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Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer
Device Fabrication and Physics | 更新时间:2021-02-08
    • Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer

    • Chinese Journal of Luminescence   Vol. 42, Issue 2, Pages: 250-256(2021)
    • DOI:10.37188/CJL.20200296    

      CLC: TN321.5
    • Published:2021-2

      Received:9 October 2020

      Accepted:9 December 2020

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  • Qian YANG, Shi-yuan DU, Rong-si LUO. Preparation of High Performance Metal Oxide Synaptic Transistor with Ultra-thin Channel Layer. [J]. Chinese Journal of Luminescence 42(2):250-256(2021) DOI: 10.37188/CJL.20200296.

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Qian YANG
Shi-yuan DU
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Zhicheng College, Fuzhou University
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