Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal

Qiang QI; Meng MENG; Dong-zhou DING; Shu-wen ZHAO; Jun-jie SHI; Guo-hao REN

doi:10.37188/CJL.20200331

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Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal

Synthesis and Properties of Materials | 更新时间：2021-01-12

- Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal
- Chinese Journal of Luminescence Vol. 42, Issue 1, Pages: 28-36(2021)
- 作者机构：
  
  1.上海理工大学材料科学与工程学院, 上海 200093
  2.中国科学院上海硅酸盐研究所, 上海 201899
  3.中国科学院大学材料与光电研究中心, 北京 100049
  4.南京航空航天大学航天学院, 江苏南京 210016
  5.中国科学院海西创新研究院, 福建福州 350002
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;Project of "Key Technical Talents of the Chinese Academy of Sciences";Key Project of Science and Technology Innovation of Shanghai Institute of Ceramics of Chinese Academy of Sciences;Independent Deployment Project of Hercynian Research Institute;Shanghai Science and Technology Commission Foundation
- DOI：10.37188/CJL.20200331
  CLC： O782
- Received：02 November 2020，
  
  Accepted：2020-11-23，
  
  Published：2021-01
- 稿件说明：
移动端阅览
Qiang QI, Meng MENG, Dong-zhou DING, et al. Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal[J]. Chinese journal of luminescence, 2021, 42(1): 28-36.
DOI：

Qiang QI, Meng MENG, Dong-zhou DING, et al. Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal[J]. Chinese journal of luminescence, 2021, 42(1): 28-36. DOI： 10.37188/CJL.20200331.

摘要

共掺杂离子是优化晶体闪烁性能的重要手段之一，本文采用提拉法生长了GAGG：Ce和GAGG：Ce，0.1% Mg晶体。通过测试硬度、透过率、X射线激发发射（XEL）谱和符合时间分辨率等方法研究了微量MgO掺杂对GAGG：Ce光学及闪烁性能的影响。GAGG：Ce和GAGG：Ce，Mg的维氏硬度平均值分别为1 430 kg/mm

和1 420.4 kg/mm

，表明Mg

的掺杂几乎没有对GAGG：Ce的硬度产生影响。XEL谱结果表明，共掺杂Mg

后GAGG：Ce晶体的发光峰值波长约为540 nm，但5d

→

5/2

及5d

→

7/2

发射峰红移了12~24 nm，Mg

的引入可能改变了Ce

的5d

激发态向

5/2

和

7/2

跃迁几率分布。通过共掺杂Mg

，发现尽管光产额由5.8×10

lx/MeV（58 000 ph/MeV）降低为4.15×10

lx/MeV（41 500 ph/MeV），但GAGG：Ce，Mg符合时间分辨率得到了显著改善，达146 ps。此外，比较不同尺寸样品的光产额，发现GAGG：Ce，Mg对闪烁发光的自吸收程度小于GAGG：Ce。以上结果表明，微量MgO掺杂是优化GAGG：Ce晶体闪烁性能的有效途径。

Abstract

Ions' co-doping is one of the important means to optimize crystals' scintillation properties. In this work

GAGG:Ce and GAGG:Ce

0.1%Mg crystals were grown by Czochralski method. The effects of trace MgO on the optical and scintillation properties of GAGG:Ce were studied by measuring hardness

transmittance

X-ray excited luminescence(XEL) spectrum and time resolution. The average Vickers hardness of GAGG:Ce and GAGG:Ce

Mg is 1 430 kg/mm

and 1 420.4 kg/mm

respectively

which indicates that Mg

doping has little effect on the hardness of GAGG:Ce. Photoluminescence(PL) and XEL spectra show that the emission peak wavelength of GAGG:Ce and GAGG:Ce

Mg crystals is~540 nm. By Gaussian fitting the XEL spectrum

the emission peaks of 5d

→

5/2

and 5d

→

7/2

of GAGG:Ce

Mg are red-shifted 12~24 nm relative to GAGG:Ce

and the introduction of Mg

may change the transition probability distribution of Ce

from 5d

excited state to

5/2

and

7/2

. The light yields of GAGG:Ce and GAGG:Ce

Mg are 5.8×10

lx/MeV(58 000 ph/MeV) and 4.15×10

lx/MeV(41 500 ph/MeV)

respectively

but the coincidence time resolution of GAGG:Ce

Mg is significantly improved

up to 146 ps. In addition

comparing the light yield of samples of different sizes

the self-absorption degree of GAGG:Ce

Mg for scintillation luminescence is less than that of GAGG:Ce. The above results indicate that trace MgO doping is an effective way to improve the scintillation performance of GAGG:Ce crystals.

关键词

Keywords

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