Lyon:Yole Développement, 2016.

SHATALOV M, SUN W H, JAIN R, et al. High power AlGaN ultraviolet light emitters [J].Semicond. Sci. Technol., 2014, 29(8):084007-1-6.

王军喜，闫建昌，郭亚楠，等. 氮化物深紫外LED研究新进展 [J].中国科学:物理学力学天文学，2015，45(6):067303-1-10.

WANG J X, YAN J C, GUO Y N, et al. Recent progress of research on III-nitride deep ultraviolet light-emitting diode [J].Sci. Sinica Phys. Mech. Astron., 2015, 45(6):067303-1-10. (in Chinese)

SUN H D, MITRA S, SUBEDI R C, et al. Unambiguously enhanced ultraviolet luminescence of AlGaN wavy quantum well structures grown on large misoriented sapphire substrate [J].Adv. Funct. Mater., 2019, 29(48):1905445-1-8.

SUN H D, PRIANTE D, MIN J W, et al. Graded-index separate confinement heterostructure AlGaN nanowires:toward ultraviolet laser diodes implementation [J].ACS Photonics, 2018, 5(8):3305-3314.

YU H B, CHEN Q, REN Z J, et al. Enhanced performance of an AlGaN-based deep-ultraviolet LED having graded quantum well structure [J].IEEE Photonics J., 2019, 11(4):8201006.

REN Z J, YU H B, LIU Z L, et al. Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes:a review [J].J. Phys. D Appl. Phys., 2020, 53(7):073002.

KNEISSL M, SEONG T Y, HAN J, et al. The emergence and prospects of deep-ultraviolet light-emitting diode technologies [J].Nat. Photonics, 2019, 13(4):233-244.

BAE J Y, KIM Y H, KIM H Y, et al. Ultraviolet light stable and transparent sol-gel methyl siloxane hybrid material for UV light-emitting diode (UV LED) encapsulant [J].ACS Appl. Mater. Interfaces, 2015, 7(2):1035-1039.

LUO X B, FU X, CHEN F, et al. Phosphor self-heating in phosphor converted light emitting diode packaging [J].Int. J. Heat Mass Transf., 2013, 58(1-2):276-281.

YAMADA K, FURUSAWA Y, NAGAI S, et al. Development of underfilling and encapsulation for deep-ultraviolet LEDs [J].Appl. Phys. Express, 2015, 8(1):012101-1-3.

HUANG S Y, WANG J S. Thermally stable conformal encapsulation material for high-power ultraviolet light-emitting diodes [J].Opt. Eng., 2017, 56(7):077105.

NAGASAWA Y, HIRANO A. Review of encapsulation materials for AlGaN-based deep-ultraviolet light-emitting diodes [J].Photonics Res., 2019, 7(8):B55-B65.

NAGAI S, YAMADA K, HIRANO A, et al. Development of highly durable deep-ultraviolet AlGaN-based LED multichip array with hemispherical encapsulated structures using a selected resin through a detailed feasibility study [J].Jpn. J. Appl. Phys., 2016, 55(8):082101-1-7.

YANG S, KWAK S Y, JIN J, et al. Thermally resistant UV-curable epoxy-siloxane hybrid materials for light emitting diode (LED) encapsulation [J].J. Mater. Chem., 2012, 22(18):8874-8880.

KIM J S, YANG S, BAE B S. Thermally stable transparent sol-gel based siloxane hybrid material with high refractive index for light emitting diode (LED) encapsulation [J].Chem. Mater., 2010, 22(11):3549-3555.

LEE S, HONG J Y, JANG J. Multifunctional graphene sheets embedded in silicone encapsulant for superior performance of light-emitting diodes [J].ACS Nano, 2013, 7(7):5784-5790.

LU C C, WANG C P, LIU C Y, et al. The efficiency and reliability improvement by utilizing quartz airtight packaging of UVC LEDs [J].IEEE Trans. Electron Devices, 2016, 63(8):3143-3146.

