退火温度对旋涂法制备SnO2薄膜性能的影响

张旭; 刘贤哲; 袁炜健; 邓宇熹; 张啸尘; 王爽; 王佳良; 宁洪龙; 姚日晖; 彭俊彪

doi:10.3788/fgxb20194002.0164

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退火温度对旋涂法制备SnO₂薄膜性能的影响

材料合成及性能 | 更新时间：2020-08-12

- 退火温度对旋涂法制备SnO₂薄膜性能的影响
- Effect of Annealing Temperature on Properties of SnO₂ Thin Films Prepared by Spin Coating
- 发光学报 2019年40卷第2期页码：164-170
- 作者机构：
  
  华南理工大学材料科学与工程学院, 高分子光电材料与器件研究所, 发光材料与器件国家重点实验室, 广东广州 510640
- 作者简介：
- 基金信息：
  
  国家重点研发计划（2016YFB0401504）;国家自然科学基金（51771074，51521002，U1601651）;国家重点基础研究发展规划项目计划（973计划）（2015CB655004）;广东省自然科学基金（2016A030313459，2017A030310028）;广东省科技计划（2016B090907001，2016A040403037，2016B090906002，2017B090907016，2017A050503002）;广州科技计划（201804020033）资助项目
- DOI：10.3788/fgxb20194002.0164
  中图分类号： O484.4
- 收稿日期：2018-05-01，
  
  修回日期：2018-06-20，
  
  网络出版日期：2018-06-27，
  
  纸质出版日期：2019-02-05
- 稿件说明：
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张旭, 刘贤哲, 袁炜健等. 退火温度对旋涂法制备SnO2薄膜性能的影响[J]. 发光学报, 2019,40(2): 164-170

ZHANG Xu, LIU Xian-zhe, YUAN Wei-jian etc. Effect of Annealing Temperature on Properties of SnO2 Thin Films Prepared by Spin Coating[J]. Chinese Journal of Luminescence, 2019,40(2): 164-170
张旭, 刘贤哲, 袁炜健等. 退火温度对旋涂法制备SnO2薄膜性能的影响[J]. 发光学报, 2019,40(2): 164-170 DOI： 10.3788/fgxb20194002.0164.

ZHANG Xu, LIU Xian-zhe, YUAN Wei-jian etc. Effect of Annealing Temperature on Properties of SnO2 Thin Films Prepared by Spin Coating[J]. Chinese Journal of Luminescence, 2019,40(2): 164-170 DOI： 10.3788/fgxb20194002.0164.

摘要

采用旋涂法在玻璃基底上制备SnO

薄膜，通过原子力显微镜（AFM）、X射线反射（XRR）、傅氏转换红外线光谱仪（FT-IR）、X射线衍射（XRD）、紫外-可见分光光度计、四探针、开尔文探针系统对薄膜的表面形貌、结构及光学特性、电学特性进行分析，探讨了退火温度对薄膜质量的影响及作用机制。研究发现:随着退火温度升高，薄膜厚度和有机成分杂质减小，薄膜密度递增，但薄膜表面粗糙度有所上升；当退火温度升高至500℃时，薄膜结构由非晶转变为结晶，其主要晶面为氧化锡的（110）、（101）和（211）晶面。旋涂法制备的氧化锡薄膜在可见光区域的平均透光率在90%以上，随着退火温度上升，薄膜在400~800 nm波段的透光率先减小后增大，薄膜的带隙宽度分别为3.840 eV（沉积态薄膜）、3.792 eV（100℃）、3.690 eV（300℃）和3.768 eV（500℃）；薄膜的电导率也随着退火温度升高而增加，在500℃时电导率高达916 S/m；薄膜的功函数先增大后减小，分别为（4.610.005）eV（沉积态薄膜）、（4.640.005）eV（100℃）、（4.820.025）eV（300℃）、（4.780.065）eV（500℃）。

Abstract

Tin oxide thin films were prepared on glass substrates by spin coating

then

films were annealed at different temperatures in the air. The morphology

structural characteristics

optical properties and electrical properties of the films were characterized by atomic force microscope(AFM)

X-ray reflection system(XRR)

FT-IR

X-ray diffraction(XRD)

UV-visible spectrophotometer

four-probe tester and Kelvin Probe

and the effect of annealing temperature on the quality of film and its mechanism have been studied. The results show that

as the annealing temperature increases

the thickness of the films decreases

the content of organic in films reduces

and the density of the films increases

however

the surface roughness of the film increases. When the annealing temperature is 500℃

SnO

crystals appear on the film

the (101)

(110)

(211) crystal phases appear. Transmittance of samples in the visible light region is above 90%. As the annealing temperature increases

the transmittance of the film in 400-800 nm band decreases first and then increases

and bandgap widths of the films are 3.840 eV(as-deposited)

3.792 eV(100℃)

3.690 eV(300℃)

and 3.768 eV(500℃); the conductivity of the film increases

and the conductivity reaches 916 S/m at 500℃; the work function of the film increases and then decreases

and work function of the films is (4.610.005) eV(as-deposited)

(4.640.005) eV(100℃)

(4.820.025) eV(300℃)

(4.780.065) eV(500℃).

关键词

Keywords

references

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