基于金属掺杂ITO透明导电层的紫外LED制备

文如莲; 胡晓龙; 高升; 梁思炜; 王洪

doi:10.3788/fgxb20183912.1735

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基于金属掺杂ITO透明导电层的紫外LED制备

器件制备及器件物理 | 更新时间：2020-08-12

- 基于金属掺杂ITO透明导电层的紫外LED制备
- Fabrication of UV LEDs with Metal-doped ITO Transparent Conductive Layer
- 发光学报 2018年39卷第12期页码：1735-1742
- 作者机构：
  
  1. 华南理工大学物理与光电学院广东省光电工程技术研究开发中心,广东广州,510640
  2. 广州现代产业技术研究院,广东广州,511458
- 作者简介：
- 基金信息：
  
  广东省科技计划（2015B010127013，2016B010123004，2017B010112003）();广州市科技计划（201504291502518，2016
- DOI：10.3788/fgxb20183912.1735
  中图分类号： TP394.1;TH691.9
- 收稿日期：2018-03-25，
  
  修回日期：2018-05-29，
  
  网络出版日期：2018-06-13，
  
  纸质出版日期：2018-12-05
- 稿件说明：
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文如莲, 胡晓龙, 高升等. 基于金属掺杂ITO透明导电层的紫外LED制备[J]. 发光学报, 2018,39(12): 1735-1742

WEN Ru-lian, HU Xiao-long, GAO Sheng etc. Fabrication of UV LEDs with Metal-doped ITO Transparent Conductive Layer[J]. Chinese Journal of Luminescence, 2018,39(12): 1735-1742
文如莲, 胡晓龙, 高升等. 基于金属掺杂ITO透明导电层的紫外LED制备[J]. 发光学报, 2018,39(12): 1735-1742 DOI： 10.3788/fgxb20183912.1735.

WEN Ru-lian, HU Xiao-long, GAO Sheng etc. Fabrication of UV LEDs with Metal-doped ITO Transparent Conductive Layer[J]. Chinese Journal of Luminescence, 2018,39(12): 1735-1742 DOI： 10.3788/fgxb20183912.1735.

摘要

为降低ITO薄膜对紫外波段的光吸收，制备低电压高功率的紫外LED，研究了一种基于金属掺杂ITO透明导电层的365 nm紫外LED的制备工艺。利用1 cm厚的石英片生长了不同厚度ITO薄膜以及在ITO上掺杂不同金属的新型薄膜，并研究了在不同的退火条件下这种薄膜的电阻和透过率，分析了掺杂金属ITO薄膜的带隙变化。将这种掺杂的ITO薄膜生长在365 nm外延片上并完成电极生长，制备成14 mil28 mil的正装LED芯片。利用电致发光（EL）设备对LED光电性能进行测试并对比。实验结果表明:掺Al金属的ITO薄膜能够相对ITO薄膜的带隙提高0.15 eV。在600℃退火后，方块电阻降低6.2 /□，透过率在356 nm处达到90.8%。在120 mA注入电流下，365 nm LED的电压降低0.3 V，功率提高14.7%。ITO薄膜掺金属能够影响薄膜带隙，改变紫光LED光电性能。

Abstract

In order to reduce the optical absorption of ITO thin films to UV waveband and to prepare low voltage as well as high power ultraviolet LEDs

the preparation process of 365 nm UV LED based on metal-doped ITO(Metal-ITO) transparent conductive layer was studied. The ITO thin films of different thickness and doped with different metals on ITO layer were grown by using 1 cm thickness quartz substrate

and the resistance and transmittance of the films were studied under different annealing conditions. The change of bandgap of Metal-ITO thin films was analyzed. Then

the Metal-ITO thin films were grown on 365 nm epitaxial wafers and completed the electrode growth

14 mil28 mil formal LEDs were prepared. Finally

the photoelectric properties of LED with Electroluminescence(EL) equipment were tested and compared. The experimental results show that the bandgap of Al-ITO thin film can be increased by 0.15 eV compared with that of ITO thin film. After annealing at 600℃

the square resistance is reduced by 6.2 /□ and the transmittance is 90.8%. At 120 mA injection current

the decrease of voltage of 365 nm LED is 0.3 V and the increase of light output power is 14.7%. So

the Metal-ITO film can influence the bandgap of the film and along with the change of photoelectric performance of UV LED.

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references

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