全息光刻制备808 nm腔面光栅半导体激光器

王岳; 王勇; 李占国; 尤明慧

doi:10.3788/fgxb20194009.1130

您当前的位置：

首页 >

文章列表页 >

全息光刻制备808 nm腔面光栅半导体激光器

器件制备及器件物理 | 更新时间：2020-08-12

- 全息光刻制备808 nm腔面光栅半导体激光器
- 808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography
- 发光学报 2019年40卷第9期页码：1130-1135
- 作者机构：
  
  1. 长春理工大学理学院, 吉林长春 130022
  2. 吉林农业大学信息技术学院, 吉林长春 130018
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61774025）;吉林省科技厅项目（20140520139JH，20170520157JH，20152420170414016GH，2015174）资助
- DOI：10.3788/fgxb20194009.1130
  中图分类号： TN248.4
- 收稿日期：2019-02-13，
  
  修回日期：2019-03-22，
  
  网络出版日期：2019-03-26，
  
  纸质出版日期：2019-09-05
- 稿件说明：
移动端阅览
王岳, 王勇, 李占国等. 全息光刻制备808 nm腔面光栅半导体激光器[J]. 发光学报, 2019,40(9): 1130-1135

WANG Yue, WANG Yong, LI Zhan-guo etc. 808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography[J]. Chinese Journal of Luminescence, 2019,40(9): 1130-1135
王岳, 王勇, 李占国等. 全息光刻制备808 nm腔面光栅半导体激光器[J]. 发光学报, 2019,40(9): 1130-1135 DOI： 10.3788/fgxb20194009.1130.

WANG Yue, WANG Yong, LI Zhan-guo etc. 808 nm Cavity Surface Grating Semiconductor Laser by Holographic Lithography[J]. Chinese Journal of Luminescence, 2019,40(9): 1130-1135 DOI： 10.3788/fgxb20194009.1130.

摘要

利用全息光刻开展了808 nm腔面光栅半导体激光器腔面膜系制备，制备与表征了单管芯器件，单管芯器件条宽100 m，腔长2 mm，输出中心波长807.32 nm，光谱半宽为0.36 nm，15~45℃温度范围内波长随温度的漂移系数为0.072 nm/℃，室温单管芯最大连续输出功率达到2.8 W，阈值电流为0.49 A，斜率效率为1.05 W/A。测试结果表明808 nm腔面光栅半导体激光器实现了单纵模输出。

Abstract

The laser holography photolithography technology was designed

the optical path of holography lithography system was calculated and built based on the designed parameters of cavity grating

and the holography lithography conditions were optimized to fabricate the mask patterns of cavity grating. Based on the design of facet coating films

the facet coating process was investigated by precisely controlling the thickness and uniformity of films to realize the transmissivity

reflectivity

and bandwidth satisfied with the single longitudinal mode output of 808 nm facet grating LD. The single chip device of 808 nm facet grating LD was fabricated and characterized

with width of 100 m and length of 2 mm. High performance was achieved with central wavelength of 807.32 nm

FWHM of 0.36 nm

wavelength drift coefficient with temperature variation(15~45℃) of 0.072 nm/℃

maximum output power of 2.8 W

threshold of 0.49 A

and slop efficient of 1.05 W/A.

关键词

Keywords

references

WENZEL H,KLEHR A,BRAUN M,et al.. Design and realization of high-power DFB lasers[C]. Proceedings of SPIE 5594,Physics and Applications of Optoelectronic Devices,Philadelphia,Pennsylvania,United States, 2004:110-123.

VOLODIN B L,DOLGY S V,MELNIK E D,et al.. Wavelength stabilization and spectrum narrowing of high-power multimode laser diodes and arrays by use of volume Bragg gratings[J]. Opt. Lett., 2004,29(16):1891-1893.

KLEHR A,BUGGE F,ERBERT G,et al.. High power broad area 808 nm DFB lasers for pumping solid state lasers[C]. Proceedings of SPIE 6133,Novel In-plane Semiconductor Lasers V,San Jose,California,United States, 2006:96-105.

KUDO K,YASHIKI K,SASAKI T,et al.. 1.55-m wavelength-selectable microarray DFB-LD's with monolithically integrated MMI combiner,SOA,and EA-modulator[J]. IEEE Photonics Technol. Lett., 2000,12(3):242-244.

STREIFER W,SCIFRES D,BURNHAM R. Coupling coefficients for distributed feedback single-and double-heterostructure diode lasers[J]. IEEE J. Quantum Electron., 1975,11(11):867-873.

刘丹丹,王勇,叶镇,等. 全息光刻制备808 nm分布反馈半导体激光器的光栅[J]. 中国激光, 2015,42(2):0202008-1-5. LIU D D,WANG Y,YE Z,et al.. Grating fabrication of 808 nm distributed feedback semiconductor laser by holographic photolithography[J]. Chin. J. Lasers, 2015,42(2):0202008-1-5. (in Chinese)

叶镇,王勇,高占琦,等. 基于全息光刻系统制备528 nm周期孔阵图形[J]. 中国激光, 2015,42(8):0809003-1-5. YE Z,WANG Y,GAO Z Q,et al.. Preparation of 528 nm periodic hole array based on holographic lithography system[J]. Chin. J. Lasers, 2015,42(8):0809003-1-5. (in Chinese)

KOGELNIK H,SHANK C V. Coupled-wave theory of distributed feedback lasers[J]. J. Appl. Phys.,1972,43(5):2327-2335.

GOUREVITCH A,VENUS G,SMIRNOV V,et al.. Efficient pumping of Rb vapor by high-power volume Bragg diode laser[J]. Opt. Lett., 2007,32(17):2611-2613.

辛国锋,程灿,瞿荣辉,等. 体布拉格光栅外腔半导体激光器光谱特性研究[J]. 光学学报, 2007,27(10):1821-1826. XIN G F,CHENG C,QU R H,et al.. Study of spectral characteristics of external-cavity semiconductor laser a volume Bragg grating[J]. Acta Opt. Sinica, 2007,27(10):1821-1826. (in Chinese)

叶淑娟,秦莉,戚晓东,等. 二阶光栅分布反馈半导体激光器的出光特性[J]. 中国激光, 2010,37(9):2371-2375. YE S J,QIN L,QI X D,et al.. Emission characteristics of second-order distributed feedback semiconductor lasers[J]. Chin. J. Lasers, 2010,37(9):2371-2375. (in Chinese)

仕均秀,秦莉,叶淑娟,等. 具有表面二阶金属光栅的927 nm分布反馈半导体激光器的研制[J]. 光电子激光, 2011,22(10):1488-1491. SHI J X,QIN L,YE S J,et al.. A 927 nm distributed feedback laser with surface second-order metal grating[J]. J. Optoelectron. Laser, 2011,22(10):1488-1491. (in Chinese)

浏览量

202

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

高功率1 150 nm垂直外腔面发射半导体激光器

基于束腰劈裂偏振合束高亮度窄线宽半导体激光器

970 nm高功率光栅外腔可调谐半导体激光器

低温808 nm高效率半导体激光器

侧向微结构宽脊波导分布反馈1.06 μm半导体激光器