合成及薄膜制备条件对CsPbBr3全无机钙钛矿量子点特性的影响

马雪; 庄仕伟; 韩丽锦; 胡大强; 张源涛; 董鑫; 吴国光; 张宝林

doi:10.3788/fgxb20194008.0949

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合成及薄膜制备条件对CsPbBr₃全无机钙钛矿量子点特性的影响

材料合成及性能 | 更新时间：2020-08-12

- 合成及薄膜制备条件对CsPbBr₃全无机钙钛矿量子点特性的影响
- Effects of Synthesis and Film Preparation Conditions on Properties of CsPbBr₃ Inorganic Perovskite Quantum Dots
- 发光学报 2019年40卷第8期页码：949-955
- 作者机构：
  
  集成光电子学国家重点实验室, 吉林大学电子科学与工程学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61574069）资助项目()
- DOI：10.3788/fgxb20194008.0949
  中图分类号： TP394.1;TH691.9
- 收稿日期：2018-08-02，
  
  修回日期：2018-09-13，
  
  网络出版日期：2018-09-26，
  
  纸质出版日期：2019-08-05
- 稿件说明：
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马雪, 庄仕伟, 韩丽锦等. 合成及薄膜制备条件对CsPbBr3全无机钙钛矿量子点特性的影响[J]. 发光学报, 2019,40(8): 949-955

MA Xue, ZHUANG Shi-wei, HAN Li-jin etc. Effects of Synthesis and Film Preparation Conditions on Properties of CsPbBr3 Inorganic Perovskite Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(8): 949-955
马雪, 庄仕伟, 韩丽锦等. 合成及薄膜制备条件对CsPbBr3全无机钙钛矿量子点特性的影响[J]. 发光学报, 2019,40(8): 949-955 DOI： 10.3788/fgxb20194008.0949.

MA Xue, ZHUANG Shi-wei, HAN Li-jin etc. Effects of Synthesis and Film Preparation Conditions on Properties of CsPbBr3 Inorganic Perovskite Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(8): 949-955 DOI： 10.3788/fgxb20194008.0949.

摘要

通过对不同合成条件与制备参数的量子点及其薄膜进行一系列特性表征，实现铯铅溴量子点（CsPbBr

）合成条件和薄膜制备参数的优化。利用热注入的方法，研究了反应温度与反应时间对CsPbBr

量子点特性的影响。设计并获得了不同合成条件下的CsPbBr

量子点样品，并对所有样品进行了特性表征。随后将所有CsPbBr

量子点样品制备成薄膜，探究其薄膜的光致发光特性。反应温度为180℃、反应时间为5 s时所合成的量子点尺寸最小，为9 nm；旋涂速度为3 000 r/min、退火温度为80℃、退火时间为10 min时，所制备的薄膜光致发光强度最大。得到了相对最优的CsPbBr

量子点合成条件与CsPbBr

量子点薄膜制备条件。

Abstract

By a series of characterization of quantum dots and their films for different synthesis conditions and preparation parameters

the synthesis conditions of cesium lead bromide quantum dots and the quantum dots film preparation parameters are optimized. The effects of reaction temperature and reaction time on the properties of CsPbBr

perovskite quantum dots were studied by thermal injection. The quantum dot samples of perovskite under different synthetic conditions were obtained and characterized. Then all CsPbBr

quantum dot samples were prepared into thin films to explore its photoluminescence properties. When the reaction temperature is 180℃

the reaction time is 5 s

the quantum dot size is 9 nm

reaching the minimum value. With the spin speed of 3 000 r/min

the annealing temperature of 80℃ and the annealing time of 10 min

the CsPbBr

quantum dots film has the strongest photoluminescence intensity. The optimum synthesis conditions of CsPbBr

quantum dots and the CsPbBr

quantum dots film preparation conditions were obtained.

关键词

Keywords

references

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