XU WANG, HAI-ZHU WANG, BIN ZHANG, et al. Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology. [J]. Chinese journal of luminescence, 2021, 42(4): 448-454.
DOI:
XU WANG, HAI-ZHU WANG, BIN ZHANG, et al. Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology. [J]. Chinese journal of luminescence, 2021, 42(4): 448-454. DOI: 10.37188/CJL.20200379.
Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology
The large mismatched InGaAs multiple quantum wells on GaAs substrates were prepared by metal-organic chemical vapor deposition(MOCVD) technology. In order to solve the large lattice mismatch between InGaAs and GaAs
the GaAsP strain compensation layer structure was designed. And our systematically theoretical and experimental studies were performed upon the composition adjustment of P in the GaAsP materials. The three-periods In
x
Ga
1-
x
As/GaAs
1-
y
P
y
multi-quantum wells structures with the P component of 0
0.128
0.184
and 0.257 were prepared. Compared with PL
XRD
AFM testing results of the samples with and without GaAsP layer
it is found that tensile strain compensation of higher barrier GaAsP material could improve the crystal quality. When the content of P was 0.184
the PL wavelength of InGaAs/GaAsP MWQs was 1 043.6 nm
the FWHM was 29.9 nm. The XRD peaks had multi-level satellite peaks
and the FWHM of the satellite peaks was small. The AFM roughness was 0.130 nm
and the surface morphology showed a step flow growth mode.
关键词
金属有机化学气相沉积InGaAs/GaAsP应变补偿多量子阱晶格失配
Keywords
metal-organic chemical vapour deposition(MOCVD)InGaAs/GaAsPstrain compensationmultiple quantum wellslattice mismatch
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