Growth Method and Growth Condition Dependence of the Polarity of GaN Grown on the GaAs(111) Substrate

Hasegawa F; Souda R

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Growth Method and Growth Condition Dependence of the Polarity of GaN Grown on the GaAs(111) Substrate

更新时间：2020-08-11

- Growth Method and Growth Condition Dependence of the Polarity of GaN Grown on the GaAs(111) Substrate
- Chinese Journal of Luminescence Vol. 22, Issue 4, Pages: 315-318(2001)
- 作者机构：
  
  1. National Institute for Research in Inorganic Materials, Tsukuba 305-0044, Japan
  2. University of Tsukuba, Institute of Applied Physics, Tsukuba 305-8573, Japan
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN312.8
- Received：17 March 2001，
  
  Revised：20 July 2001，
  
  Published：30 November 2001
- 稿件说明：
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Hasegawa F, Souda R . GaAs(111)衬底上生长的GaN的极性与生长方法和生长条件的关系[J]. 发光学报, 2001,22(4): 315-318

Hasegawa F, Souda R. Growth Method and Growth Condition Dependence of the Polarity of GaN Grown on the GaAs(111) Substrate[J]. Chinese Journal of Luminescence, 2001,22(4): 315-318
Hasegawa F, Souda R . GaAs(111)衬底上生长的GaN的极性与生长方法和生长条件的关系[J]. 发光学报, 2001,22(4): 315-318 DOI：

Hasegawa F, Souda R. Growth Method and Growth Condition Dependence of the Polarity of GaN Grown on the GaAs(111) Substrate[J]. Chinese Journal of Luminescence, 2001,22(4): 315-318 DOI：

摘要

研究了在GaAs(111)衬底上生长的六角相GaN的极性的相关关系.在高Ⅴ/Ⅲ比的条件下用MOVPE和MOMBE方法生长的GaN的极性和GaAs衬底的极性一致;在(111)A-Ga表面上的生长层呈现Ga的极性

而在(111)B-As表面上的生长层呈现N的极性.然而

在低的Ⅴ/Ⅲ比

或采用一个AIN中间层的条件下

用HVPE和MOMBE方法在GaAs(111)B表面上生长的GaN呈现出Ga的极性.目前

其原因尚不清楚

但是这些结果表明采用HVPE生长方法或用一高温AlN阻挡层可以得到高质量的GaN.

Abstract

Dependence of polarity of hexagonal GaN on that of GaAs(111) substrates was investigated.GaN grown by MOVPE and MOMBE with a high Ⅴ/Ⅲ ratio followed polarity of the GaAs substrate;a layer grown on the(111) A-Ga-surface showed Ga polarity and that on the(111) B-As-surface showed N polarity.However

GaN grown on GaAs(111) B surface showed Ga polarity when the layer was grown by HVPE

MOMBE with a low Ⅴ/Ⅲ ratio

or with an AIN intermediate layer.The reason is not made clear yet

but these results suggest that HVPE growth or an MN high temperature buffer layer gives a better quality GaN.

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