阴极修饰层CuPc、ZnPc、C60对OLED光电性能的影响

李文佳; 苏丽娜; 任舰; 吴甲奇

doi:10.3788/fgxb20183912.1757

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阴极修饰层CuPc、ZnPc、C₆₀对OLED光电性能的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 阴极修饰层CuPc、ZnPc、C₆₀对OLED光电性能的影响
- Influence of CuPc, ZnPc, C₆₀ as Cathode Modification Layer on The Performance of OLED
- 发光学报 2018年39卷第12期页码：1757-1764
- 作者机构：
  
  1. 淮阴师范学院计算机科学与技术学院,江苏淮安,223300
  2. 尚德太阳能电力有限公司,江苏无锡,214028
- 作者简介：
- 基金信息：
  
  江苏省高等学校自然科学研究面上项目（17KJB535001，17KJB510007，18KJB510005）资助()
- DOI：10.3788/fgxb20183912.1757
  中图分类号： TN383+.1
- 收稿日期：2018-07-31，
  
  修回日期：2018-09-23，
  
  网络出版日期：2018-10-15，
  
  纸质出版日期：2018-12-05
- 稿件说明：
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李文佳, 苏丽娜, 任舰等. 阴极修饰层CuPc、ZnPc、C60对OLED光电性能的影响[J]. 发光学报, 2018,39(12): 1757-1764

LI Wen-jia, SU Li-na, REN Jian etc. Influence of CuPc, ZnPc, C60 as Cathode Modification Layer on The Performance of OLED[J]. Chinese Journal of Luminescence, 2018,39(12): 1757-1764
李文佳, 苏丽娜, 任舰等. 阴极修饰层CuPc、ZnPc、C60对OLED光电性能的影响[J]. 发光学报, 2018,39(12): 1757-1764 DOI： 10.3788/fgxb20183912.1757.

LI Wen-jia, SU Li-na, REN Jian etc. Influence of CuPc, ZnPc, C60 as Cathode Modification Layer on The Performance of OLED[J]. Chinese Journal of Luminescence, 2018,39(12): 1757-1764 DOI： 10.3788/fgxb20183912.1757.

摘要

采用真空蒸镀法分别制备了以CuPc、ZnPc、C

为阴极修饰层的OLED，对比研究了它们对OLED光电性能的影响。从能级结构、表面形貌、折射率及纳米界面等方面对载流子注入和输运进行了探讨。结果表明:修饰层使器件性能显著提高，它不仅降低OLED开启电压（最低至4.2 V）、提高OLED电流密度及发光效率（最高至13.49 lm/W），同时增强了器件的发光稳定性（180 s后光强保持在90%以上），其中以CuPc为阴极修饰层的器件表现的性能最好。发光光谱方面，以CuPc和ZnPc作为修饰层的器件对550~650 nm的红光部分略有吸收，而C

作为修饰层的器件光谱则无太大变化，这是由修饰层材料的吸收系数随不同波长而变化所致。实验结果说明，若想较大程度地提高器件电性能，酞菁材料是不错的选择；若对光谱有要求，可用C

做阴极修饰层。

Abstract

Different materials(CuPc

ZnPc

) were used as the cathode buffer layers in typical OLED(ITO/TPD/Alq

/Al) prepared by evaporation

respectively. The influences of those materials on electroluminescence characteristics were investigated and relative mechanisms were discussed. Energy level structure

surface morphology

refractive index

nano-interface and some other mechanisms were used to discuss the injection and transportation of carriers. It is found that the buffer layers can evidently improve the device's performances:not only decrease the drive voltage(to 4.2 V)

but also increase the current density and efficiency(to 13.49 lm/W)

as well as enhance the stability(the intensity remained above 90% after 180 s). Device with CuPc layer achieves the best performance. Besides

CuPc and ZnPc cathode buffer layers show strong absorbing properties on OLED's spectrum between 550 nm and 650 nm

while C

layer did not exhibit this effect. This is because the absorption coefficient of each material corresponds to different wavelengths. The results explain that CuPc and ZnPc cathode buffer layers could commendably improve OLED's characteristics

while fullerene(C

) is a good choice if there is a strict request on spectrum.

关键词

Keywords

references

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