程浩，陈明祥，郝自亮，等. 功率电子封装用陶瓷基板技术与应用进展 [J].电子元件与材料，2016，35(1):7-11.

CHENG H, CHEN M X, HAO Z L, et al. Progress of technologies and applications of ceramic substrate for the packaging of power electronics [J].Electron. Comp. Mater., 2016, 35(1):7-11. (in Chinese)

程浩，陈明祥，罗小兵，等. 电子封装陶瓷基板 [J].现代技术陶瓷，2019，40(4):265-292.

CHENG H, CHEN M X, LUO X B, et al. Ceramic substrate for electronic packaging [J].Adv. Ceram., 2019, 40(4):265-292. (in Chinese)

HE H, FU R L, WANG D L, et al. A new method for preparation of direct bonding copper substrate on Al2O3 [J].Mater. Lett., 2007, 61(19-20):4131-4133.

YU C J, BUTTAY C, LABOURÉ É. Thermal management and electromagnetic analysis for GaN devices packaging on DBC substrate [J].IEEE Trans. Power Electron., 2017, 32(2):906-910.

CHEN Z, PENG Y, CHENG H, et al. Void-free and high-speed filling of through ceramic holes by copper electroplating [J].Microelectron. Reliab., 2017, 75:171-177.

HUANG D, LIU Z, HARRIS J, et al. High thermal conductive AlN substrate for heat dissipation in high-power LEDs [J].Ceram. Int., 2019, 45(1):1412-1415.

梁仁瓅. AlInGaN基紫外LED封装技术研究 [D].武汉:华中科技大学, 2019.

LIANG R L. Research on AlInGaN Based Ultraviolet Light-emitting Diode Packaging Technology [D].Wuhan:Huazhong University of Science and Technology, 2019. (in Chinese)

柳星星. 深紫外LED封装技术及其应用研究 [D].武汉:华中科技大学, 2019.

LIU X X. Research on Deep Ultraviolet Light-emitting Diode Packaging and Its Applications [D].Wuhan:Huazhong University of Science and Technology, 2019. (in Chinese)

FAN Z Y, JIANG H X, LIN J Y. Encapsulation and packaging of ultraviolet and deep-ultraviolet light emitting diodes:US, US2006138443A1 [P].2006-06-29.

彭洋. 高光效高可靠紫外LED封装技术及其应用研究 [D].武汉:华中科技大学, 2017.

PENG Y. Research on High Light Efficiency and Reliability of Ultraviolet Light-emitting Diode Packaging and Its Application [D].Wuhan:Huazhong University of Science and Technology, 2017. (in Chinese)

阳升应用材料股份有限公司. 具有网版印刷环绕壁的LED装置:中国，CN204102938U [P].2015-01-14.

Cheering Sun Applied Materials Co. Ltd.. LED device with screen-printing encircling wall:CN, CN204102938U [P].2015-01-14. (in Chinese)

东莞市凯昶德电子科技股份有限公司. 一种带镀铜围坝的陶瓷封装基板制备方法:中国，CN106783755A [P].2017-05-31.

Dongguan Kechenda Electronics Technology Co. Ltd. Ceramic package substrate preparation method with copper plating box dam:CN, CN106783755A [P].2017-05-31. (in Chinese)

YANG Z Z, SUN Q L, CHENG H, et al. Preparation of three-dimensional ceramic substrate by multiple electroforming for UV-LED hermetic packaging [J].Ceram. Int., 2019, 45(17):22022-22028.

SUN Q L, YANG Z Z, CHENG H, et al. Creation of three-dimensional structures by direct ink writing with kaolin suspensions [J].J. Mater. Chem. C, 2018, 6(42):11392-11400.

CHENG H, PENG Y, MOU Y, et al. Low-temperature fabrication of three-dimensional ceramic substrate by molding inorganic aluminosilicate paste [J].J. Electron. Packag., 2019, 141(4):041003-1-7.

SUN Q L, LIU J L, CHENG H, et al. Fabrication of 3D structures via direct ink writing of kaolin/graphene oxide composite suspensions at ambient temperature [J].Ceram. Int., 2019, 45(15):18972-18979.

