Preparation of p-type MgZnO film is still one subject of high-efficiency ultraviolet luminescence and solar-blind ultraviolet photodetectors devices. In this work, aiming at the problems of low carrier concentration and high resistivity in N-doped p type MgZnO film, using 99.99% pure nitrogen and argon as sputtering gas, p-type B-N co-doped MgZnO film and N doped MgZnO film were deposited on quartz substrate by radio frequency magnetron sputtering with B-N co-doped MgZnO target and N doped MgZnO target respectively. It is found that the prepared MgZnO films show p-type electrical properties by a Hall effect measurement. Compared with N-doped MgZnO film, the carrier concentration of B-N co-doped MgZnO film is increased from 5.53×10,15, cm,-3,to 2.63×10,17, cm,-3, the Hall mobility is decreased from 0.83 cm,2,·V,-1,·s,-1,to 0.75 cm,2,·V,-1,·s,-1, and the resistivity is decreased remarkably from 1.36×10,3, Ω·cm to 31.70 Ω·cm. The measurement of XRD and XPS reveals that B occupies Zn site or Mg site and N has three doping states. The first state is that N atom occupies O site which is the nearest neighbor with Zn or Mg atom, forming N,O,. The second state is that N,2, occupies O site, forming (N,2,),O,. The third state is that N atom occupies O site which is the nearest neighbor with B atom, forming B-N pair. Therefore, B doping can improve the N dopant acceptor concentration, affect little on holes scattering and reduce resistivity of p-type MgZnO.
radio frequency magnetron sputteringMgZnO thin filmsB-N codopingp-type
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