InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响

余浩; 郑畅达; 丁杰; 莫春兰; 潘拴; 刘军林; 江风益

doi:10.3788/fgxb20194009.1108

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InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响

器件制备及器件物理 | 更新时间：2020-08-12

- InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响
- High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer
- 发光学报 2019年40卷第9期页码：1108-1114
- 作者机构：
  
  南昌大学国家硅基LED工程技术研究中心, 江西南昌 330096
- 作者简介：
- 基金信息：
  
  国家重点研发计划（2016YFB040060，2016YFB0400601）;国家自然科学基金重点项目（61334001）;江西省发展计划（20165ABC28007，20182ABC28003）资助项目
- DOI：10.3788/fgxb20194009.1108
  中图分类号： 0484.4;O482.31
- 收稿日期：2019-02-28，
  
  修回日期：2019-04-02，
  
  网络出版日期：2019-03-14，
  
  纸质出版日期：2019-09-05
- 稿件说明：
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余浩, 郑畅达, 丁杰等. InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响[J]. 发光学报, 2019,40(9): 1108-1114

YU Hao, ZHENG Chang-da, DING Jie etc. High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer[J]. Chinese Journal of Luminescence, 2019,40(9): 1108-1114
余浩, 郑畅达, 丁杰等. InGaN绿光LED中p-AlGaN插入层对发光效率提升的影响[J]. 发光学报, 2019,40(9): 1108-1114 DOI： 10.3788/fgxb20194009.1108.

YU Hao, ZHENG Chang-da, DING Jie etc. High Efficiency InGaN Green LEDs with Additional Optimized p-AlGaN Interlayer[J]. Chinese Journal of Luminescence, 2019,40(9): 1108-1114 DOI： 10.3788/fgxb20194009.1108.

摘要

基于含有V坑结构的Si（111）衬底InGaN/GaN绿光LED，我们在传统p-AlGaN电子阻挡层之后优化生长一层25 nm的低掺镁p-AlGaN插入层，并获得明显的效率提升。在35 A/cm

的电流密度下，主波长为520 nm的LED外量子效率和光功率分别达到43.6%和362.3 mW，这是截至目前报道的最高记录。通过分析表明，其潜在的物理机制归结于p-AlGaN插入层能够提高空穴从V坑注入的效率。本文提供了一种有效提升发光效率的方法，尤其适合于含有V坑结构的InGaN/GaN LED。

Abstract

Significantly improved external quantum efficiency was achieved by growing an additional optimized 25 nm low-doped p-AlGaN interlayer(IL) after the conventional p-AlGaN electron blocking layer for InGaN/GaN green LEDs with V-pits on Si(111) substrate. At 35 A/cm

current density

external quantum efficiency(EQE) and output power reach up to 43.6% and 362.3 mW with the dominant wavelength of 520 nm. This is a new record for green InGaN-based LEDs. The underlying physical mechanism is attributed to the enhanced holes injection efficiency

via

V-shaped pits assisted by the optimized p-AlGaN interlayer. This paper provides an effective approach to improve efficiency especially suitable for those InGaN/GaN LED with V-shape pits.

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references

CRAWFORD M H. LEDs for solid-state lighting:performance challenges and recent advances[J]. IEEE J. Sel. Top. Quantum Electron., 2009, 15(4):1028-1040.

NAKAMURA S,SENOH M,IWASA N,et al.. High-brightness InGaN blue,green and yellow light-emitting diodes with quantum well structures[J]. Jpn. J. Appl. Phys., 1995,34(7A):L797-L799.

KIM M H,SCHUBERT M F,DAI Q,et al.. Origin of efficiency droop in GaN-based light-emitting diodes[J]. Appl. Phys. Lett., 2007,91(18):183507-1-3.

VAMPOLA K J,IZA M,KELLER S,et al.. Measurement of electron overflow in 450 nm InGaN light-emitting diode structures[J]. Appl. Phys. Lett., 2009,94(6):061116-1-3.

