High Performance Photomultiplication-type Organic Photodetectors Based on Small-molecule Semiconductor IEICO

Jian-bin WANG; Xiao-sheng TANG; Bi ZHOU; Xia-hui ZENG; Hua-liang YU; Ying-wu ZHOU

doi:10.37188/CJL.20200349

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High Performance Photomultiplication-type Organic Photodetectors Based on Small-molecule Semiconductor IEICO

Device Fabrication and Physics | 更新时间：2021-02-08

- High Performance Photomultiplication-type Organic Photodetectors Based on Small-molecule Semiconductor IEICO
- Chinese Journal of Luminescence Vol. 42, Issue 2, Pages: 241-249(2021)
- 作者机构：
  
  1.闽江学院物理与电子信息工程学院, 福建福州 350108
  2.重庆大学光电工程学院, 重庆 400044
- 作者简介：
- 基金信息：
  
  Fujian Natural Science Foundation Project;Education Project of Fujian Provincial Department
- DOI：10.37188/CJL.20200349
  CLC： O472.8;TN304
- Published：2021-02，
  
  Received：13 November 2020，
  
  Accepted：2020-12-5
- 稿件说明：
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JIAN-BIN WANG, XIAO-SHENG TANG, BI ZHOU, et al. High Performance Photomultiplication-type Organic Photodetectors Based on Small-molecule Semiconductor IEICO. [J]. Chinese journal of luminescence, 2021, 42(2): 241-249.
DOI：

JIAN-BIN WANG, XIAO-SHENG TANG, BI ZHOU, et al. High Performance Photomultiplication-type Organic Photodetectors Based on Small-molecule Semiconductor IEICO. [J]. Chinese journal of luminescence, 2021, 42(2): 241-249. DOI： 10.37188/CJL.20200349.

摘要

采用溶液法制备了结构为ITO/ZnO/P3HT：IEICO/Al和ITO/PEDOT：PSS/P3HT：IEICO/Al的倍增型有机光电探测器，活性层中电子给体（P3HT）和电子受体（IEICO）的质量比为100：1。以氧化锌（ZnO）为界面层的器件在正向与反向偏压下都能良好工作，而以PEDOT：PSS为界面层的器件只能在反向偏压下工作。-15 V偏压下，与PEDOT：PSS界面层器件相比，ZnO界面层器件的暗电流密度（2.2 μA/cm

）降低4倍以上，1.5 mW/cm

光照下的光电流密度（3.7 mA/cm

）提高3倍以上，外量子效率（External quantum efficiency，EQE）平均值（3262%）、响应度平均值（13.3 A/W）和探测灵敏度平均值（1.6×10

Jones）分别提高4倍、4倍和11倍以上。这些结果表明，以ZnO为倍增型有机光电探测器的界面层，可以降低器件的暗电流密度并提高器件的EQEs，从而显著提高器件的光电性能。

Abstract

The photomultiplication(PM)-type organic photodetectors(OPDs) with the structures of ITO/ZnO/P3HT:IEICO/Al and ITO/PEDOT:PSS/P3HT:IEICO/Al are fabricated by solution-processing method

respectively. In the active layers

the weight ratio of electron donor and acceptor is 100:1. The OPDs based on a ZnO interfacial layer can work well both under forward and reverse bias voltages

while the OPDs based on a PEDOT:PSS interfacial layer can only work under reverse bias voltages. Under -15 V bias

compared with the PEDOT:PSS interfacial layer-based OPDs

the ZnO interlayer-based OPDs exhibit a more than 4 times smaller dark current density(2.2 μA/cm

)

a more than 3 times larger light current density(3.7 mA/cm

) under 1.5 mW/cm

light illumination

and more than 4 times larger average external quantum efficiency(3262%) and responsivity(13.3 A/W) with a more than 11 times larger average detectivity(1.6×10

Jones). These results demonstrate that the ZnO interfacial layer can reduce the dark current density and increase the EQEs of PM-type OPDs significantly

all of which can greatly improve the optoelectronic performance of devices.

关键词

溶液法氧化锌界面层倍增型有机光电探测器

Keywords

solution-processingZnOinterfacial layerphotomultiplication-type organic photodetectors

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