Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices

Sheng-da LIU; Dan FANG; Xuan FANG; Hong-bin ZHAO; Cheng-lin LI; Deng-kui WANG; Dong-bo WANG; Xiao-hua WANG; Xiao-hui MA; Zhi-peng WEI

doi:10.37188/CJL.20200304

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Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices

Synthesis and Properties of Materials | 更新时间：2021-02-08

- Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices
- Chinese Journal of Luminescence Vol. 42, Issue 2, Pages: 165-186(2021)
- 作者机构：
  
  1.长春理工大学理学院高功率半导体激光国家重点实验室, 吉林长春 130022
  2.香港中文大学(深圳) 理工学院, 广东深圳 518172
  3.北京有色金属研究总院智能传感功能材料国家重点实验室, 北京 100088
  4.哈尔滨工业大学材料科学与工程学院, 黑龙江哈尔滨 150001
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;National Natural Science Foundation of China;National Natural Science Foundation of China;National Natural Science Foundation of China;National Natural Science Foundation of China;National Natural Science Foundation of China;the Developing Project of Science and Technology of Jilin Province;Jilin Province Science and Technology Development Plan Item;Jilin Province Science and Technology Development Plan Item;China Postdoctoral Science Foundation;China Postdoctoral Science Foundation;Basic Research project of Shenzhen Science and Technology Planning Project(Free Exploration);Natural Science Foundation of Guangdong Province
- DOI：10.37188/CJL.20200304
  CLC： O482.31
- Published：2021-02，
  
  Received：13 October 2020，
  
  Accepted：2020-12-10
- 稿件说明：
移动端阅览
SHENG-DA LIU, DAN FANG, XUAN FANG, et al. Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices. [J]. Chinese journal of luminescence, 2021, 42(2): 165-186.
DOI：

SHENG-DA LIU, DAN FANG, XUAN FANG, et al. Advances in Epitaxial Growth, Structural and Optical Properties of Antimonide-based Type-Ⅱ Superlattices. [J]. Chinese journal of luminescence, 2021, 42(2): 165-186. DOI： 10.37188/CJL.20200304.

摘要

近年来，锑化物Ⅱ类超晶格材料在外延生长和发光性质等方面的研究取得了巨大的进步，为获得高性能中红外波段光电子器件奠定了重要的基础。然而，由于传统的InAs/GaSb体系超晶格材料中内部本征Ga原子缺陷的存在，使得InAs/GaSb材料的少子寿命过短，严重影响了光电子器件性能的提升，因此设计并生长具有长少子寿命的新材料体系超晶格材料具有重要的研究意义。本文对现阶段锑化物Ⅱ类超晶格材料的各类材料体系进行了总结和分析，着重强调了各类材料体系的外延生长条件、结构及光学特性等方面的研究进展，并对锑化物Ⅱ类超晶格材料今后的发展进行了展望。

Abstract

In recent years

antimonide type-Ⅱ superlattices have a great progress in the epitaxial growth and luminescence property research

which has laid an important foundation for the research of high-performance middle infrared band optoelectronic devices. However

due to the existence of intrinsic Ga atomic defects

the traditional InAs/GaSb system superlattice materials make the minority life of InAs/GaSb materials too short

which seriously affects the performance improvement of optoelectronic devices. Therefore

it is of great significance to design and grow new material system superlattice materials with long minor carrier lifetime. This paper summarizes and analyzes the various materials systems of antimonide type-Ⅱ superlattice materials at present

emphasizes the development of epitaxial growth conditions

structure and optical properties of various material systems

and gives a prospect for the future development of antimonide type-Ⅱ superlattice materials.

关键词

锑化物超晶格分子束外延少子寿命

Keywords

antimonidesuperlatticemolecular beam epitaxyminor carrier lifetime

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Department of Opto-electronic Information Science， School of Materials Science and Engineering， Harbin Institute of Technology

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State Key Laboratory of Advanced Materials for Smart Sensing， General Research Institute for Nonferrous Metals

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College of Materials Science and Opto-Electronic Technology， University of Chinese Academy of Sciences

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