MA0.6Cs0.4PbBr3钙钛矿发光二极管瞬态电致发光研究

刘欢; 毕文涛; 高逢强; 胡煜峰; 娄志东; 邓振波; 腾枫; 侯延冰

doi:10.3788/fgxb20194001.0089

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MA_0.6Cs_0.4PbBr₃钙钛矿发光二极管瞬态电致发光研究

器件制备及器件物理 | 更新时间：2020-08-12

- MA_0.6Cs_0.4PbBr₃钙钛矿发光二极管瞬态电致发光研究
- Investigation on Transient Electroluminescence from Perovskite Light Emitting Diode Based on MA_0.6Cs_0.4PbBr₃
- 发光学报 2019年40卷第1期页码：89-96
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61775011，61475017）资助项目()
- DOI：10.3788/fgxb20194001.0089
  中图分类号： O484.4
- 收稿日期：2018-03-22，
  
  修回日期：2018-05-26，
  
  网络出版日期：2018-05-09，
  
  纸质出版日期：2019-01-05
- 稿件说明：
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刘欢, 毕文涛, 高逢强等. MA0.6Cs0.4PbBr3钙钛矿发光二极管瞬态电致发光研究[J]. 发光学报, 2019,40(1): 89-96

LIU Huan, BI Wen-tao, GAO Feng-qiang etc. Investigation on Transient Electroluminescence from Perovskite Light Emitting Diode Based on MA0.6Cs0.4PbBr3[J]. Chinese Journal of Luminescence, 2019,40(1): 89-96
刘欢, 毕文涛, 高逢强等. MA0.6Cs0.4PbBr3钙钛矿发光二极管瞬态电致发光研究[J]. 发光学报, 2019,40(1): 89-96 DOI： 10.3788/fgxb20194001.0089.

LIU Huan, BI Wen-tao, GAO Feng-qiang etc. Investigation on Transient Electroluminescence from Perovskite Light Emitting Diode Based on MA0.6Cs0.4PbBr3[J]. Chinese Journal of Luminescence, 2019,40(1): 89-96 DOI： 10.3788/fgxb20194001.0089.

摘要

为研究钙钛矿材料的发光特性和机理，制备了稳定的MA

0.6

0.4

PbBr

钙钛矿发光二极管，通过瞬态电致发光测试，分析了器件在脉冲电压下的电流和发光曲线。MA

0.6

0.4

PbBr

发光二极管在恒定的电流密度10 mAcm

-2

下，亮度从最大值衰减至一半持续时间超过30 min，保证了瞬态测试的准确性。在0.1~20 ms脉宽测试中，器件发光效率随时间增加，断电后有反向电流；在5.5~8.0 V的脉冲幅值测试中，低电压的亮度最先达到饱和；在0~2.0 V基准电压测试中，高基准电压时亮度值更低。分析瞬态测试结果，发现离子迁移（MA

，Br

）导致钙钛矿层的界面附近发生能带弯曲，使得载流子注入减弱，同时抑制了激子的离化，提高了激子复合几率。

Abstract

In order to analyze the luminescent characteristics and mechanism of perovskite materials

a stable perovskite light emitting diode was prepared. The transient current and transient electroluminescence of the device driven by electric pulsed are investigated. At a constant current density of 10 mAcm

-2

the luminance attenuated from the maximum to half in a duration of more than 30 min

which ensure the accuracy of the transient test. In the 0.1~20 ms pulse width

the luminous efficiency of the device increases with time

and there is a reverse current after power turn-off. In the pulse amplitude test

the brightness of low voltage easily reaches its saturation. In the offset voltage test

the intensity of electroluminescence at high offset voltage is lower than that at low offset voltage. Analyzing the transient test results

we can conclude that ion migration (MA

) leads to the bending of energy band in the interface of the perovskite layer

which weakens the carrier injection. Meanwhile

the exciton dissociation is suppressed

leading an increase in the electroluminescence efficiency.

关键词

Keywords

references

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