Weng-cai ZUO, Shang-sheng WEN, Yue ZHOU, et al. Failure Mechanism Analysis of Reverse Leakage in GaN-based White LED. [J]. Chinese Journal of Luminescence 41(11):1431-1437(2020)
DOI:
Weng-cai ZUO, Shang-sheng WEN, Yue ZHOU, et al. Failure Mechanism Analysis of Reverse Leakage in GaN-based White LED. [J]. Chinese Journal of Luminescence 41(11):1431-1437(2020) DOI: 10.37188/CJL.20200211.
Failure Mechanism Analysis of Reverse Leakage in GaN-based White LED
The failure mechanism of leakage in LED samples was studied. Since leakage has a negative impact on LED quality
it is necessary to analyze how the process works on the leakage. Two groups of failure samples were selected for study. Through testing
there are abnormal leakage at the positive electrodes under the emission microscope. The section of the sample was prepared by fully automated argon ion polishing system and observed by scanning electron microscope. SEM observation showed that in the chips there were holes in electrodes and obvious cracks in the epitaxial layer corresponding to the holes. According to the analysis
electrode cavity is generated during welding. In the subsequent high-temperature reflow welding
packaging also using process
pressure and stress are concentrated at the crack
which causes damage of GaN epitaxial layer and leads to electric leakage. It provides a good reference scheme for LED chip leakage detection means and mechanism analysis. What's more
it provides a theoretical reference direction for reducing chip cracks and holes.
关键词
发光二极管失效分析漏电静电
Keywords
light emitting diodefailure analysisleakagestatic
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