硒化温度对共溅射法制备的CZTSSe薄膜与电池性能的影响

孙孪鸿; 沈鸿烈; 黄护林; 李玉芳; 商慧荣

doi:10.3788/fgxb20194001.0082

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硒化温度对共溅射法制备的CZTSSe薄膜与电池性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 硒化温度对共溅射法制备的CZTSSe薄膜与电池性能的影响
- Influence of Selenization Temperature on Co-sputtered CZTSSe Thin Films and Related Solar Cells
- 发光学报 2019年40卷第1期页码：82-88
- 作者机构：
  
  1. 南京航空航天大学能源与动力学院,江苏南京,210016
  2. 南京航空航天大学材料科学与技术学院江苏省能量转换材料与技术重点实验室,江苏南京,210016
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61774084）();江苏省科技成果转化专项资金（BA2015121）();江苏省前瞻性联合创新项目（BY2016003-09）();中央高校基本科
- DOI：10.3788/fgxb20194001.0082
  中图分类号： O472
- 收稿日期：2018-03-15，
  
  修回日期：2018-05-25，
  
  网络出版日期：2018-06-13，
  
  纸质出版日期：2019-01-05
- 稿件说明：
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孙孪鸿, 沈鸿烈, 黄护林等. 硒化温度对共溅射法制备的CZTSSe薄膜与电池性能的影响[J]. 发光学报, 2019,40(1): 82-88

SUN Luan-hong, SHEN Hong-lie, HUANG Hu-lin etc. Influence of Selenization Temperature on Co-sputtered CZTSSe Thin Films and Related Solar Cells[J]. Chinese Journal of Luminescence, 2019,40(1): 82-88
孙孪鸿, 沈鸿烈, 黄护林等. 硒化温度对共溅射法制备的CZTSSe薄膜与电池性能的影响[J]. 发光学报, 2019,40(1): 82-88 DOI： 10.3788/fgxb20194001.0082.

SUN Luan-hong, SHEN Hong-lie, HUANG Hu-lin etc. Influence of Selenization Temperature on Co-sputtered CZTSSe Thin Films and Related Solar Cells[J]. Chinese Journal of Luminescence, 2019,40(1): 82-88 DOI： 10.3788/fgxb20194001.0082.

摘要

采用共溅射法结合后硒化成功制备出CZTSSe薄膜，主要研究了不同的硒化温度对CZTSSe薄膜与电池性能的影响。分别采用X射线衍射仪、拉曼光谱仪、扫描电子显微镜、紫外-可见-近红外分光光度计、霍尔效应测量仪及数字电源表对不同硒化温度下制备的CZTSSe薄膜的结构、形貌、光电与太阳电池性能进行了表征与分析。结果表明，当硒化温度为580℃时，CZTSSe薄膜的结晶性最好，薄膜表面均匀致密且其电阻率和载流子浓度达到最小值和最大值，分别为1.57 cm和8.210

-3

，该硒化温度下制备得到的CZTSSe太阳电池的短路电流和转换效率最高达到30.68 mA/cm

和5.17%。相对于550℃和600℃硒化温度下的CZTSSe太阳电池，其光电转换效率分别提高了36%和6%。另外，随着硒化温度的升高，CZTSSe薄膜在XRD中的（112）峰位和Raman中的A1模式振动峰位都向小衍射角和短波数方向移动，薄膜的禁带宽度也从1.26 eV减小至1.21 eV。

Abstract

CZTSSe thin films were fabricated by co-sputtering method followed by selenization. The effect of selenization temperature on CZTSSe thin films and its solar cell performance was studied. The structure

morphology

optoelectronic and solar cell performance were characterized by X-ray diffraction

Raman

Scanning electron microscope (SEM)

ultraviolet-visible-near infrared (UV-Vis-NIR) spectroscopy

Hall effect measurement and digital source meter

respectively. The crystallinity of CZTSSe thin films showed the best crystallinity when the selenization temperature was 580℃ and the film surface was uniform and dense. The resistivity and carrier concentration reached minimum and maximum values of 1.57 cm and 8.210

-3

respectively. The short-circuit current and conversion efficiency of the CZTSSe solar cells prepared at this temperature were up to 30.68 mA/cm

and 5.17%

respectively. Compared with the solar cells selenized at 550℃ and 600℃

the conversion efficiency of CZTSSe solar cells selenized at 580℃ increased by 36% and 6% respectively. With increasing selenization temperature

the position of the (112) peak in XRD patterns and Raman peaks corresponding to A1 mode systematically shifted to lower diffraction angle and wavenumbers. Meanwhile

the band gap of the films decreased from 1.26 eV to 1.21 eV.

关键词

Keywords

references

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