浏览全部资源
扫码关注微信
长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022
Published:2021-02,
Received:12 November 2020,
Accepted:2020-12-7
移动端阅览
LING ZHU, YI-NA HAI, YONG-GANG ZOU, et al. Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser. [J]. Chinese journal of luminescence, 2021, 42(2): 223-230.
LING ZHU, YI-NA HAI, YONG-GANG ZOU, et al. Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser. [J]. Chinese journal of luminescence, 2021, 42(2): 223-230. DOI: 10.37188/CJL.20200346.
水平谐振腔面发射分布反馈(Surface emitting distributed feedback,SE-DFB)半导体激光器因具有更好的光束质量获得了广泛关注。本文设计了波长为940 nm的水平谐振腔面发射分布反馈半导体激光器,分析了光栅的结构参数(形状、周期、占空比、刻蚀深度等)对激光器发光特性(线宽、边模抑制比、功率及斜率效率等)的影响。结合二阶光栅、脊形波导、电极及出光口、解理封装等器件工艺,制备出发光波长为940.3 nm的水平谐振腔面发射半导体激光器,线宽为0.52 nm,连续工作模式下发射功率为890 mW。
Due to the better beam quality
horizontal cavity surface emitting distributed feedback(SE-DFB) semiconductor lasers have received widespread attention. In this paper
a horizontal cavity surface emitting distributed feedback semiconductor laser with a wavelength of 940 nm was designed. This paper analyzed the influence of the structure parameters of the grating(shape
period
duty cycle
etched depth
etc
.) on the optical characteristics of the laser(linewidth
side-mode suppression ratio
power and slope efficiency
etc
.). Combined with the fabrication of second-order grating
ridge-shaped waveguide
electrode and light exiting
as well as cleavage and encapsulation technology
the device with optical wavelength of 940.3 nm is prepared. The line width of the device is 0.52 nm
and the surface emission power is 890 mW under continuous operation mode.
面发射分布反馈(SE-DFB)半导体激光器二阶光栅光栅形貌耦合因子
surface emitting distributed feedback(SE-DFB) semiconductor lasersecond-order gratingsgrating morphologycoupling factor
王立军, 宁永强, 秦莉, 等.大功率半导体激光器研究进展[J].发光学报, 2015, 36(1):1-19.
WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser[J].Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)
LYAKH A, ZORY P, D'sOUZA M, et al.. Substrate-emitting, distributed feedback quantum cascade lasers[J].Appl. Phys. Lett., 2007, 91(18):181116-1-3.
宋跃辉, 周煜东, 汪丽, 等.基于半导体激光器的780 nm高光谱分辨率激光雷达系统设计[J].中国激光, 2019, 46(10):1001006-1-9.
SONG Y H, ZHOU Y D, WANG L, et al.. Design of 780-nm high spectral resolution lidar based on laser diode[J].Chin. J. Lasers, 2019, 46(10):1001006-1-9. (in Chinese)
马骁宇, 王俊, 刘素平, 等.国内大功率半导体激光器研究及应用现状[J].红外与激光工程, 2008, 37(2):189-194.
MA X Y, WANG J, LIU S P, et al.. Present situation of investigations and applications in high power semiconductor lasers[J].Infrar. Laser Eng., 2008, 37(2):189-194. (in Chinese)
SCHUBERT M, RANA F. Analysis of terahertz surface emitting quantum-cascade lasers[J].IEEE J. Quantum Electron., 2006, 42(3):257-265.
MAISONS G, CARRAS M, GARCIA M, et al.. Substrate emitting index coupled quantum cascade lasers using biperiodic top metal grating[J].Appl. Phys. Lett., 2009, 94(15):151104-1-3.
叶淑娟, 秦莉, 戚晓东, 等.二阶光栅分布反馈半导体激光器的出光特性[J].中国激光, 2010, 37(9):2371-2375.
YE S J, QIN L, QI X D, et al.. Emission characteristics of second-order distributed feedback semiconductor lasers[J].Chin. J. Lasers, 2010, 37(9):2371-2375. (in Chinese)
CHEN Y Y, QIN L, JIA P, et al.. High power narrow far-field broad-stripe semiconductor lasers with second-order metal grating feedback[C].Proceedings of SPIE-Semiconductor Lasers and Applications V, Beijing, 2012: 277-298.
SIGLER C, KIRCH J D, EARLES T, et al.. Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes[J].Appl. Phys. Lett., 2014, 104(13):131108-1-5.
LIU Y H, ZHANG J C, JIA Z W, et al.. Top grating, surface-emitting DFB quantum cascade lasers in continuous-wave operation[J].IEEE Photon. Technol. Lett., 2015, 27(17):1829-1832.
仕均秀.宽条型二阶金属光栅分布反馈半导体激光器的研制[D].长春: 中国科学院长春光学精密机械与物理研究所, 2011.
SHI J X. Research and Manufacture of Broad-stripe Second-order Metal Grating Distributed Feedback Semiconductor Lasers [D]. Changchun: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2011. (in Chinese)
叶淑娟.二阶光栅分布反馈半导体激光器的研制[D].长春: 中国科学院长春光学精密机械与物理研究所, 2010.
YE S J. Research and Manufacture of Second-order Grating Distributed Feedback Semiconductor Lasers [D]. Changchun: Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 2010. (in Chinese)
徐正文. 980 nm高功率波长锁定半导体激光器内置光栅的研究[D].长春: 长春理工大学, 2014.
XU Z W. Research on Internal Grating of High Power and Wavelength-locked Semiconductor Laser of 980 nm [D]. Changchun: Changchun University of Science and Technology, 2014. (in Chinese)
GLINSKI J, MAKINO T. Mode selectivity in DFB lasers with a second-order grating[J].Electron. Lett., 1986, 22(12):679-680.
张灿, 马丽, 梁松, 等.光栅形貌分析及矩形光栅的制作研究[C].第十七届全国化合物半导体材料微波器件和光电器件学术会议, 开封, 2012.
ZHANG C, MA L, LIANG S, et al.. The analysis of grating morphology and study for fabrication of rectangular corrugation[C].Proceedings of the 17th National conference on Microwave Devices and Optoelectronic Devices of Compound Semiconductor Materials, Kaifeng, 2012. (in Chinese)
CHO S C, KIM B G, DAGLI N. Ray optics determination of the DFB coupling coefficient for trapezoidal gratings[J].J. Lightw. Technol., 1998, 16(4):715-720.
HAI Y N, MA X H, ZOU Y G, et al.. Research of asymmetric waveguide on surface emitting distributed feedback semiconductor lasers[J].Opt. Commun., 2018, 423:12-16.
0
Views
258
下载量
1
CSCD
Publicity Resources
Related Articles
Related Author
Related Institution