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1.上海理工大学 材料科学与工程学院, 上海 200093
2.中国科学院 上海硅酸盐研究所, 上海 201899
3.中国科学院大学 材料与光电研究中心, 北京 100049
4.南京航空航天大学 航天学院, 江苏 南京 210016
5.中国科学院 海西创新研究院, 福建 福州 350002
Received:02 November 2020,
Accepted:2020-11-23,
Published:2021-01
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Qiang QI, Meng MENG, Dong-zhou DING, et al. Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal[J]. Chinese journal of luminescence, 2021, 42(1): 28-36.
Qiang QI, Meng MENG, Dong-zhou DING, et al. Effects of Trace MgO Addition on Optical and Scintillation Properties of GAGG:Ce Crystal[J]. Chinese journal of luminescence, 2021, 42(1): 28-36. DOI: 10.37188/CJL.20200331.
共掺杂离子是优化晶体闪烁性能的重要手段之一,本文采用提拉法生长了GAGG:Ce和GAGG:Ce,0.1% Mg晶体。通过测试硬度、透过率、X射线激发发射(XEL)谱和符合时间分辨率等方法研究了微量MgO掺杂对GAGG:Ce光学及闪烁性能的影响。GAGG:Ce和GAGG:Ce,Mg的维氏硬度平均值分别为1 430 kg/mm
2
和1 420.4 kg/mm
2
,表明Mg
2+
的掺杂几乎没有对GAGG:Ce的硬度产生影响。XEL谱结果表明,共掺杂Mg
2+
后GAGG:Ce晶体的发光峰值波长约为540 nm,但5d
1
→
2
F
5/2
及5d
1
→
2
F
7/2
发射峰红移了12~24 nm,Mg
2+
的引入可能改变了Ce
3+
的5d
1
激发态向
2
F
5/2
和
2
F
7/2
跃迁几率分布。通过共掺杂Mg
2+
,发现尽管光产额由5.8×10
8
lx/MeV(58 000 ph/MeV)降低为4.15×10
8
lx/MeV(41 500 ph/MeV),但GAGG:Ce,Mg符合时间分辨率得到了显著改善,达146 ps。此外,比较不同尺寸样品的光产额,发现GAGG:Ce,Mg对闪烁发光的自吸收程度小于GAGG:Ce。以上结果表明,微量MgO掺杂是优化GAGG:Ce晶体闪烁性能的有效途径。
Ions' co-doping is one of the important means to optimize crystals' scintillation properties. In this work
GAGG:Ce and GAGG:Ce
0.1%Mg crystals were grown by Czochralski method. The effects of trace MgO on the optical and scintillation properties of GAGG:Ce were studied by measuring hardness
transmittance
X-ray excited luminescence(XEL) spectrum and time resolution. The average Vickers hardness of GAGG:Ce and GAGG:Ce
Mg is 1 430 kg/mm
2
and 1 420.4 kg/mm
2
respectively
which indicates that Mg
2+
doping has little effect on the hardness of GAGG:Ce. Photoluminescence(PL) and XEL spectra show that the emission peak wavelength of GAGG:Ce and GAGG:Ce
Mg crystals is~540 nm. By Gaussian fitting the XEL spectrum
the emission peaks of 5d
1
→
2
F
5/2
and 5d
1
→
2
F
7/2
of GAGG:Ce
Mg are red-shifted 12~24 nm relative to GAGG:Ce
and the introduction of Mg
2+
may change the transition probability distribution of Ce
3+
from 5d
1
excited state to
2
F
5/2
and
2
F
7/2
. The light yields of GAGG:Ce and GAGG:Ce
Mg are 5.8×10
8
lx/MeV(58 000 ph/MeV) and 4.15×10
8
lx/MeV(41 500 ph/MeV)
respectively
but the coincidence time resolution of GAGG:Ce
Mg is significantly improved
up to 146 ps. In addition
comparing the light yield of samples of different sizes
the self-absorption degree of GAGG:Ce
Mg for scintillation luminescence is less than that of GAGG:Ce. The above results indicate that trace MgO doping is an effective way to improve the scintillation performance of GAGG:Ce crystals.
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