Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure

Yuan-hong CAI; Xin GAO; Jing-hui WANG; Zhi-hao WANG; Bao-xue BO

doi:10.37188/CJL.20200365

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Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure

Device Fabrication and Physics | 更新时间：2021-04-23

- Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure
- Chinese Journal of Luminescence Vol. 42, Issue 4, Pages: 518-525(2021)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室，吉林　长春　 130022
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China(61774024);National Key R&D Project(2017YFB0405100);Science and Technology Development Plan of Jilin Province(20190302007GX)
- DOI：10.37188/CJL.20200365
  CLC： TN248.4
- Published：01 April 2021，
  
  Received：30 November 2020，
  
  Revised：23 December 2020，
- 稿件说明：
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YUAN-HONG CAI, XIN GAO, JING-HUI WANG, et al. Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure. [J]. Chinese journal of luminescence, 2021, 42(4): 518-525.
DOI：

YUAN-HONG CAI, XIN GAO, JING-HUI WANG, et al. Output Characteristics of Broad-area Stripe Semiconductor Lasers with Microthermal Channel Anode Structure. [J]. Chinese journal of luminescence, 2021, 42(4): 518-525. DOI： 10.37188/CJL.20200365.

摘要

为了抑制宽条形半导体激光器的热透镜效应，提高慢轴光束质量，本文提出并制作了一种微热通道电极结构激光器。该芯片p面注入区电极处被设计为较厚的高热导率的电极结构，封装后激光器两侧与热沉之间形成空气间隙，抑制激光器有源区横向热流，使激光器内温度分布均匀，有效地降低慢轴发散角。对该激光器的封装模型进行了稳态热分析，优化了微热通道电极结构的厚度和宽度，并制作了波长为940 nm的微热通道电极结构激光器。测试结果表明，在注入电流为2 A时，微热通道电极结构激光器的发散角相对于普通电极结构激光器降低了24%，有效地降低了激光器慢轴光束发散角。

Abstract

In order to suppress the thermal lens effect of broad-area stripe semiconductor lasers

and thus improve the slow-axis beam quality of semiconductor lasers

a laser with microthermal channels anode structure is proposed and fabricated. The injection region electrode on the p-side of laser is designed as a thick electrode structure of high thermal conductivity. After packaging

an air gap is formed between the p-side of laser and the top side of AlN heat sink to suppress the transverse heat flow in the current injection region

so that the temperature distribution of the emission region is uniform and the slow-axis divergence angle is effectively reduced. The thickness and width of microthermal channels anode structure are optimized by steady-state thermal analysis of the laser packaging model. A 940 nm micro thermal channel anode structure laser is fabricated. The measurement results show that the divergence angle of the microthermal channels anode structure laser at 2 A is 24%

lower than that of the normal anode structure laser

which effectively reduces the laser slow-axis beam divergence angle.

关键词

宽条形半导体激光器热透镜微热通道电极结构慢轴发散角

Keywords

wide stripe semiconductor laserthermal lensmicrothermal channel anode structureslow-axis divergence angle

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Related Institution

State Key Laboratory of High-power Semiconductor Laser， Changchun University of Science and Technology

State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology

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