Fiber Coupling of Semiconductor Laser Based on Wedge-shaped Lens

Zhao-shi GUO; Wen-bin QIN; Jing LI; You-qiang LIU; Yin-hua CAO; Jiao MENG; Jiao-yang GUAN; Jian-yu PAN; Tian LAN; Qing-xuan LI; Zhi-yong WANG

doi:10.37188/CJL.20200233

您当前的位置：

首页 >

文章列表页 >

Fiber Coupling of Semiconductor Laser Based on Wedge-shaped Lens

Device Fabrication and Physics | 更新时间：2021-01-12

- Fiber Coupling of Semiconductor Laser Based on Wedge-shaped Lens
- Chinese Journal of Luminescence Vol. 42, Issue 1, Pages: 98-103(2021)
- 作者机构：
  
  1.北京工业大学材料与制造学部先进半导体光电技术研究所, 北京 100124
  2.中国电子科技集团公司第五十三研究所, 天津 300308
- 作者简介：
- 基金信息：
  
  Beijing Municipal Science and Technology Commission
- DOI：10.37188/CJL.20200233
  CLC：
扫描看全文
Zhao-shi GUO, Wen-bin QIN, Jing LI, et al. Fiber Coupling of Semiconductor Laser Based on Wedge-shaped Lens. [J]. Chinese Journal of Luminescence 42(1):98-103(2021)
DOI：

Zhao-shi GUO, Wen-bin QIN, Jing LI, et al. Fiber Coupling of Semiconductor Laser Based on Wedge-shaped Lens. [J]. Chinese Journal of Luminescence 42(1):98-103(2021) DOI： 10.37188/CJL.20200233.

摘要

在半导体激光器的光纤耦合系统中，bar条的各发光点指向偏差（偏向角）会恶化光束整形效果，显著降低光纤耦合效率。针对该现象提出利用引入修正角的楔形整形镜补偿发光点的指向偏差，改善激光束的指向性和光束整形效果。通过ZEMAX软件模拟与实验验证，在光纤耦合系统中使用引入修正角后的楔形整形镜片，其整形效果显著改善，测量的光束参数积（BPPs）在快轴和慢轴方向分别为7.25 mm·mrad和5.05 mm·mrad，聚焦光斑为148 μm×135 μm（包含90%能量）。该系统将单个bar条耦合进芯径200 μm、数值孔径（NA）0.2的光纤中，在注入电流60 A时，获得稳定输出功率53 W，对应电-光转换效率为47%，光纤耦合效率为87%，相对于使用修正前的楔形整形镜片，光纤耦合效率提高了7%。

Abstract

In fiber coupling system of diode laser bars, directivity deviation of emitters deteriorates the beam shaping seriously, thus leading to the degradation of fiber coupling efficiency. In order to solve this problem properly, in this paper, a wedge-shaped lens with calibrated angle is proposed to compensate the directivity deviation of the emitters and then improve the directivity of the laser beam and shaping effect. Both ZEMAX simulation and experiments are conducted. The results show that significant improvements of the beam shaping are obtained by using such wedge-shaped lens with calibrated angle. The beam parameter products(BPPs) calculated in the fast and slow axis are 7.25 mm·mrad and 5.05 mm·mrad respectively, and the focal spot dimension is 148 μm×135 μm(with 90% energy enclosed). After coupled the laser beams into a standard fiber with 200 μm core diameter and 0.2 numerical aperture(NA), the output power is measured to be 53 W and the electrical-to-optical conversion efficiency is 47% at the inject current of 60 A. Finally, the fiber coupling efficiency of 87% is achieved, increased by 7% compared to that of the conventional wedge-shaped lens.

关键词

半导体激光器楔形整形镜光束整形光纤耦合

Keywords

diode laser barswedge-shaped lensbeam shapingfiber coupling

references

LI Z J, LI T, LU P, et al.. A survey of the high power high brightness fiber coupled laser diode[C].Proceedings of 2012 International Conference on Optoelectronics and Microelectronics, Changchun, 2012: 52-55.

王立军, 宁永强, 秦莉, 等.大功率半导体激光器研究进展[J].发光学报, 2015, 36(1):1-19.

WANG L J, NING Y Q, QIN L, et al.. Development of high power diode laser[J].Chin. J. Lumin., 2015, 36(1):1-19. (in Chinese)

HEINEMANN S, FRITSCHE H, KRUSCHKE B, et al.. Compact high brightness diode laser emitting 500 W from a 100μm fiber[C].Proceedings of SPIE High-power Diode Laser Technology and ApplicationsⅪ, San Francisco, 2013: 86050Q.

HAN Z G, MENG L Q, HUANG Z Q, et al.. Determination of the laser beam quality factor (M2) by stitching quadriwave lateral shearing interferograms with different exposures[J].Appl. Opt., 2017, 56(27):7596-7603.

闫宏宇, 高欣, 宋健, 等. 976 nm宽条形高功率半导体激光器的光束质量M2评价[J].发光学报, 2019, 40(2):196-203.

