AlUMINUM NITRIDE THIN FILM PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING
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AlUMINUM NITRIDE THIN FILM PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING
Chinese Journal of LuminescenceVol. 20, Issue 2, Pages: 165-169(1999)
作者机构:
1. 中国科学院长春物理研究所 长春,130021
2. 中国科学院激发态物理开放研究实验室 长春,130021
作者简介:
基金信息:
DOI:
CLC:
Published:30 May 1999,
Received:13 July 1998,
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ZHAO YANLI, ZHONG GUOZHU, FAN XIWU, et al. AlUMINUM NITRIDE THIN FILM PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING. [J]. Chinese journal of luminescence, 1999, 20(2): 165-169.
DOI:
ZHAO YANLI, ZHONG GUOZHU, FAN XIWU, et al. AlUMINUM NITRIDE THIN FILM PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING. [J]. Chinese journal of luminescence, 1999, 20(2): 165-169.DOI:
AlUMINUM NITRIDE THIN FILM PREPARED BY RADIO FREQUENCY MAGNETRON SPUTTERING
Aluminum nitride thin film was successfully prepared by radio frequency magnetron sputtering with target of high pure Al in atomosphere of high pure N
2
Ar mixture (purity is 99.999%). Effect of different gas ratio and substrate temperature on crystallinity of the thin films was studied. Annealing can improve the crystallinity. Blue-violet cathodoluminescence was found at room temperature in the AlN thin film annealed at 960℃ for 1hr.
Controllable Preparation and Photovoltaic Property of SnS Thin Films
Electrochromic Properties of WO3 Film by Spin-coating
Enhanced Photoluminescence of Tb3+ Ions andSnO2 Nanocrystals Codoped Silica Thin Films
Optical Properties of Zn and Cu Co-doped TiO2: SiO2 Thin Film Materials
Photoluminescence Properties of Yb3+-doped CaWO4 Thin Films Grown by Radio Frequency Magnetron Sputtering
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