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Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology
Synthesis and Properties of Materials | 更新时间:2021-04-23
    • Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology

    • Chinese Journal of Luminescence   Vol. 42, Issue 4, Pages: 448-454(2021)
    • DOI:10.37188/CJL.20200379    

      CLC: TN304.2
    • Published:01 April 2021

      Received:12 December 2020

      Revised:04 January 2021

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  • XU WANG, HAI-ZHU WANG, BIN ZHANG, et al. Growth of InGaAs/GaAsP Strain-compensated Multiple Quantum Wells via MOCVD Technology. [J]. Chinese journal of luminescence, 2021, 42(4): 448-454. DOI: 10.37188/CJL.20200379.

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Xu WANG
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