SHEN Y C,MUELLRE G O,WATANABE S,et al.. Auger recombination in InGaN measured by photoluminescence[J]. Appl. Phys. Lett., 2007,91(14):141101-1-3.

YANG Y,CAO X A,YAN C H. Investigation of the nonthermal mechanism of efficiency rolloff in InGaN light-emitting diodes[J]. IEEE Trans. Electron Dev., 2008,55(7):1771-1775.

NI X F,QIAN F,SHIMADA R,et al.. Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells[J]. Appl. Phys. Lett., 2008,93(17):171113-1-3.

WANG C H,KE C C,LEE C Y,et al.. Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer[J]. Appl. Phys. Lett., 2010,97(26):261103-1-3.

ZHANG Z H,JU Z G,LIU W,et al.. Improving hole injection efficiency by manipulating the hole transport mechanism through p-type electron blocking layer engineering[J]. Opt. Lett., 2014,39(8):2483-2486.

SU C Y,TU C G,LIU W H,et al.. Enhancing the hole-injection efficiency of a light-emitting diode by increasing Mg doping in the p-AlGaN electron-blocking layer[J]. IEEE Trans. Electron Dev., 2017,64(8):3226-3233.

HANGLEITER A,HITZEL F,NETZEL C,et al.. Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency[J]. Phys. Rev. Lett., 2005,95(12):127402-1-4.

QUAN Z J,WANG L,ZHENG C D,et al.. Roles of V-shaped pits on the improvement of quantum efficiency in InGaN/GaN multiple quantum well light-emitting diodes[J]. J. Appl. Phys., 2014,116(18):183107-1-5.

WU X M,LIU J L,QUAN Z J,et al.. Electroluminescence from the sidewall quantum wells in the V-shaped pits of InGaN light emitting diodes[J]. Appl. Phys. Lett., 2014,104(22):221101-1-5.

YOO Y S,NA J H,SON S J,et al.. Effective suppression of efficiency droop in GaN-based light-emitting diodes:role of significant reduction of carrier density and built-in field[J]. Sci. Rep., 2016,6:34586-1-9.

LV Q J,LIU J L,MO C L,et al.. Realization of highly efficient InGaN green LEDs with sandwich-like multiple quantum well structure:role of enhanced interwell carrier transport[J]. ACS Photon., 2019,6(1):130-138.

SHEN Y C,WIERER J J,KRAMES M R,et al.. Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes[J]. Appl. Phys. Lett., 2003,82(14):2221-2223.

NETZEL C,BREMERS H,HOFFMANN L,et al.. Emission and recombination characteristics of Ga1-xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits[J]. Phys. Rev. B, 2007,76(15):155322.

LI Y F,YUN F,SU X L,et al.. Deep hole injection assisted by large V-shape pits in InGaN/GaN multiple-quantum-wells blue light-emitting diodes[J]. J. Appl. Phys., 2014,116(12):123101-1-6.

KIM K S,HAN D P,KIM H S,et al.. Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes[J]. Appl. Phys. Lett., 2014,104(9):091110.

GTZ W,JOHNSON N M,WALKER J,et al.. Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor deposition[J]. Appl. Phys. Lett., 1996,68(5):667-669.

SCHUBERT E F. Light-emitting Diodes[M]. 2nd ed. New York:Cambridge University Press, 2006.

QI W J,ZHANG J L,MO C L,et al.. Effects of thickness ratio of InGaN to GaN in superlattice strain relief layer on the optoelectrical properties of InGaN-based green LEDs grown on Si substrates[J]. J. Appl. Phys., 2017,122(8):084504.

TAO X X,LIU J L,ZHANG J L,et al.. Performance enhancement of yellow InGaN-based multiple-quantum-well light-emitting diodes grown on Si substrates by optimizing the InGaN/GaN superlattice interlayer[J]. Opt. Mater. Express, 2018,8(5):1221-1230.

NIUN H,WANG H B,LIU J P,et al.. Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction[J]. Solid-State Electron., 2007,51(6):860-864.

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