Thermal Analysis and Fiber Coupling Simulation Design of Multi-single Emitters Stacked Semiconductor Laser

Jiao-jiao WANG; Lin-lin SHI; Xiao-hui MA; He ZHANG; Yan LI; Wei-yan LI; Li XU

doi:10.37188/CJL.20200243

您当前的位置：

首页 >

文章列表页 >

Thermal Analysis and Fiber Coupling Simulation Design of Multi-single Emitters Stacked Semiconductor Laser

Theoretical Calculation and Spectral Analysis | 更新时间：2021-01-12

- Thermal Analysis and Fiber Coupling Simulation Design of Multi-single Emitters Stacked Semiconductor Laser
- Chinese Journal of Luminescence Vol. 42, Issue 1, Pages: 104-110(2021)
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
- 基金信息：
  
  National Natural Science Foundation of China;National Natural Science Foundation of China;Changchun University of Science and Technology Youth Science Foundation
- DOI：10.37188/CJL.20200243
  CLC： TN248.4
- Published：2021-1，
  
  Received：14 August 2020，
  
  Accepted：22 September 2020
扫描看全文
Jiao-jiao WANG, Lin-lin SHI, Xiao-hui MA, et al. Thermal Analysis and Fiber Coupling Simulation Design of Multi-single Emitters Stacked Semiconductor Laser. [J]. Chinese Journal of Luminescence 42(1):104-110(2021)
DOI：

Jiao-jiao WANG, Lin-lin SHI, Xiao-hui MA, et al. Thermal Analysis and Fiber Coupling Simulation Design of Multi-single Emitters Stacked Semiconductor Laser. [J]. Chinese Journal of Luminescence 42(1):104-110(2021) DOI： 10.37188/CJL.20200243.

摘要

多单管合束技术是获得高输出功率密度半导体激光器的重要方法，但其存在封装方式单一、体积大等问题，难以满足更高功率密度和较好光束质量的需求。本文设计了一种多单管半导体激光器堆叠排布的封装结构，通过将多个单管半导体激光器垂直封装在辅助热沉之间，使得器件更加小型化，在充分利用单管半导体激光器优势的同时，既增加了单管半导体激光器的散热通道，又实现了在体积不增加的基础上提高输出功率。通过ZEMAX软件对3个单管进行了空间合束模拟，将光束耦合进芯径200 μm、数值孔径0.22的光纤中，可以达到28.6 W的激光输出，耦合效率为95%。

Abstract

Multi-single diode laser emitters combination technology is an important method to obtain semiconductor lasers with high output power density. The difficulty of simplex packaging method and large volume restricts their application of high power and high optical quality. In this paper

a packaging structure with vertically stacked arrangement of multi-single emitters diode lasers is designed by vertically encapsulating single diode laser emitters between auxiliary heat sinks

making the device more miniaturization. This method can not only increase the heat dissipation channel of the single diode laser emitters

but also realize the improvement of output power without increasing the volume. In simulation

with ZEMAX optical design software

3 single emitters diode lasers are coupled into a fiber with core diameter of 200 μm and NA of 0.22. The simulation results of the maximum output power of 28.6 W and the coupling efficiency of 95% were obtained.

关键词

半导体激光器有限元分析ZEMAX散热性能光纤耦合

Keywords

semiconductor laserfinite element analysisZEMAXheat dissipationfiber coupling

references

耿素杰, 王琳.半导体激光器及其在军事领域的应用[J].激光与红外, 2003, 33(4):311-312.

GENG S J, WANG L. The semiconductor laser and its applications in military[J].Laser Infrared, 2003, 33(4):311-312. (in Chinese)

马骁宇, 王俊, 刘素平.国内大功率半导体激光器研究及应用现状[J].红外与激光工程, 2008, 37(2):189-194.

MA X Y, WANG J, LIU S P. Present situation of investigations and applications in high power semiconductor lasers[J].Infrared Laser Eng., 2008, 37(2):189-194. (in Chinese)

田锟, 邹永刚, 马晓辉, 等.面发射分布反馈半导体激光器[J].中国光学, 2016, 9(1):51-64.

TIAN K, ZOU Y G, MA X H, et al.. Surface emitting distributed feedback semiconductor lasers[J].Chin. Opt., 2016, 9(1):51-64. (in Chinese)

韩晓俊, 李正佳, 朱长虹.半导体激光器在医学上的应用[J].光学技术, 1998(2):7-10.

HAN X J, LI Z J, ZHU C H. Laser diode applied in medicine[J].Opt. Technol., 1998(2):7-10. (in Chinese)

吴华玲, 郭林辉, 王昭, 等.基于双管的高亮度半导体激光器光纤耦合系统设计[J].中国激光, 2016, 43(10):1001012-1-7.

WU H L, GUO L H, WANG Z, et al.. Design of high brightness fiber-coupled diode laser system based on dual-emitters[J].Chin. J. Lasers, 2016, 43(10):1001012-1-7. (in Chinese)

周泽鹏.百瓦级高亮度半导体激光器光纤耦合设计[D].长春: 长春理工大学, 2014.

