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N掺杂MgZnO薄膜的光电性质
Photoelectric Properties of N Doped MgZnO Thin Films
- 发光学报 2019年40卷第8期 页码：956-960
- 作者机构：
1. 吉林大学 物理学院,吉林 长春,130021
2. 中国科学院长春光学精密机械与物理研究所 发光学及应用国家重点实验室,吉林 长春,130033
3. 东北石油大学 电子科学学院,黑龙江 大庆,163318
- 作者简介：
- 基金信息：东北石油大学科研启动经费资助项目（rc201736）();东北石油大学青年基金（NEPUBS2014-04）资助项目()
DOI：10.3788/fgxb20194008.0956
中图分类号： 484.4收稿日期：2018-09-07，
修回日期：2018-10-24，
网络出版日期：2018-11-08，
纸质出版日期：2019-08-05
- 稿件说明：
移动端阅览
赵鹏程, 张振中, 姚斌等. N掺杂MgZnO薄膜的光电性质[J]. 发光学报, 2019,40(8): 956-960
ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin etc. Photoelectric Properties of N Doped MgZnO Thin Films[J]. Chinese Journal of Luminescence, 2019,40(8): 956-960
赵鹏程, 张振中, 姚斌等. N掺杂MgZnO薄膜的光电性质[J]. 发光学报, 2019,40(8): 956-960 DOI： 10.3788/fgxb20194008.0956.
ZHAO Peng-cheng, ZHANG Zhen-zhong, YAO Bin etc. Photoelectric Properties of N Doped MgZnO Thin Films[J]. Chinese Journal of Luminescence, 2019,40(8): 956-960 DOI： 10.3788/fgxb20194008.0956.
摘要
ZnO是优异的紫外发光和激光材料，氮被认为是p型ZnO和MgZnO的理想受主掺杂剂，但在较低生长温度下氮的掺入会显著破坏晶格完整性，使氧化锌的载流子迁移率进一步下降。为了研究N的掺入对MgZnO薄膜的影响，利用分子束外延设备在蓝宝石衬底上生长了N掺杂的ZnO和MgZnO薄膜。实验结果表明，在其他条件完全相同的情况下，当Mg源温度为245℃和255℃时，载流子迁移率会显著提高，这一现象被归结为Mg-N成键抑制了氧位上N-N对的形成，缓解了晶格的扭曲。同时当Mg源温度为275℃时，能够使N掺杂ZnO薄膜中的施主浓度降低一个量级，有利于实现p型掺杂。
Abstract
ZnO is an excellent UV light-emitting and lasing materials. Nitrogen is considered to be the ideal acceptor dopant for p-type ZnO and MgZnO. However
the lattice integrity of the nitrogen-doped samples grown at the lower growth temperature is remarkably influenced
which results in a further decrease in the carrier mobility of the zinc oxide. In order to study the effect of N doped MgZnO films
N-doped ZnO and MgZnO thin films were grown on sapphire substrate by molecular beam epitaxy. Comparing the difference between N doped MgZnO and ZnO
the experimental results show that the carrier mobility increased significantly when the Mg source temperature was 245℃ and 255℃
which is attributed to the fact that Mg-N bonding alleviates the formation of N-N pairs on the oxygen sites and relieves the lattice distortion. At the same time
the donor concentration in N-doped ZnO thin films can be reduced by one order of magnitude when the Mg source temperature is 275℃
which is advantageous for p-type doping.
关键词
Keywords
references
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