您当前的位置：
首页 >
文章列表页 >
AlUMINUM NITRIDE THIN FILM PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING
更新时间：2020-08-11
|

    • AlUMINUM NITRIDE THIN FILM PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING

    • Chinese Journal of Luminescence   Vol. 20, Issue 2, Pages: 165-169(1999)

    • Published：30 May 1999，

      Received：13 July 1998，

    扫 描 看 全 文

  • Zhao Yanli, Zhong Guozhu, Fan Xiwu, Li Changhua. AlUMINUM NITRIDE THIN FILM PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING[J]. Chinese Journal of Luminescence, 1999,20(2): 165-169 DOI：

  •  
  •  

0

Views

56

下载量

2

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Controllable Preparation and Photovoltaic Property of SnS Thin Films
Electrochromic Properties of WO3 Film by Spin-coating
Enhanced Photoluminescence of Tb3+ Ions andSnO2 Nanocrystals Codoped Silica Thin Films
Optical Properties of Zn and Cu Co-doped TiO2: SiO2 Thin Film Materials
Photoluminescence Properties of Yb3+-doped CaWO4 Thin Films Grown by Radio Frequency Magnetron Sputtering

Related Author

ZHANG Han
WANG Peng-jun
ZHANG Xiao-wei
CHE Jin-ming
CHEN Kai-qi
SHU Jun-peng
ZHANG Hui-hong
ZHANG Guan-guang

Related Institution

College of Mathematical, Physics and Electronic Information Engineering, Wenzhou University
Faculty of Electrical Engineering and Computer Science, Ningbo University
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, School of Materials Science and Engineering, South China University of Technology
National Laboratory of Solid State Microstructures, Nanjing University
Faculty of Electrical Engineering and Computer Science, Ningbo University
0