您当前的位置:
首页 >
文章列表页 >
Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser
Device Fabrication and Physics | 更新时间:2021-02-08
    • Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser

    • Chinese Journal of Luminescence   Vol. 42, Issue 2, Pages: 223-230(2021)
    • DOI:10.37188/CJL.20200346    

      CLC: TN248.4
    • Received:12 November 2020

      Accepted:07 December 2020

      Published:2021-02

    移动端阅览

  • Ling ZHU, Yi-na HAI, Yong-gang ZOU, et al. Design and Fabrication of 940 nm Horizontal Cavity Surface Emitting Semiconductor Laser[J]. Chinese Journal of Luminescence, 2021, 42(2): 223-230. DOI: 10.37188/CJL.20200346.

  •  
  •  
icon
试读结束,您可以激活您的VIP账号继续阅读。
去激活 >
icon
试读结束,您可以通过登录账户,到个人中心,购买VIP会员阅读全文。
已是VIP会员?
去登录 >

0

Views

587

下载量

1

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

No data

Related Author

Ling ZHU
Yi-na HAI
Yong-gang ZOU
Jie FAN
Ao WANG

Related Institution

State Key Laboratory of High-power Semiconductor Laser, Changchun University of Science and Technology
0