两步氧化法制备&beta;-Ga2O3薄膜

李赜明; 余烨; 焦腾; 胡大强; 董鑫; 李万程; 张源涛; 吕元杰; 冯志红; 张宝林

doi:10.3788/fgxb20194010.1247

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两步氧化法制备β-Ga₂O₃薄膜

材料合成及性能 | 更新时间：2020-08-12

- 两步氧化法制备β-Ga₂O₃薄膜
- Preparation of β-Ga₂O₃ Films by Two-step Thermal Oxidation
- 发光学报 2019年40卷第10期页码：1247-1253
- 作者机构：
  
  1. 吉林大学电子科学与工程学院集成光电子学国家重点联合实验室,吉林长春,130012
  2. 河北半导体研究所专用集成电路国家重点实验室,河北石家庄,050051
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61774072，61734001，61674068）;吉林省科技发展计划（20170204045GX）;国家重点研发计划（2016YFB0401801，2016YFB0400103）资助项目
- DOI：10.3788/fgxb20194010.1247
  中图分类号： O482.31
- 收稿日期：2019-05-11，
  
  修回日期：2019-08-06，
  
  网络出版日期：2019-06-04，
  
  纸质出版日期：2019-10-05
- 稿件说明：
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李赜明, 余烨, 焦腾等. 两步氧化法制备β-Ga2O3薄膜[J]. 发光学报, 2019,40(10): 1247-1253

LI Ze-ming, YU Ye, JIAO Teng etc. Preparation of β-Ga2O3 Films by Two-step Thermal Oxidation[J]. Chinese Journal of Luminescence, 2019,40(10): 1247-1253
李赜明, 余烨, 焦腾等. 两步氧化法制备β-Ga2O3薄膜[J]. 发光学报, 2019,40(10): 1247-1253 DOI： 10.3788/fgxb20194010.1247.

LI Ze-ming, YU Ye, JIAO Teng etc. Preparation of β-Ga2O3 Films by Two-step Thermal Oxidation[J]. Chinese Journal of Luminescence, 2019,40(10): 1247-1253 DOI： 10.3788/fgxb20194010.1247.

摘要

为获得高质量的-Ga

薄膜，对传统的GaN薄膜高温氧化方法进行了优化。我们通过对GaN薄膜分别进行一步或两步高温氧化的方法制备了-Ga

薄膜，并通过X射线衍射、场发射扫描电子显微镜、拉曼光谱等对制备的样品进行了测试、对比与分析。结果表明，950℃下GaN薄膜无法完全氧化，而直接1 150℃氧化得到的样品并没有明显的晶向。相比之下，通过两步氧化法，GaN薄膜被完全氧化，且得到的-Ga

薄膜具有明显的沿

方向的晶向，样品表面显示出明显的纳米线结构。最佳的氧化时间为在950℃下氧化3 h之后在1 150℃下氧化1 h，此时得到样品的纳米线结构最明显，其纳米线的直径约为30~40 nm。拉曼光谱测试证实了该条件下获得的样品具有较高的晶体质量。通过分析不同样品结构以及形貌特性，我们发现不同温度下的不同氧化模式是导致该结果的主要原因。

Abstract

To obtain -Ga

films with high quality

we optimized conventional GaN high temperature oxidation. The -Ga

thin films were prepared from GaN thin films by one-step and two-step high temperature oxidation

respectively. The prepared samples were characterized by X-ray diffraction (XRD)

filed emission scanning electron microscopy (FESEM) and Raman spectroscopy. The results showed that the GaN films could not be completely oxidized at 950℃

and the sample obtained directly at 1 150℃ had no obvious crystal orientation. In contrast

the GaN films were completely oxidized by two-step oxidation method

and the obtained -Ga

films had obvious crystal orientation along the direction of

. The surfaces of the samples obtained by two-step oxidation showed nanowire structures. The optimized oxidation time was oxidation at 950℃ for 3 h followed by oxidation at 1 150℃ for 1 h

the obtained sample had most obvious nanowire structures

and the diameters of the nanowires were about 30-40 nm. Raman spectroscopy confirmed that the sample obtained under this condition had high crystalline quality. By analyzing the structure and morphology properties of different samples

we found that different oxidation modes at different temperatures were the main causes of these results.

关键词

Keywords

references

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退火对Ga₂O₃薄膜特性的影响

两步氧化法制备β-Ga2O3薄膜

Preparation of β-Ga2O3 Films by Two-step Thermal Oxidation

DOI：10.3788/fgxb20194010.1247

摘要

Abstract

关键词

Keywords

references

两步氧化法制备β-Ga₂O₃薄膜

Preparation of β-Ga₂O₃ Films by Two-step Thermal Oxidation