CMOS图像传感器在质子辐照下热像素的产生和变化规律

王田珲; 李豫东; 文林; 冯婕; 蔡毓龙; 马林东; 张翔; 郭旗

doi:10.3788/fgxb20183912.1697

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CMOS图像传感器在质子辐照下热像素的产生和变化规律

器件制备及器件物理 | 更新时间：2020-08-12

- CMOS图像传感器在质子辐照下热像素的产生和变化规律
- Generation and Annealing of Hot Pixels of CMOS Image Sensor Induced by Proton
- 发光学报 2018年39卷第12期页码：1697-1704
- 作者机构：
  
  1. 中国科学院大学北京,100049
  2. 中国科学院特殊环境功能材料与器件重点试验室, 新疆电子信息材料与器件重点试验室, 中国科学院新疆理化技术研究所,新疆乌鲁木齐,830011
- 作者简介：
- 基金信息：
  
  GF预研基金（6140A2404051）();中国科学院西部之光项目（2016-QNXZ-B-2）资助()
- DOI：10.3788/fgxb20183912.1697
  中图分类号： TP394.1;TH691.9
- 收稿日期：2018-05-02，
  
  修回日期：2018-10-17，
  
  网络出版日期：2018-05-21，
  
  纸质出版日期：2018-12-05
- 稿件说明：
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王田珲, 李豫东, 文林等. CMOS图像传感器在质子辐照下热像素的产生和变化规律[J]. 发光学报, 2018,39(12): 1697-1704

WANG Tian-hui, LI Yu-dong, WEN Lin etc. Generation and Annealing of Hot Pixels of CMOS Image Sensor Induced by Proton[J]. Chinese Journal of Luminescence, 2018,39(12): 1697-1704
王田珲, 李豫东, 文林等. CMOS图像传感器在质子辐照下热像素的产生和变化规律[J]. 发光学报, 2018,39(12): 1697-1704 DOI： 10.3788/fgxb20183912.1697.

WANG Tian-hui, LI Yu-dong, WEN Lin etc. Generation and Annealing of Hot Pixels of CMOS Image Sensor Induced by Proton[J]. Chinese Journal of Luminescence, 2018,39(12): 1697-1704 DOI： 10.3788/fgxb20183912.1697.

摘要

应用于空间的图像传感器在辐射影响下产生的热像素严重影响空间光电探测性能，本文通过质子辐照试验研究了热像素的产生和变化规律。首先，使用3 MeV和10 MeV两种能量的质子对图像传感器进行辐照，分析不同能量、不同注量的质子辐照产生热像素的性质；其次，再对辐照后的器件进行退火试验，分析热像素的退火规律。对于相同注量辐照，3 MeV质子辐照下热像素产生率大约是10 MeV质子辐照下的2.3倍，但是10 MeV质子辐照产生热像素的灰度值高于3 MeV质子；辐照过程中热像素的数量都是随着注量的增加线性增加。退火过程中，热像素数量都不断减少，而3 MeV质子辐照产生的热像素相比于10 MeV质子，退火更为显著。结果表明，质子辐照下每个质子与器件之间的作用过程及产生缺陷的机制是相对独立的，不同质子的作用过程之间没有相关性。不同能量的质子辐照产生缺陷的类型不同，导致热像素具有不同特性。

Abstract

Hot pixels of imagers induced by space radiation may result in performance degradation of space photoelectric detection and space imaging system. In this paper

generation and annealing mechanisms of hot pixels on CMOS image sensors(CIS) are studied by proton irradiation experiments. First

in order to investigate the properties of hot pixels induced by protons

several CIS samples were irradiated with two different energy levels (3 MeV and 10 MeV) of proton beam. In irradiation processes

characterizations of samples were carried out at different fluence points. Second

annealing experiments were carried out on the CIS samples after the irradiation. The annealing behaviors of hot pixels induced by protons of 3 MeV and 10 MeV were investigated. For the same fluence of proton irradiation

the number of hot pixels induced by 3 MeV proton beam is about 2.3 times as the situation of 10 MeV proton beam. However

comparing with the average gray value of hot pixels induced by proton beam

10 MeV is larger than 3 MeV. And the number of hot pixels produced by both energy levels increased linearly with the increasing of proton fluence. In the room temperature annealing process

the number of hot pixels decreased significantly

and the hot pixels induced by 10 MeV protons were more stable than those induced by 3 MeV protons. It was found that the interaction between each proton and each pixel is independent with each other. Under different energy levels

proton incidence produced different defects which led to different hot pixels.

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