CH3NH3PbBr3表面修饰对SnO2基光电探测器性能的影响

陈洪宇; 卞万朋; 王月飞; 闫珺; 李林; 王贺彬; 李炳生

doi:10.3788/fgxb20194010.1261

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CH₃NH₃PbBr₃表面修饰对SnO₂基光电探测器性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- CH₃NH₃PbBr₃表面修饰对SnO₂基光电探测器性能的影响
- Effect of Surface Decoration of CH₃NH₃PbBr₃ on Performance of SnO₂-based Photodetector
- 发光学报 2019年40卷第10期页码：1261-1266
- 作者机构：
  
  1. 哈尔滨工业大学物理学院,黑龙江哈尔滨,150001
  2. 哈尔滨师范大学物理与电子工程学院,黑龙江哈尔滨,150025
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61874037，11474076）;微系统与微结构制造教育部重点实验室开放课题（2017KM003）;哈尔滨工业大学创新课题（NSRIF.2019060）资助项目
- DOI：10.3788/fgxb20194010.1261
  中图分类号： TP394.1;TH691.9
- 收稿日期：2019-06-13，
  
  修回日期：2019-07-16，
  
  纸质出版日期：2019-10-05
- 稿件说明：
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陈洪宇, 卞万朋, 王月飞等. CH3NH3PbBr3表面修饰对SnO2基光电探测器性能的影响[J]. 发光学报, 2019,40(10): 1261-1266

CHEN Hong-yu, BIAN Wan-peng, WANG Yue-fei etc. Effect of Surface Decoration of CH3NH3PbBr3 on Performance of SnO2-based Photodetector[J]. Chinese Journal of Luminescence, 2019,40(10): 1261-1266
陈洪宇, 卞万朋, 王月飞等. CH3NH3PbBr3表面修饰对SnO2基光电探测器性能的影响[J]. 发光学报, 2019,40(10): 1261-1266 DOI： 10.3788/fgxb20194010.1261.

CHEN Hong-yu, BIAN Wan-peng, WANG Yue-fei etc. Effect of Surface Decoration of CH3NH3PbBr3 on Performance of SnO2-based Photodetector[J]. Chinese Journal of Luminescence, 2019,40(10): 1261-1266 DOI： 10.3788/fgxb20194010.1261.

摘要

SnO

基紫外探测器具有较高的光响应度，但由于材料存在持续光电导效应，其响应时间较长，限制了其在光电探测领域的应用。为此，我们研究了表面修饰对SnO

基光电探测器件的性能影响。采用化学气相沉积的方法制备了高结晶质量的SnO

微米线，并在此基础上制备了基于单根SnO

微米线的光电探测器。同时制备了高质量的钙钛矿CH

PbBr

材料，并与SnO

微米线结合制备出经过修饰的SnO

基器件。两种器件在紫外波段都呈现出明显的光响应，响应峰值位于250 nm处。相比单根SnO

微米线器件，经过修饰后的SnO

微米线探测器的响应度提高了10倍，响应时间由单根SnO

微米线器件的几百乃至上千秒缩短为0.9 s。这一研究结果说明我们所采用的方法非常有望应用到高性能SnO

光电探测器的制备中。

Abstract

UV photodetectors based on SnO

material usually have high optical responsivity. However

due to the continuous photoconductivity

its response time is usually very long

which limits its application in the field of photodetection. Here we investigated the effect of surface modification on the performance of SnO

-based photodetector. The high crystal quality SnO

microwires were prepared by chemical vapor deposition and photodetector based on single SnO

microwires were also fabricated. At the same time

organic perovskite MAPbBr

with high quality was also prepared using solution method and the devices based on SnO

decorated with MAPbBr

were fabricated in the following. Both devices exhibited significant response in the UV region with a peak at 250 nm. Compared to the device made by a single SnO

microwire

the responsivity of the device decorated by CH

PbBr

showed as much as ten times higher and the response time reduced from tens or even hundreds of seconds to 0.9 s. The experiment results indicate that the method we used is very promising for the preparation of high performance SnO

photodetectors.

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