Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer

Qian YANG; Shi-yuan DU; Rong-si LUO

doi:10.37188/CJL.20200296

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Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer

Device Fabrication and Physics | 更新时间：2021-02-08

- Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer
- Chinese Journal of Luminescence Vol. 42, Issue 2, Pages: 250-256(2021)
- 作者机构：
  
  1.福州大学至诚学院, 福建福州 350002
  2.福建卫生职业技术学院, 福建福州 350101
  3.福建省建筑科学研究院, 福建福州 350101
- 作者简介：
- 基金信息：
  
  Education and Scientific Research Project for Young and Middle-aged Teachers of Education Department of Fujian Province
- DOI：10.37188/CJL.20200296
  CLC： TN321.5
- Published：2021-2，
  
  Received：9 October 2020，
  
  Accepted：9 December 2020
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Qian YANG, Shi-yuan DU, Rong-si LUO. Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer. [J]. Chinese Journal of Luminescence 42(2):250-256(2021)
DOI：

Qian YANG, Shi-yuan DU, Rong-si LUO. Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer. [J]. Chinese Journal of Luminescence 42(2):250-256(2021) DOI： 10.37188/CJL.20200296.

摘要

近年来，二维材料（2D materials）突触晶体管器件由于其维度低、可同时读写操作、效率高等优势，受到了研究者的广泛关注。然而，由于二维材料的工艺兼容性、重复性以及复杂的转移过程，它的实现仍然是一个巨大的挑战。本文采用简单的提拉法工艺，实现了超薄铟镓锌氧化物（In-Ga-Zn-O，IGZO）半导体层（小于8 nm）的突触晶体管，其工作电压低至3 V；并成功地模拟了重要的生物突触行为，包括兴奋性后突触电流（EPSC）、双脉冲易化（PPF）以及突触长程增强（LTP）等。在超薄半导体薄膜条件下，由于缺陷的增强效应和栅电压对超薄半导体层可控性的提高，有效提升了突触器件的记忆保持能力，使其长程性能得到增强。这种改善突触晶体管长程特性的方式，为利用普通材料制作高性能二维突触晶体管提供了一种简单易行的方法。

Abstract

In recent years

two-dimensional materials(2D materials) based synaptic transistor devices have attracted extensive attention due to their low dimension

simultaneous read-write operation and high efficiency. However

the process compatibility

repeatability and complex transfer process of these materials are still a great challenge. In this work

a simple dip-coating method was utilized to realize a synaptic transistor with an ultra-thin indium gallium zinc oxide(In-Ga-Zn-O

IGZO) semiconductor layer(less than 8 nm). The operating voltage was as low as 3 V. The important biological synaptic behaviors were successfully simulated

including excitatory post-synaptic current(EPSC)

paired pulse facilitation(PPF)

and long-term potentiation(LTP). Under ultra-thin condition

due to the enhancement effect of defects and the improvement of the controllability of ultra-thin active layer by gate voltage

the memory retention ability of our synaptic transistor is improved. Our work proposed a way to improve the long-term characteristics of synaptic transistors

and provided a simple and easy method for the preparation of high-performance ultra-thin synaptic transistors using common materials.

关键词

超薄金属氧化物薄膜晶体管突触

Keywords

ultra-thinmetal-oxide thin film transistorsynapse

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Qian YANG

Shi-yuan DU

Rong-si LUO

Related Institution

Zhicheng College， Fuzhou University

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