YAN H Y, GAO X, SONG J, et al.. Evaluation of beam quality M2 for 976 nm wide stripe high power semiconductor laser[J].Chin. J. Lumin., 2019, 40(2):196-203. (in Chinese)

李再金, 胡黎明, 王烨, 等. 808 nm含铝半导体激光器的腔面镀膜[J].光学精密工程, 2010, 18(6):1258-1263.

LI Z J, HU L M, WANG Y, et al.. Facet coating for 808 nm Al -containing semiconductor laser diodes[J].Opt. Precision Eng., 2010, 18(6):1258-1263. (in Chinese)

田雨.新型结构准直系统设计与激光束耦合分析[D].成都: 电子科技大学, 2018.

TIAN Y. Design of A New Structure Collimation System and Analysis of Laser Beam Coupling[D]. Chengdu: University of Electronic Science and Technology of China, 2018. (in Chinese)

YAMAGUCHI S, KOBAYASHI T, SAITO Y, et al.. Collimation of emissions from a high-power multistripe laser-diode bar with multiprism array coupling and focusing to a small spot[J].Opt. Lett., 1995, 20(8):898-900.

王玉, 张玲, 杨盈莹, 等.高功率蓝紫光半导体激光器及其光场匀化研究[J].半导体光电, 2019, 40(1):38-41.

WANG Y, ZHANG L, YANG Y Y, et al.. High-power blue-violet laser diode and its optical field homogenization[J].Semiconduct. Optoelectron., 2019, 40(1):38-41. (in Chinese)

EHLERS R, DU K, BAUMANN M, et al.. Beam shaping and fibre coupling of high-power diode laser arrays[C].Proceedings of SPIE Lasers and Optics in Manufacturing Ⅲ, Munich, 1997: 639-644.

BACHMANN A, LAUER C, FURITSCH M, et al.. Recent brightness improvements of 976 nm high power laser bars[C].Proceedings of SPIE High-power Diode Laser Technology ⅩⅤ, San Francisco, 2017: 1008602.

LIN G Y, ZHAO P F, DONG Z Y, et al.. Beam-shaping technique for fiber-coupled diode laser system by homogenizing the beam quality of two laser diode stacks[J].Opt. Laser Technol., 2020, 123:105919.

刘翠翠, 王翠鸾, 王鑫, 等.半导体激光器双波长光纤耦合模块的ZEMAX设计[J].红外与激光工程, 2018, 47(1):0105002-1-6.

LIU C C, WANG C L, WANG X, et al.. Design of double wavelengths fiber coupled module of semiconductor diode laser by ZEMAX[J].Infrared Laser Eng., 2018, 47(1):0105002-1-6. (in Chinese)

朱洪波, 郝明明, 彭航宇, 等.基于808nm半导体激光器单管合束技术的光纤耦合模块[J].中国激光, 2012, 39(5):0502001-1-5.

ZHU H B, HAO M M, PENG H Y, et al.. Module of fiber coupled diode laser based on 808 nm single emitters combination[J].Chin. J. Lasers, 2012, 39(5):0502001-1-5. (in Chinese)

GHASEMI S H, HANTEHZADEH M R, SABBAGHZADEH J, et al.. Beam shaping design for coupling high power diode laser stack to fiber[J].Appl. Opt., 2011, 50(18):2927-2930.

YU J H, GUO L H, WU H L, et al.. Beam shaping design for compact and high-brightness fiber-coupled laser-diode system[J].Appl. Opt., 2015, 54(18):5759-5763.

袁庆贺, 井红旗, 仲莉, 等.大功率半导体激光器封装热应力研究[J].中国激光, 2019, 46(10):1001009-1-6.

YUAN Q H, JING H Q, ZHONG L, et al.. Thermal stressin high-power semiconductor laser packaging[J].Chin. J. Lasers, 2019, 46(10):1001009-1-6. (in Chinese)

张哲铭, 薄报学, 张晓磊, 等.半导体激光器巴条封装应力及评价[J].发光学报, 2018, 39(3):343-348.

ZHANG Z M, BO B X, ZHANG X L, et al.. Evaluation of packaging induced stress of semiconductor laser bar[J].Chin. J. Lumin., 2018, 39(3):343-348. (in Chinese)

PELEGRINA-BONILLA G, MITRA T. Compensation of the laser diode smile by the use of micro-optics[J].Appl. Opt., 2018, 57(13):3329-3333.

LIU Y Q, CAO Y H, XU C X, et al.. 1000 W compound coupling high beam quality diode laser[C].Proceedings of SPIE International Symposium on Photoelectronic Detection and Imaging 2009, Beijing, 2009: 738231-1-8.

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Thermal Analysis and Fiber Coupling Simulation Design of Multi-single Emitters Stacked Semiconductor Laser

Design of 915 nm/974 nm Single-emitter Laser Diode Fiber-coupled Module

Fiber Coupling of Multi-single Emitters Diode Lasers Based on Curved Surface Spatial Combination

Focus Optical System for Kilowatt-class Direct Laser Diodes Stack

Related Author

No data

Related Institution

The 53th Research Institute of China Electronic Science &Technology, Tianjin 300308,Chiina

State Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and Technology

University of Chinese Academy of Sciences

National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences

Institute of Laser Engineering, Beijing University of Technology

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