Optoelectronic Performance of 2D WSe<sub>2</sub> Field Effect Transistor

Feng-liang XIA; Kai-xi SHI; Dong-xu ZHAO; Yun-peng WANG; Yi FAN; Jin-hua LI

doi:10.37188/CJL.20200374

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Optoelectronic Performance of 2D WSe₂ Field Effect Transistor

Device Fabrication and Physics | 更新时间：2021-02-08

- Optoelectronic Performance of 2D WSe₂ Field Effect Transistor
- Chinese Journal of Luminescence Vol. 42, Issue 2, Pages: 257-263(2021)
- 作者机构：
  
  1.长春理工大学理学院, 吉林长春 130022
  2.中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室, 吉林长春 130033
- 作者简介：
- 基金信息：
  
  the "111" Project of China;Developing Project of Science and Technology of Jilin Province;Developing Project of Science and Technology of Jilin Province;Developing Project of Science and Technology of Jilin Province
- DOI：10.37188/CJL.20200374
  CLC： TN386
- Published：2021-02，
  
  Received：07 December 2020，
  
  Accepted：2021-1-4
- 稿件说明：
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FENG-LIANG XIA, KAI-XI SHI, DONG-XU ZHAO, et al. Optoelectronic Performance of 2D WSe₂ Field Effect Transistor. [J]. Chinese journal of luminescence, 2021, 42(2): 257-263.
DOI：

FENG-LIANG XIA, KAI-XI SHI, DONG-XU ZHAO, et al. Optoelectronic Performance of 2D WSe₂ Field Effect Transistor. [J]. Chinese journal of luminescence, 2021, 42(2): 257-263. DOI： 10.37188/CJL.20200374.

摘要

自石墨烯被发现以来，随着人们不断的研究和探索，越来越多具有类似结构的二维材料因其优异的光电性质相继被发现和研究。过渡金属硫族化合物（TMDs）因其丰富的物理性质而受到广泛关注。本文研究了三层二硒化钨（WSe

）纳米片的光电性能。利用范德华力将WSe

转移到SiO

/Si衬底的Au电极上，用银浆引出背栅电极，制备了WSe

场效应晶体管，其载流子迁移率为3.42 cm

/（V·s）。WSe

场效应晶体管在630 nm波长下探测器响应度为0.61 A/W，器件的光响应恢复时间为1 900 ms。

Abstract

Since the graphene was found

with the continuous research and exploration by people

more and more two-dimensional materials with similar structures have been discovered and studied successively due to their excellent photoelectrical properties. The widespread attention is paid to the transition metal dichaldogenides(TMDs) due to their rich physical properties. This paper researches the two-dimensional three-layer WSe

photoelectric property

and transfers it to the Au electrode of SiO

/Si substrate by Van Der Waals force. Finally

the silver paste is used to extract the back gate electrode with WSe

field effect transistor manufactured

whose carrier mobility is 3.42 cm

/(V·s). The detector response ratio of the WSe

field effect transistor based on the 630 nm wavelength is 0.61 A/W and the light response recovery time is 1 900 ms.

关键词

二维半导体材料过渡金属硫族化物二硒化钨光电探测

Keywords

two-dimensional semiconductor materialstransition metal dichaldogenides(TMDs)WSe2photoelectric detection

references

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Optoelectronic Performance of 2D WSe2 Field Effect Transistor

DOI：10.37188/CJL.20200374

摘要

Abstract

关键词

Keywords

references

Optoelectronic Performance of 2D WSe₂ Field Effect Transistor