SUN Q L, PENG Y, CHENG H, et al. Direct ink writing of 3D cavities for direct plated copper ceramic substrates with kaolin suspensions [J].Ceram. Int., 2019, 45(9):12535-12543.

CHOI K S, LEE H, BAE H C, et al. Interconnection technology based on InSn solder for flexible display applications [J].ETRI J., 2015, 37(2):387-394.

CHEN M X, YUAN L L, LIU S. Research on low-temperature anodic bonding using induction heating [J].Sensors Actuators A Phys., 2007, 133(1):266-269.

PENG P, HU A M, GERLICH A P, et al. Joining of silver nanomaterials at low temperatures:processes, properties, and applications [J].ACS Appl. Mater. Interfaces, 2015, 7(23):12597-12618.

MOU Y, PENG Y, ZHANG Y R, et al. Cu-Cu bonding enhancement at low temperature by using carboxylic acid surface-modified Cu nanoparticles [J].Mater. Lett., 2018, 227:179-183.

MOU Y, CHENG H, PENG Y, et al. Fabrication of reliable Cu-Cu joints by low temperature bonding isopropanol stabilized Cu nanoparticles in air [J].Mater. Lett., 2018, 229:353-356.

LIU J X, MOU Y, PENG Y, et al. Novel Cu-Ag composite nanoparticle paste for low temperature bonding [J].Mater. Lett., 2019, 248:78-81.

LIN L. MEMS post-packaging by localized heating and bonding [J].IEEE Trans. Adv. Packag., 2000, 23(4):608-616.

中山大学. 一种紫外LED封装结构及其晶圆级封装方法:中国，CN102194973A [P].2011-09-21.

Sun Yat-Sen University. Ultraviolet LED packaging structure and wafer-grade packaging method thereof:CN, CN102194973A [P].2011-09-21. (in Chinese)

广州市鸿利光电股份有限公司. 一种LED及其封装方法:中国，CN103325923A [P].2013-09-25.

Guangzhou Hongli Optoelectronics Co. Ltd. LED and encapsulating method thereof:CN, CN103325923A [P].2013-09-25. (in Chinese)

PENG Y, WANG S M, CHENG H, et al. Whole inorganic hermetic packaging technology using localized induction heating for deep ultraviolet light-emitting diodes [J].IEEE Trans. Comp., Packag. Manuf. Technol., 2016, 6(9):1456-1461.

KOLBE T, KNAUER A, CHUA C, et al. Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes [J].Appl. Phys. Lett., 2010, 97(17):171105-1-3.

HUANG K, GAO N, WANG C Z, et al. Top- and bottom-emission-enhanced electroluminescence of deep-UV light-emitting diodes induced by localised surface plasmons [J].Sci. Rep., 2014, 4:4380-1-7.

NAM K B, LI J, NAKARMI M L, et al. Unique optical properties of AlGaN alloys and related ultraviolet emitters [J].Appl. Phys. Lett., 2004, 84(25):5264-5266.

CHAN S I, HONG W S, KIM K T, et al. Accelerated life test of high power white light emitting diodes based on package failure mechanisms [J].Microelectron. Reliab., 2011, 51(9-11):1806-1809.

AHN J, KIM D, LEE C R, et al. Junction temperature simulation of multichip module LED package [J].Mater. Res. Innov., 2014, 18(S2):S2-748-S2-752.

WANG S, LONG H L, ZHANG Y, et al. Monolithic integration of deep ultraviolet LED with a multiplicative photoelectric converter [J].Nano Energy, 2019, 66:104181.

HUANG C, ZHANG H C, SUN H D. Ultraviolet optoelectronic devices based on AlGaN-SiC platform:towards monolithic photonics integration system [J].Nano Energy, 2020, 77:105149.

FUJII T, GAO Y, SHARMA R, et al. Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening [J].Appl. Phys. Lett., 2004, 84(6):855-857.

