THEORY AND EXPERIMENTS OF GaInASP/InP SUPER LATTICE GROWTH BY VERY THIN SOLUTION LPE

Li Xun; Chen Genxiang; Jian Shuisheng

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THEORY AND EXPERIMENTS OF GaInASP/InP SUPER LATTICE GROWTH BY VERY THIN SOLUTION LPE

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- THEORY AND EXPERIMENTS OF GaInASP/InP SUPER LATTICE GROWTH BY VERY THIN SOLUTION LPE
- Chinese Journal of Luminescence Vol. 16, Issue 1, Pages: 70-77(1995)
- 作者机构：
  
  北方交通大学光波技术研究所北京,100044
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：28 February 1995，
  
  Received：25 April 1994，
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李洵, 陈根祥, 简水生. 超薄溶液LPE技术生长GaInAsP/InP超晶格的理论与实验[J]. 发光学报, 1995,16(1): 70-77

Li Xun, Chen Genxiang, Jian Shuisheng. THEORY AND EXPERIMENTS OF GaInASP/InP SUPER LATTICE GROWTH BY VERY THIN SOLUTION LPE[J]. Chinese Journal of Luminescence, 1995,16(1): 70-77
李洵, 陈根祥, 简水生. 超薄溶液LPE技术生长GaInAsP/InP超晶格的理论与实验[J]. 发光学报, 1995,16(1): 70-77 DOI：

Li Xun, Chen Genxiang, Jian Shuisheng. THEORY AND EXPERIMENTS OF GaInASP/InP SUPER LATTICE GROWTH BY VERY THIN SOLUTION LPE[J]. Chinese Journal of Luminescence, 1995,16(1): 70-77 DOI：

摘要

本文由有限厚度溶液及自由表面浓度和恒定表面浓度二种模型出发对LPE生长动力学过程进行了理论分析

并导出了实现薄层生长的参数控制条件

根据这一条件用LPE技术实际生长了GaInAsP/InP超晶格

570℃下用突冷法及被压缩到200μm～500μm的薄层溶液在0.2s的驻留时间内分别重复长出了5nm(Ga

0.40

0.60

0.89

0.11

)和10nm(InP)的超晶格

证明了用重复推拉舟的LPE系统在一定的参数条件下可以生长MQW结构.

Abstract

sing the "free surface concentration" and "constant surface concentration" models

growing processes of the LPE technique are described under bounded solution conditions and the parameters for very thin film growing are obtained.GalnAsP/InP supper lattice structures have been developed using these parameters.5um(Ga

0.40

0.60

0.89

0.11

)/10nm(InP)3 wells structure is accomplished reproducibly under the condition of

(the solution depth)=200μm～500μm

=0.2s and

=570℃.It has been proved that accurate LPE system is capable of growing MQW structure under suitable conditions.

关键词

液相外延量子阱超晶格

Keywords

LPEMQWsuper lattice

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