Preparation and Electrical Characterization of B-N Codoped p-type MgZnO Film

您当前的位置：

首页 >

文章列表页 >

Preparation and Electrical Characterization of B-N Codoped p-type MgZnO Film

Synthesis and Properties of Materials | 更新时间：2020-10-12

|

- Preparation and Electrical Characterization of B-N Codoped p-type MgZnO Film
- Chinese Journal of Luminescence Vol. 41, Issue 10, Pages: 1262-1268(2020)
- 作者机构：
  
  北华大学理学院, 吉林吉林 132013
- 作者简介：
- 基金信息：
  
  Scientific and Technological Research Project of The "13th Five-Year Plan" of Jilin
- DOI：10.37188/CJL.20200210
  CLC： O472
- Published：2020-10，
  
  Received：17 July 2020，
  
  Accepted：16 August 2020
扫描看全文
Li-li GAO, Xu WANG. Preparation and Electrical Characterization of B-N Codoped p-type MgZnO Film. [J]. Chinese Journal of Luminescence 41(10):1262-1268(2020)
DOI：

Li-li GAO, Xu WANG. Preparation and Electrical Characterization of B-N Codoped p-type MgZnO Film. [J]. Chinese Journal of Luminescence 41(10):1262-1268(2020) DOI： 10.37188/CJL.20200210.

摘要

p型MgZnO的制备一直是高效紫外发光和日盲紫外探测器件研究领域的重要课题之一。本文针对N掺杂p型MgZnO薄膜材料中存在的空穴浓度低、电阻率高等科学问题，采取磁控溅射技术，利用氮气与氩气混合气体分别溅射MgZnO陶瓷靶和B-N共掺杂MgZnO陶瓷靶的方法，制备出N掺杂和B-N共掺杂MgZnO薄膜。通过Hall测量表征发现两种薄膜均呈现p型导电特性，与N掺杂MgZnO相比，B-N共掺MgZnO的空穴浓度从5.53×10

15

cm

-3

提高到2.63×10

17

cm

-3

，而迁移率变化并不明显（从0.83 cm

2

·V

-1

·s

-1

减小到0.75 cm

2

·V

-1

·s

-1

），导致电阻率从1.36×10

3

Ω·cm减小到31.70 Ω·cm。通过XRD和XPS表征揭示了在B-N共掺MgZnO中，B替代Mg或Zn，N除了具有N

O

和（N

2

）

O

两种掺杂状态外，还有以单原子占据O位但与B成键的第三种掺杂状态，证明B掺杂可以提高N在MgZnO中的受主掺杂浓度，但对空穴散射影响很小，从而提高p型MgZnO的空穴浓度，降低电阻率。

Abstract

Preparation of p-type MgZnO film is still one subject of high-efficiency ultraviolet luminescence and solar-blind ultraviolet photodetectors devices. In this work

aiming at the problems of low carrier concentration and high resistivity in N-doped p type MgZnO film

using 99.99% pure nitrogen and argon as sputtering gas

p-type B-N co-doped MgZnO film and N doped MgZnO film were deposited on quartz substrate by radio frequency magnetron sputtering with B-N co-doped MgZnO target and N doped MgZnO target respectively. It is found that the prepared MgZnO films show p-type electrical properties by a Hall effect measurement. Compared with N-doped MgZnO film

the carrier concentration of B-N co-doped MgZnO film is increased from 5.53×10

15

cm

-3

to 2.63×10

17

cm

-3

the Hall mobility is decreased from 0.83 cm

2

·V

-1

·s

-1

to 0.75 cm

2

·V

-1

·s

-1

and the resistivity is decreased remarkably from 1.36×10

3

Ω·cm to 31.70 Ω·cm. The measurement of XRD and XPS reveals that B occupies Zn site or Mg site and N has three doping states. The first state is that N atom occupies O site which is the nearest neighbor with Zn or Mg atom

forming N

O

. The second state is that N

2

occupies O site

forming (N

2

)

O

. The third state is that N atom occupies O site which is the nearest neighbor with B atom

forming B-N pair. Therefore

B doping can improve the N dopant acceptor concentration

affect little on holes scattering and reduce resistivity of p-type MgZnO.

