&delta;-掺杂受主的扩散对GaAs/AlAs量子阱子带的影响

郑卫民; 黄海北; 李素梅; 丛伟艳; 王爱芳; 李斌; 宋迎新

doi:10.3788/fgxb20194010.1240

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δ-掺杂受主的扩散对GaAs/AlAs量子阱子带的影响

材料合成及性能 | 更新时间：2020-08-12

- δ-掺杂受主的扩散对GaAs/AlAs量子阱子带的影响
- Effect of δ-doped Acceptor Diffusion on Subbands of GaAs/AlAs Quantum Wells
- 发光学报 2019年40卷第10期页码：1240-1246
- 作者机构：
  
  1. 山东大学(威海) 空间科学与物理学院,山东威海,264209
  2. 墨尔本大学化学院维多利亚,澳大利亚,3010
  3. 山东大学(威海) 信息工程学院,山东威海,264209
  4. 中国科学院上海技术物理研究所上海,200083
  5. 济南市半导体元件实验所,山东济南,250014
- 作者简介：
- 基金信息：
  
  山东省自然科学基金（ZR2017MF018）;国家自然科学基金（61675223）资助项目
- DOI：10.3788/fgxb20194010.1240
  中图分类号： O471.5
- 收稿日期：2019-04-22，
  
  修回日期：2019-05-30，
  
  网络出版日期：2019-06-04，
  
  纸质出版日期：2019-10-05
- 稿件说明：
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郑卫民, 黄海北, 李素梅等. δ-掺杂受主的扩散对GaAs/AlAs量子阱子带的影响[J]. 发光学报, 2019,40(10): 1240-1246

ZHENG Wei-min, HUANG Hai-bei, LI Su-mei etc. Effect of δ-doped Acceptor Diffusion on Subbands of GaAs/AlAs Quantum Wells[J]. Chinese Journal of Luminescence, 2019,40(10): 1240-1246
郑卫民, 黄海北, 李素梅等. δ-掺杂受主的扩散对GaAs/AlAs量子阱子带的影响[J]. 发光学报, 2019,40(10): 1240-1246 DOI： 10.3788/fgxb20194010.1240.

ZHENG Wei-min, HUANG Hai-bei, LI Su-mei etc. Effect of δ-doped Acceptor Diffusion on Subbands of GaAs/AlAs Quantum Wells[J]. Chinese Journal of Luminescence, 2019,40(10): 1240-1246 DOI： 10.3788/fgxb20194010.1240.

摘要

在15 nm GaAs/5 nm AlAs单量子阱的GaAs阱层中间，分别进行不同浓度剂量的铍受主的-掺杂。铍受主在量子阱层中的扩散浓度分布，由扩散方程数值解出。高温下扩散在GaAs阱层中的Be受主将发生电离，成为带负电荷的受主离子，同时也向量子阱价带的子带中引入空穴。带负电荷的扩散受主离子和价带子带中的空穴，它们都是带电粒子在GaAs阱层中按库伦定律激发电场。相比较而言，对于无掺杂同结构量子阱，在空穴的薛定谔中增加了一个额外的微扰势，从而使无掺杂的量子阱价带的子带有所改变。在有效质量和包络函数近似下，通过循环迭代方法，数值求解了既满足薛定谔方程又满足泊松方程的空穴波函数，找出了自洽、收敛的空穴子带的能量本征值。计算发现考虑到这种额外微扰势，重空穴基态子带hh的能量有一个电子伏特变化，并且随着掺杂受主剂量的增加，重空穴基态子带hh向着价带顶红移，计算结果与实验测量符合得很好。

Abstract

A GaAs/AlAs quantum well

with a 15 nm-thick GaAs well surrounded by a 5 nm-thick AlAs barrier

is -doped with Be acceptors of various doping levels at the well center. The ionized acceptor diffused profiles within the quantum well are solved by the diffusion equation. The additional potential

due to both the ionized acceptor diffused profile and hole distribution in valence-band subbands

is incorporated into the quantum well potential. The self-consistent solution and converged hole energy eigenvalue for the Schrdinger's and Poisson's equations are looked for by an iterative method. It is found through calculations that the energy of the heavy-hole ground state hh has changed by about 1 meV

while it is red-shifted towards the valence-band top with increasing Be acceptor doping concentrations. The calculated results are in a good agreement with experimental results.

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δ-掺杂受主的扩散对GaAs/AlAs量子阱子带的影响

Effect of δ-doped Acceptor Diffusion on Subbands of GaAs/AlAs Quantum Wells

DOI：10.3788/fgxb20194010.1240

摘要

Abstract

关键词

Keywords

references