ZHOU Z P. Fiber Coupling Design of Hundred-watt High Brightness Semiconductor Lasers[D]. Changchun: Changchun University of Science and Technology, 2014. (in Chinese)

郝明明, 朱洪波, 秦莉, 等.百瓦级高亮度光纤耦合半导体激光模块的研制[J].发光学报, 2012, 33(6):651-659.

HAO M M, ZHU H B, QIN L, et al.. Reaearch on high brightness fiber coupled diode laser module with hundred watts class output power[J].Chin. J. Lumin., 2012, 33(6):651-659. (in Chinese)

KARLSEN S R, PRICE R K, REYNOLDS M, et al.. 100-W 105-μm 0.15 NA fiber coupled laser diode module[C].Proceedings of SPIE 7198, High-power Diode Laser Technology and Applications Ⅶ, San Jose, 2009: 71980T-1-8.

HOU L B, ZHANG H, XU L, et al.. Design of high-brightness 976 nm fiber-coupled laser diodes based on ZEMAX[C].Proceedings of SPIE9521, Selected Papers from Conferences of The Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part Ⅰ, Nanjing, 2015: 95211F-1-8.

WANG B, ZHU J. Spectral beam combining of multi-single emitters[J].Proceedings of SPIE 9733,High-power Diode Laser Technology and Applications ⅩⅣ, San Francisco, 2016:97330F.

谢文君, 曹银花, 许商瑞, 等.基于曲面空间合束的多单管半导体激光光纤耦合[J].发光学报, 2018, 39(9):1280-1284.

XIE W J, CAO Y H, XU S R, et al.. Fiber coupling of multi-single emitters diode lasers based on curved surface spatial combination[J].Chin. J. Lumin., 2018, 39(9):1280-1284. (in Chinese)

FRITSCHE H, KRUSCHKE B, KOCH R, et al.. High brightness direct diode laser with kW output power[J].Proceedings of SPIE8965, High-power Diode Laser Technology and Applications Ⅻ, San Francisco, 2014:89650G-1-7.

FARMER J N, SCHULTE D E, YAN Y. Vertically displaced stack of multi-mode single emitter laser diodes: USA, 20090103580A1[P]. 2009-04-23.

王文, 高欣, 周泽鹏, 等.百瓦级多芯片半导体激光器稳态热分析[J].红外与激光工程, 2014, 43(5):1438-1443.

WANG W, GAO X, ZHOU Z P, et al.. Steady-state thermal analysis of hundred-watt semiconductor laser with multichip-packaging[J].Infrared Laser Eng., 2014, 43(5):1438-1443. (in Chinese)

杨宏宇, 刘林, 舒世立, 等.大功率半导体激光器有源区温度影响因素分析[J].江苏科技大学学报(自然科学版), 2017, 31(2):143-147.

YANG H Y, LIU L, SHU S L, et al.. Analysis on influencing factors of active region temperature of high power semiconductor laser module[J].J. Jiangsu Univ. Sci. Technol. (Nat. Sci. Ed.), 2017, 31(2):143-147. (in Chinese)

姜晓光, 赵英杰, 吴志全.基于ANSYS半导体激光器热特性模拟与分析[J].长春理工大学学报(自然科学版), 2010, 33(1):41-43.

JIANG X G, ZHAO Y J, WU Z Q. Thermal characteristic simulation and analysis of semiconductor laser based on ANSYS[J].J. Changchun Univ. Sci. Technol. (Nat. Sci. Ed.), 2010, 33(1):41-43. (in Chinese)

辛国锋, 沈力, 皮浩洋, 等.高功率半导体激光器热阻测量的实验研究[J].激光与光电子学进展, 2010, 47(11):112501-1-5.

XIN G F, SHEN L, PI H Y, et al.. Experimental study of thermal resistance measurement for high power laser diode array[J].Laser Optoelect. Prog., 2010, 47(11):112501-1-5. (in Chinese)

WU Y L, DONG Z Y, CHEN Y Q, et al.. Beam shaping for kilowatt fiber-coupled diode lasers by using one-step beam cutting-rotating of prisms[J].Appl. Opt., 2016, 55(34):9769-9773.

于贺, 马晓辉, 赵鑫, 等.基于半导体激光器堆栈的光纤耦合技术[J].中国激光, 2017, 44(11):1101006-1-6.

YU H, MA X H, ZHAO X, et al.. Fiber coupling technology based on diode laser stack[J].Chin. J. Lasers, 2017, 44(11):1101006-1-6. (in Chinese)

Views

108

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Design of Fiber-coupled Laser Diode Module Based on Three-wavelengths Multiplexing by ZEMAX

Heat Transfer Characteristics of High Power Semiconductor Laser with Graphite Sheet as Auxiliary Heat Sink

Design of 915 nm/974 nm Single-emitter Laser Diode Fiber-coupled Module

Fiber Coupling of Multi-single Emitters Diode Lasers Based on Curved Surface Spatial Combination

Related Author

LIU Cui-cui

WANG Xin

JING Hong-qi

WU Xia

WANG Cui-luan

MA Xiao-yu

Jiao-jiao WANG

Lin-lin SHI

Related Institution

Institute of Semiconductors, Chinese Academy of Sciences

University of Chinese Academy of Sciences

Natural Key Laboratory on High Power Semiconductor Laser, Changchun University of Science and Technology

National Key Laboratory on High Power Semiconductor Laser, Changchun University of Science and Technology

National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