体布拉格光栅外腔红光半导体激光器实验研究

刘荣战; 薄报学; 么娜; 徐雨萌; 高欣

doi:10.3788/fgxb20194011.1401

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体布拉格光栅外腔红光半导体激光器实验研究

器件制备及器件物理 | 更新时间：2020-08-12

- 体布拉格光栅外腔红光半导体激光器实验研究
- Experimental Research on Volume-Bragg-grating External Cavity Red-light Semiconductor Lasers
- 发光学报 2019年40卷第11期页码：1401-1408
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室, 吉林长春 130022
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61774024）;国家重点研发计划（2017YFB0405100）;吉林省科技发展计划（20170101047JC，20170203014GX，20190302007GX）资助项目
- DOI：10.3788/fgxb20194011.1401
  中图分类号： TN248.4
- 收稿日期：2019-08-09，
  
  修回日期：2019-09-03，
  
  网络出版日期：2019-09-09，
  
  纸质出版日期：2019-11-05
- 稿件说明：
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刘荣战, 薄报学, 么娜等. 体布拉格光栅外腔红光半导体激光器实验研究[J]. 发光学报, 2019,40(11): 1401-1408

LIU Rong-zhan, BO Bao-xue, YAO Na etc. Experimental Research on Volume-Bragg-grating External Cavity Red-light Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2019,40(11): 1401-1408
刘荣战, 薄报学, 么娜等. 体布拉格光栅外腔红光半导体激光器实验研究[J]. 发光学报, 2019,40(11): 1401-1408 DOI： 10.3788/fgxb20194011.1401.

LIU Rong-zhan, BO Bao-xue, YAO Na etc. Experimental Research on Volume-Bragg-grating External Cavity Red-light Semiconductor Lasers[J]. Chinese Journal of Luminescence, 2019,40(11): 1401-1408 DOI： 10.3788/fgxb20194011.1401.

摘要

采用反射型体布拉格光栅作为反馈元件构成红光外腔半导体激光器，对器件输出光特性进行了实验研究。重点研究了体布拉格光栅的位置对红光外腔半导体激光器远场特性的影响。实验结果表明，减小体布拉格光栅与激光器芯片之间的距离可提高激光器的锁模效果，窄化光谱，并且改善慢轴方向的光束发散角。使用衍射效率为20%的体布拉格光栅，可将半导体激光器的输出波长稳定锁定在634 nm附近，光谱线宽压缩至0.7 nm左右，输出功率可达1.06 W。

Abstract

Red-light external cavity semiconductor lasers are constructed by using reflective volume-Bragg-grating(VBG) as a feedback component

experimental research on the output characteristics of the device.The influence of the position of the VBG on the far field characteristics of the red-light external cavity semiconductor lasers is mainly studied. Results show that

reducing the distance between the VBG and the laser chip can improve the mode-locking effect

narrow the spectrum and improve the divergence angle of the slow-axis beam. Using a VBG with a diffraction efficiency of 20%

the output wavelength of the semiconductor lasers can be stably locked around 634 nm

the line width of the output spectral can be compressed to about 0.7 nm

and the output power can reach 1.06 W.

关键词

Keywords

references

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