ODER T N, KIM K H, LIN J Y, et al. Ⅲ-nitride blue and ultraviolet photonic crystal light emitting diodes [J].Appl. Phys. Lett., 2004, 84(4):466-468.

LEE Y J, HWANG J M, HSU T C, et al. Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates [J].IEEE Photonics Technol. Lett., 2006, 18(10):1152-1154.

LEE J W, PARK J H, KIM D Y, et al. Arrays of truncated cone AlGaN deep-ultraviolet light-emitting diodes facilitating efficient outcoupling of in-plane emission [J].ACS Photonics, 2016, 3(11):2030-2034.

ICHIKAWA M, FUJIOKA A, KOSUGI T, et al. High-output-power deep ultraviolet light-emitting diode assembly using direct bonding [J].Appl. Phys. Express, 2016, 9(7):072101-1-4.

YAMADA K, NAGASAWA Y, NAGAI S, et al. Study on the main-chain structure of amorphous fluorine resins for encapsulating AlGaN-based DUV-LEDs [J].Phys. Status Solid (B), 2018, 215(10):1700525-1-4.

PENG Y, GUO X, LIANG R L, et al. Enhanced light extraction from DUV-LEDs by AlN-doped fluoropolymer encapsulation [J].IEEE Photonics Technol. Lett., 2017, 29(14):1151-1154.

LIANG R L, DAI J N, XU L L, et al. Interface anchored effect on improving working stability of deep ultraviolet light-emitting diode using graphene oxide-based fluoropolymer encapsulant [J].ACS Appl. Mater. Interfaces, 2018, 10(9):8238-8244.

KHIZAR M, FAN Z Y, KIM K H, et al. Nitride deep-ultraviolet light-emitting diodes with microlens array [J].Appl. Phys. Lett., 2005, 86(17):173504-1-3.

PENG Y, GUO X, LIANG R L, et al. Fabrication of microlens arrays with controlled curvature by micromolding water condensing based porous films for deep ultraviolet LEDs [J].ACS Photonics, 2017, 4(10):2479-2485.

LIANG R L, DAI J N, XU L L, et al. High light extraction efficiency of deep ultraviolet LEDs enhanced using nanolens arrays [J].IEEE Trans. Electron Devices, 2018, 65(6):2498-2503.

YAN X, SHATALOV M, SAXENA T, et al. Deep-ultraviolet tailored- and low-refractive index antireflection coatings for light-extraction enhancement of light emitting diodes [J].J. Appl. Phys., 2013, 113(16):163105-1-6.

GUO Y N, ZHANG Y, YAN J C, et al. Light extraction enhancement of AlGaN-based ultraviolet light-emitting diodes by substrate sidewall roughening [J].Appl. Phys. Lett., 2017, 111(1):011102-1-5.

LIANG R L, HU R, LONG H L, et al. Bio-inspired flexible fluoropolymer film for all-mode light extraction enhancement [J].ACS Appl. Mater. Interfaces, 2019, 11(21):19623-19630.

RAUT H K, GANESH V A, NAIR A S, et al. Anti-reflective coatings:a critical, in-depth review [J].Energy Environ. Sci., 2011, 4(10):3779-3804.

KADAKIA N, NACZAS S, BAKHRU H, et al. Fabrication of surface textures by ion implantation for antireflection of silicon crystals [J].Appl. Phys. Lett., 2010, 97(19):191912-1-3.

CAI J G, QI L M. Recent advances in antireflective surfaces based on nanostructure arrays [J].Mater. Horiz., 2015, 2(1):37-53.

KANG G M, YOO J, AHN J, et al. Transparent dielectric nanostructures for efficient light management in optoelectronic applications [J].Nano Today, 2015, 10(1):22-47.

PENG Y, WANG S M, CHENG H, et al. Light efficiency enhancement of deep ultraviolet light-emitting diodes packaged by nanostructured silica glass [J].J. Disp. Technol., 2016, 12(10):1106-1111.

PENG Y, LIANG R L, MOU Y, et al. Progress and perspective of near-ultraviolet and deep-ultraviolet light-emitting diode packaging technologies [J].J. Electron. Packag., 2019, 141(4):040804-1-11.

