InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation

Yi TAN; Wing-cheung CHONG; Zi-yuan LU; Xiao-dong ZHANG; De-sheng ZHAO; Yong CAI; Zhong-ming ZENG; Bao-shun ZHANG

doi:10.37188/CJL.20200355

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InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation

Device Fabrication and Physics | 更新时间：2021-02-08

- InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation
- Chinese Journal of Luminescence Vol. 42, Issue 2, Pages: 215-222(2021)
- 作者机构：
  
  1.中国科学技术大学纳米技术与纳米仿生学院, 安徽合肥 230026
  2.中国科学院苏州纳米技术与纳米仿生研究所多功能材料与轻巧系统重点实验室, 江苏苏州 215123
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;Natural Science Foundation of Jiangsu Province;Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute
- DOI：10.37188/CJL.20200355
  CLC： TN312.8
- Published：2021-2，
  
  Received：23 November 2020，
  
  Accepted：14 December 2020
扫描看全文
Yi TAN, Wing-cheung CHONG, Zi-yuan LU, et al. InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation. [J]. Chinese Journal of Luminescence 42(2):215-222(2021)
DOI：

Yi TAN, Wing-cheung CHONG, Zi-yuan LU, et al. InGaN-based Lateral-structured Micro-LED Array Fabricated by Ion Implantation. [J]. Chinese Journal of Luminescence 42(2):215-222(2021) DOI： 10.37188/CJL.20200355.

摘要

采用离子注入工艺在InGaN/GaN量子阱蓝光LED结构的p-GaN层形成高阻态隔离区域，实现了最小4 μm超小尺寸高光效Micro-LED阵列的制备，并系统研究了氟离子注入隔离工艺制备的横向结构Micro-LED阵列的电学和光学性能。实验结果表明，在采用的离子注入能量范围内，氟离子在p-GaN层中的注入深度越深，对应器件的电学和光学隔离效果越好。当离子注入能量为60 keV时，Micro-LED阵列具有相对最佳的光电效果，同时基于该离子注入能量制备的4 μm超小尺寸Micro-LED阵列的光功率密度高达200 W/cm

，展现了离子注入工艺在新一代Micro-LED微显示芯片中的应用潜力。

Abstract

In this paper

an ion implantation process is used to form a high-resistance isolation region on the p-GaN layer of the InGaN/GaN quantum well blue LED structure. This method has been used to realize the preparation of ultra-small size and high luminous efficiency Micro-LED arrays with a minimum size of 4 μm. The electrical and optical properties of lateral structure Micro-LED arrays prepared by fluoride ion implantation isolation process are systematically studied. Experimental results show that higher fluoride ion implantation energy can improve opticlal and electrical isolation between Miro-LEDs. When the ion implantation energy is 60 keV

the Micro-LED array has the relatively best photoelectric effect. And the 4 μm ultra-small size Micro-LED array prepared based on this ion implantation energy has an optical power density of up to 200 W/cm

demonstrating the application potential of ion implantation technology in a new generation of Micro-LED based micro-display chips.

关键词

蓝光Micro-LED离子注入隔离氮化镓横向结构高光功率密度

Keywords

blue micro-LEDion implantation isolationGaNlateral structurehigh optical power density

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