关键词

射频磁控溅射MgZnO薄膜B-N共掺杂p型

Keywords

radio frequency magnetron sputteringMgZnO thin filmsB-N codopingp-type

references

LIEN S T, LI H C, YANG Y J, et al.. Atmospheric pressure plasma jet annealed ZnO films for MgZnO/ZnO heterojunctions[J].J. Phys. D: Appl. Phys., 2013, 46(7):075202.

LI Y F, YAO B, LU Y M, et al.. Realization of p-type conduction in undoped MgxZn1-xO thin films by controlling Mg content[J].Appl. Phys. Lett., 2007, 91(23):232115-1-3.

魏志鹏, 吴春霞, 吕有明, 等. MgxZn1-xO合金制备及MgZnO/ZnO异质结构的光学性质[J].发光学报, 2006, 27(5):831-833.

WEI Z P, WU C X, LU Y M, et al.. MgxZn1-xO alloy grown by p-MBE and optical properties of MgZnO/ZnO heterostructure[J].Chin. J. Lumin., 2006, 27(5):831-833. (in Chinese).

LIEN S T, LI H C, YANG Y J, et al.. Atmospheric pressure plasma jet annealed ZnO films for MgZnO/ZnO heterojunctions[J].J. Phys. D:Appl. Phys., 2013, 46(7):075202.

申德振, 梅增霞, 梁会力, 等.氧化锌基材料、异质结构及光电器件[J].发光学报, 2014, 35(1):1-60.

SHEN D Z, MEI Z X, LIANG H L, et al.. ZnO-based material, heterojunction and photoelctronic device[J].Chin. J. Lumin., 2014, 35(1):1-60. (in Chinese)

LI J E, LI W B, GU J H, et al.. Carrier transport improvement in ZnO/MgZnO multiple-quantum-well ultraviolet light-emitting diodes by energy band modification on MgZnO barriers[J].Opt. Commun., 2020, 459:124978.

WANG H Q, WANG A L, SUN Y M, et al.. Synthesis and characterization of F-doped MgZnO films prepared by RF magnetron co-sputtering[J].Appl. Surf. Sci., 2020, 503:144273.

BADI N, KHASIM S, PASHA A. Synthesis and characterization of urea-doped MgZnO nanoparticles for electronic applications[J].Appl. Phys. A, 2019, 125(12):851.

QIU M X, YE Z Z, HE H P, et al.. Effect of Mg content on structural, electrical, and optical properties of Li-doped Zn1-x-MgxO thin films[J].Appl. Phys. Lett., 2007, 90(18):182116-1-3.

赵鹏程, 张振中, 姚斌, 等. N掺杂MgZnO薄膜的光电性质[J].发光学报, 2019, 40(8):956-960.

ZHAO P C, ZHANG Z Z, YAO B, et al.. Photoelectric properties of N doped MgZnO thin films[J].Chin. J. Lumin., 2019, 40(8):956-960. (in Chinese)

WANG P, CHEN N F, YIN Z G, et al.. p-type Zn1-xMgxO films with Sb doping by radio-frequency magnetron sputtering[J].Appl. Phys. Lett., 2006, 89(20):202102.

MOHANTA S K, NAKAMURA A, TEMMYO J. Synthesis and characterization of N, In co-doped MgZnO films using remote-plasma-enhanced metalorganic chemical vapor deposition[J].J. Cryst. Growth, 2013, 375:1-5.

CHIEN J F, SHIH H Y, LIAO H Y, et al.. P-type conductivity of MgZnO:(N:Ga) thin films prepared by remote plasma in-situ atomic layer doping[J].ECS J. Solid State Sci. Technol., 2013, 11(2):R249-R253.

YANG T H, CHIU K C, WU J M, et al.. Compensation of N-related defects in p-type Al-N codoped MgZnO films[J].Electrochem. Solid State Lett., 2012, 15(5):H153-H156.

YAMAMOTO T. Codoping method for solutions of doping problems in wide-band-gap semiconductors[J].Phys. Stat. Sol. A, 2002, 193(3):423-433.

WANG L G, ZUNGER A. Cluster-doping approach for wide-gap semiconductors:the case of p-type ZnO[J].Phys. Rev. Lett., 2003, 90(25):256401.