HANSEN U, MAUS S, GYENGE O, et al. Hermetic SMD-type reflector cavity packaging for DUV LEDs [C].Proceedings of SPIE 11302, Light-emitting Devices, Materials, and Applications ⅩⅩⅣ, San Francisco, 2020:113021F.

杨宇铭，李燕，郑怀文，等. 用于AlGaN基DUV LED封装的高反射镀铝DPC陶瓷基板 [J].液晶与显示，2020，35(10):991-999.

YANG Y M, LI Y, ZHENG H W, et al. High-reflection Al-plated DPC ceramic substrate for AlGaN-based DUV LED packaging [J].Chin. J. Liq. Cryst. Disp., 2020, 35(10):991-999. (in Chinese)

CHIBA H, SUZUKI Y, YASUDA Y, et al. Development of silicon wafer packaging technology for deep UV LED [J].Electr. Eng. Jpn., 2020:1-7.

LIU X X, MOU Y, WANG H, et al. Enhanced light extraction of deep ultraviolet light-emitting diodes by using optimized aluminum reflector [J].Appl. Opt., 2018, 57(25):7325-7328.

PAI Y M, LIN C H, LEE C F, et al. Enhancing the light-extraction efficiency of AlGaN-based deep-ultraviolet light-emitting diodes by optimizing the diameter and tilt of the aluminum sidewall [J].Crystals, 2018, 8(11):420.

LIANG R, ZHANG J, WANG S, et al. Investigation on thermal characterization of eutectic flip-chip UV-LEDs with different bonding voidage [J].IEEE Trans. Electron Devices, 2017, 64(3):1174-1179.

LIANG R L, ZHANG J, WANG S, et al. Experimental study on the effects of eutectic voids on the thermal performance within flip-chip ultraviolet light-emitting diodes [J].IEEE Trans. Comp., Packag. Manuf. Technol., 2016, 6(10):1488-1492.

XU L L, LIANG R L, DAI J N, et al. Reduction of structural thermal resistance for deep ultraviolet light-emitting diodes fabricated on AlN ceramic substrate via copper-filled thermal holes [J].IEEE Trans. Comp., Packag. Manuf. Technol., 2018, 8(12):2107-2112.

ZHANG W H, LIN W K, YEH C T, et al. A novel liquid-packaging technology for highly reliable UV-LED encapsulation [J].Heat Transf. Res., 2019, 50(4):349-360.

KANG C Y, LIN C H, WU T, et al. A novel liquid packaging structure of deep-ultraviolet light-emitting diodes to enhance the light-extraction efficiency [J].Crystals, 2019, 9(4):203.

LAM S C, GUPTA V, HADDAD P R, et al. 3D printed liquid cooling interface for a deep-UV-LED-based flow-through absorbance detector [J].Anal. Chem., 2019, 91(14):8795-8800.

FREDES P, RAFF U, CUENCA J, et al. Improving the optical performance and life time of deep UV LEDs by thermoelectric control [C].Solid-State Lighting 2017, Boulder, 2017:STu1C.2.

Views

252

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Semi-inorganic Packaging Technology of DUV-LEDs with High-vapor Tightness

Failure Analysis of Multi-junction Cascade Vertical Cavity Surface Emitting Laser

Effect of Preparation Layer Temperature on Photoelectric Properties and Aging Properties of Yellow Light-emitting Diode

Reliability of Low Color Temperature Phosphor-free LED Light Source

Related Author

Yang PENG

Mingxiang CHEN

XiaoBing LUO

WANG Hong

XIE Zijing

LAN Yian

XIAO Guowei

ZENG Zhaoming

Related Institution

School of Energy and Power Engineering， Huazhong University of Science and Technology

School of Mechanical Science and Engineering， Huazhong University of Science and Technology

School of Aerospace Engineering， Huazhong University of Science and Technology

Zhongshan Institute of Modern Industrial Technology, South China University of Technology

APt Electronics Co. Ltd.

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