InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器

陈洪宇; 尚慧明; 戴明金; 王月飞; 李炳生; 胡平安

doi:10.3788/fgxb20194011.1409

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InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器

器件制备及器件物理 | 更新时间：2020-08-12

- InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器
- Controlled Fabrication InSe/Se Van Der Waals Heterojunction for High Responsivity Broadband Photodetectors
- 发光学报 2019年40卷第11期页码：1409-1416
- 作者机构：
  
  1. 哈尔滨工业大学物理学院, 黑龙江哈尔滨 150080
  2. 哈尔滨工业大学化工与化学学院,黑龙江哈尔滨,150080
  3. 哈尔滨工业大学微系统与微结构制造教育部重点实验室,黑龙江哈尔滨,150080
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61874037，61505033）;国家博士后科学基金（2017M621254，2018T110280）;黑龙江省博士后科学基金（LBH-TZ1708）;哈尔滨工业大学微系统与微结构制造教育部重点实验室开放课题（2017KM003）;哈尔滨工业大学创新课题（HIT.NSRIF.2019060）资助项目
- DOI：10.3788/fgxb20194011.1409
  中图分类号： TN304
- 收稿日期：2019-07-12，
  
  修回日期：2019-08-20，
  
  网络出版日期：2019-09-09，
  
  纸质出版日期：2019-11-05
- 稿件说明：
移动端阅览
陈洪宇, 尚慧明, 戴明金等. InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器[J]. 发光学报, 2019,40(11): 1409-1416

CHEN Hong-yu, SHANG Hui-ming, DAI Ming-jin etc. Controlled Fabrication InSe/Se Van Der Waals Heterojunction for High Responsivity Broadband Photodetectors[J]. Chinese Journal of Luminescence, 2019,40(11): 1409-1416
陈洪宇, 尚慧明, 戴明金等. InSe/Se范德瓦尔斯异质结的可控制备及其高响应度广光谱光电探测器[J]. 发光学报, 2019,40(11): 1409-1416 DOI： 10.3788/fgxb20194011.1409.

CHEN Hong-yu, SHANG Hui-ming, DAI Ming-jin etc. Controlled Fabrication InSe/Se Van Der Waals Heterojunction for High Responsivity Broadband Photodetectors[J]. Chinese Journal of Luminescence, 2019,40(11): 1409-1416 DOI： 10.3788/fgxb20194011.1409.

摘要

为了实现紫外-可见波段的高响应度/低成本的广光谱光电探测，我们制备了基于一维p型Se微米线与二维n型InSe纳米片的混维范德瓦尔斯异质结广光谱探测器。得益于Se微米线与二维层状结构InSe纳米片的高结晶质量，该器件在紫外-可见光广光谱范围都具有非常高的响应度，该器件的响应截止边为700 nm。值得指出的是，该器件在-5 V的偏压下，对460 nm的光源响应度可以达到108 mA/W，该数值比原来的Se探测器高了800%。这项研究有利于拓展我们对范德瓦尔斯异质结的认识，也为今后制备高性能的低维光电探测器提供了一种新的途径。

Abstract

To realize photodetection ranging from UV to visible region with high responsivity and low cost

a novel broadband photodetector based on mixed-dimensional van der Waals (vdW) heterojunction comprising a two dimensional (2D) n-type InSe nanosheet and a p-type Se microwire is proposed. Benefiting from the high crystal micrometer-sized Se microwire and two dimensional InSe nanosheet

the device exhibits a high responsivity ranging from UV to visible region with a sharp cutoff at 700 nm. It is worth pointing out that the responsivity of the device could reach up to 108 mA/W at 460 nm at -5 V. The responsivity is 800% larger than that of pristine Se device. These investigations will broaden our fundamental knowledge of vdW heterostructures

which would open additional opportunities for fabricating low dimensional photodetectors with high performance.

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Keywords

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