CONG C X, YAO B, XING G Z, et al.. Control of structure, conduction behavior, and band gap of Zn1-xMgxO films by nitrogen partial pressure ratio of sputtering gases[J].Appl. Phys. Lett., 2006, 89(26):262108-1-3.

隋瑛锐.共掺杂p型ZnO和富氮Zr-N薄膜的制备、性能及表征[D].长春: 吉林大学, 2010.

SUI Y R. Preparation, Properties and Characterization of Codoped p-type Zinc Oxide and N-rich Zr-N Thin Films [D]. Changchun: Jilin University, 2010. (in Chinese)

LU J G, YE Z Z, ZHUGE F, et al.. p-type conduction in N-Al co-doped ZnO thin films[J].Appl. Phys. Lett., 2004, 85(15):3134-3135.

YUAN G D, YE Z Z, ZHU L P, et al.. Control of conduction type in Al- and N-codoped ZnO thin films[J].Appl. Phys. Lett., 2005, 86(20):202106-1-3.

KUMAR M, KIM T H, KIM S S, et al.. Growth of epitaxial p-type ZnO thin films by codoping of Ga and N[J].Appl. Phys. Lett., 2006, 89(11):112103-1-3.

BIAN J M, LI X M, GAO X D, et al.. Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis[J].Appl. Phys. Lett., 2004, 84(4):541-543.

PERKINS C L, LEE S H, LI X N, et al.. Identification of nitrogen chemical states in N-doped ZnO via X-ray photoelectron spectroscopy[J].J. Appl. Phys., 2005, 97(3):034907.

GAO L L, YAO B, LIU B, et al.. Effects of Mg concentration on solubility and chemical state of N in N-doped MgZnO alloy[J].J. Chem. Phys., 2010, 133(20):204501-1-5.

RIVIÈRE J P, PACAUD Y, CAHOREAU M. Spectroscopic studies of BN films deposited by dynamic ion mixing[J].Thin Solid Films, 1993, 227(1):44-53.

FAUSSEMAGNE A, DELICHÈRE P, MONCOFFRE N, et al.. Study of BN formation by dual implantation of boron and nitrogen in a 100Cr6 bearing steel[J].Surf. Coat. Technol., 1996, 83(1-3):70-73.

SUI Y R, YAO B, YANG J H, et al.. Deposition and properties of B-N codoped p-type ZnO thin films by RF magnetron sputtering[J].Appl. Surf. Sci., 2010, 256(9):2726-2730.

方容川.固体光谱学[M].合肥:中国科学技术大学出版社, 2001.

FANG R C. Spectra in Solid State [M]. Hefei:University of Science and Technology of China Press, 2001. (in Chinese)

YAN Y F, AHN K S, SHET S, et al.. Band gap reduction of ZnO for photoelectrochemical splitting of water[C].Proceedings of SPIE Solar Hydrogen and Nanotechnology Ⅱ, San Diego, California, United States, 2007, 6650: 66500H.

0

Views

76

下载量

0

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Related Articles

Photoelectric Properties of N Doped MgZnO Thin Films

Optical and Electrical Properties of p-type ZnO∶N Films Grown by N-plasma Assisted Pulsed Laser Deposition

Fabrication and Properties of ZnO MSM UV Detectors

Structural and Photoluminescence Properties of Nd-doped ZnO Thin Films Grown by RF Magnetron Sputtering

Solar-blind Photodetectors Based on MgZnO Thin Films

Related Author

LI Xian-li

LI Bing-hui

YAO Bin

ZHANG Zhen-zhong

ZHAO Peng-cheng

LIU Yi-chun

LI Xing-hua

XU Hai-yang

Related Institution

College of Electronic Science, Northeast Petroleum University

State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Department of Physics, Jilin University

Center for Advanced Optoelectronic Functional Materials Research and Key Laboratory for UV Light-Emitting Materials and Technology of Ministry of Education, Northeast Normal University

Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences

Address：No.3888 Dong Nanhu Road, Changchun, Jilin, China Postal code：130033
Tel：0431-86176862 Email：fgxbt@126.com
Technical support is provided by Beijing Founder electronics co., LTD 吉ICP备11002662号-17 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.

⁰