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InN量子点的液滴外延及物性表征
Droplet Epitaxy and Physical Characterization of InN Quantum Dots
- 发光学报 2019年40卷第2期 页码：171-176
- 作者机构：
1. 长春理工大学 高功率半导体激光国家重点实验室, 吉林 长春 130022
2. 海南师范大学 物理与电子工程学院, 海南 海口 571158
- 作者简介：
[ "陈启明(1990-),男,吉林四平人,博士,2018年于长春理工大学获得博士学位,主要从事Ⅲ族氮化物的分子束外延生长的研究。E-mail:chenqimingpku@163.com" ]
[ "晏长岭(1971-),男,河北保定人,博士,研究员,博士生导师,2000年于中国科学院长春光学精密机械与物理研究所获得博士学位,主要从事半导体光电子学与激光技术的研究。E-mail:changling_yan@126.com" ]
[ "曲轶(1969-),男,吉林长春人,博士,研究员,博士生导师,2002年于吉林大学获得博士学位,主要从事半导体激光器及模块、半导体量子点单光子源、半导体激光近炸引信、半导体激光雷达系统等方面的研究。E-mail:quyi@cust.edu.cn" ]
- 基金信息：国家自然科学基金（U1330136，61376045）;长春科学与技术计划项目（13KG30）;吉林省科学技术厅项目（20160101254JC）;长春理工大学项目（XJLG-2015-10）资助
DOI：10.3788/fgxb20194002.0171
中图分类号： O472+.1;O472+.3收稿日期：2018-04-17，
修回日期：2018-09-28，
网络出版日期：2018-08-20，
纸质出版日期：2019-02-05
- 稿件说明：
移动端阅览
陈启明, 晏长岭, 曲轶. InN量子点的液滴外延及物性表征[J]. 发光学报, 2019,40(2): 171-176
CHEN Qi-ming, YAN Chang-ling, QU Yi. Droplet Epitaxy and Physical Characterization of InN Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(2): 171-176
陈启明, 晏长岭, 曲轶. InN量子点的液滴外延及物性表征[J]. 发光学报, 2019,40(2): 171-176 DOI： 10.3788/fgxb20194002.0171.
CHEN Qi-ming, YAN Chang-ling, QU Yi. Droplet Epitaxy and Physical Characterization of InN Quantum Dots[J]. Chinese Journal of Luminescence, 2019,40(2): 171-176 DOI： 10.3788/fgxb20194002.0171.
摘要
由于1.55 m波段广泛应用于通信领域，为了探索不同生长温度对InN量子点的形貌影响，并且实现自组装InN量子点在1.55 m通信波段的发光，对InN量子点的液滴外延及物性进行了相关研究。首先利用射频等离子体辅助分子束外延（PA-MBE）技术在GaN模板上，采用液滴外延方法在3种温度下生长了InN量子点结构。生长过程中靠反射高能电子衍射（RHEED）对样品进行原位监控。原子力显微镜（AFM）表征结果表明随着生长温度升高，量子点尺寸变大，密度减小。在生长温度350℃和400℃下，观测到了量子点；当温度高于450℃时，未观测到InN量子点。当生长温度为400℃时，量子点形貌最好，密度为610
8
/cm
2
，对400℃下生长的InN量子点进行了变温PL测试，成功得到InN量子点在1.55 m波段附近的光致发光，并且随着测试温度的升高，量子点的发光峰位发生了先红移后蓝移最后又红移的S型曲线变化，这种量子点有望在未来应用于量子通信领域。
Abstract
Because the 1.55 m band is widely used in the communication field
in order to explore the influence of different growth temperatures on the morphology of InN quantum dots(QDs)
and to realize the 1.55 m luminescence of self-assembled InN QDs
the droplet epitaxy and physical properties of InN QDs were investigated. Firstly
the InN QDs structure was grown at three different temperatures by droplet epitaxy on a GaN template using radio frequency plasma-assisted molecular beam epitaxy(PA-MBE) technique. During the growth process
the sample was
in-situ
detected by RHEED. The AFM results show that the size of quantum dots increases and the density decreases with the growth temperature increasing. The InN QDs were observed at the growth temperatures of 350℃ and 400℃. No InN quantum dots were observed at temperature 450℃. When the growth temperature is 400℃
the QDs have the best morphology and the QDs density is 610
8
/cm
2
. The temperature dependent PL was measured on the sample grown at 400℃
and the 1.55 m emission from the InN QDs is successfully obtained. With the increase of measured temperature
the emission peaks of quantum dots have a S-curve change:from a red shift to a blue shift and last a red shift. These InN QDs are expected to be used in the quantum communication field in the future.
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references
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