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新型Gd2SiO5:RE荧光粉的制备和发光性能
Preparation and Photoluminescent Properties of Gd2SiO5: RE Phosphors
- 发光学报 2019年40卷第1期 页码：9-16
- 作者机构：
1. 南昌大学 材料科学与工程学院,江西 南昌,330031
2. 南昌大学 前湖学院,江西 南昌,330001
3. 南昌大学 江西省轻质高强结构材料重点实验室,江西 南昌,330001
- 作者简介：
- 基金信息：国家重点研发计划（2016YFB0701201，2016YFB0701203，2017YFB1103701）();国家自然科学基金（11564025，51671101，
DOI：10.3788/fgxb20194001.0009
中图分类号： TB332收稿日期：2018-04-04，
修回日期：2018-05-26，
网络出版日期：2018-06-13，
纸质出版日期：2019-01-05
- 稿件说明：
移动端阅览
王楠, 罗岚, 郭锐等. 新型Gd<sub>2</sub>SiO<sub>5</sub>:<em>RE</em>荧光粉的制备和发光性能[J]. 发光学报, 2019,40(1): 9-16
WANG Nan, LUO Lan, GUO Rui etc. Preparation and Photoluminescent Properties of Gd<sub>2</sub>SiO<sub>5</sub>: <em>RE</em> Phosphors[J]. Chinese Journal of Luminescence, 2019,40(1): 9-16
王楠, 罗岚, 郭锐等. 新型Gd<sub>2</sub>SiO<sub>5</sub>:<em>RE</em>荧光粉的制备和发光性能[J]. 发光学报, 2019,40(1): 9-16 DOI： 10.3788/fgxb20194001.0009.
WANG Nan, LUO Lan, GUO Rui etc. Preparation and Photoluminescent Properties of Gd<sub>2</sub>SiO<sub>5</sub>: <em>RE</em> Phosphors[J]. Chinese Journal of Luminescence, 2019,40(1): 9-16 DOI： 10.3788/fgxb20194001.0009.
摘要
以Gd
2
O
3
、SiO、稀土氧化物为原料采用高温固相法制备了Gd
2（1-
x
）
SiO
5
:2
xRE
荧光粉体。X射线衍射分析结果表明Gd/Si配比为1.9，BaF
2
助熔剂用量为5，煅烧条件为1 500℃保温3 h得到结晶良好的Gd
2
SiO
5
及Gd
2
SiO
5
:
RE
粉体。光谱分析表明，Gd
2
SiO
5
:Eu荧光粉末激发波段为250~470 nm，而Gd
2
SiO
5
:Tb为250~320 nm；前者发射主峰为620 nm （与Eu
3+
的
5
D
0
7
F
2
对应），后者为548 nm （与Tb
3+
的
5
D
4
7
F
5
对应）；Eu
3+
和Tb
3+
的最佳掺杂量为7%。
f
a
（
E
）和发射带
f
e
（
E
）交叠越大，则电偶极-电偶极作用机制的跃迁几率越高，Gd
3+
-Tb
3+
能带交叠程度大于Gd
3+
-Eu
3+
，Tb
3+
的量子效率要高于Eu
3+
。
Abstract
Gd
2
SiO
5
:
RE
phosphors were prepared by high temperature solid-state method with Gd
2
O
3
and SiO as the raw material. The effects of calcining temperature
Gd/Si atomic ratio and fluxing agent on the Gd
2
SiO
5
crystallized power fabrication were studied systematically
by means of X-ray diffraction (XRD). The optimum calcining condition is holding at 1 500℃ for 3 h with Gd/Si atom ratio of 1.9
and BaF
2
of 5 used as flux. Photoluminescent spectra show that the excitation rang is 250-470 nm for Gd
2
SiO
5
:Eu
while 250-320 nm for Gd
2
SiO
5
:Tb. The strongest peak in the emission spectra is 620 nm (related to Eu
3+
:
5
D
0
7
F
2
) for the former phosphor. For the later phosphor
the strongest peak locates at 548 nm (related to Tb
3+
:
5
D
4
7
F
5
). The best doping amount is 7% for Eu
3+
and 5% Tb
3+
. The collaboration of
f
a
(
E
) and
f
e
(
E
) for Gd
3+
-Tb
3+
is better than that of Gd
3+
-Eu
3+
so the Gd
2
SiO
5
:
x
Tb will have higher quantum yields than Gd
2
SiO
5
:
x
Tb.
关键词
Keywords
references
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