常压CVD法合成铌掺杂少层MoS2

申赫; 王岩岩

doi:10.3788/fgxb20183912.1654

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常压CVD法合成铌掺杂少层MoS₂

材料合成及性能 | 更新时间：2020-08-12

- 常压CVD法合成铌掺杂少层MoS₂
- Synthesis of Nb Doped Few-layered MoS₂ by Ambient Pressure CVD
- 发光学报 2018年39卷第12期页码：1654-1658
- 作者机构：
  
  1. 吉林师范大学功能材料物理与化学教育部重点实验室,吉林长春,130103
  2. 吉林师范大学环境友好材料制备与应用教育部重点实验室,吉林长春,130103
  3. 吉林师范大学物理学院,吉林四平,136000
  4. 吉林师范大学化学学院,吉林四平,136000
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61705078，61704065，11374296）();吉林省科技厅发展计划（20180520179JH，20150414003GH）资助项目()
- DOI：10.3788/fgxb20183912.1654
  中图分类号： O484.4
- 收稿日期：2018-08-06，
  
  修回日期：2018-10-14，
  
  纸质出版日期：2018-12-05
- 稿件说明：
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申赫, 王岩岩,. 常压CVD法合成铌掺杂少层MoS2[J]. 发光学报, 2018,39(12): 1654-1658

SHEN He, WANG Yan-yan,. Synthesis of Nb Doped Few-layered MoS2 by Ambient Pressure CVD[J]. Chinese Journal of Luminescence, 2018,39(12): 1654-1658
申赫, 王岩岩,. 常压CVD法合成铌掺杂少层MoS2[J]. 发光学报, 2018,39(12): 1654-1658 DOI： 10.3788/fgxb20183912.1654.

SHEN He, WANG Yan-yan,. Synthesis of Nb Doped Few-layered MoS2 by Ambient Pressure CVD[J]. Chinese Journal of Luminescence, 2018,39(12): 1654-1658 DOI： 10.3788/fgxb20183912.1654.

摘要

利用粉体NbCl

作为Nb掺杂源，采用常压CVD方法合成了大尺寸Nb掺杂的少层MoS

薄膜。通过扫描电子显微镜和原子力显微镜观察获得了该薄膜样品的形貌和厚度信息。拉曼光谱和X射线光电子谱测试证实了Nb被掺入到了MoS

薄膜中，Nb掺杂的MoS

合金薄膜已经形成。最后，对Nb掺杂的少层MoS

薄膜的电学性质进行了测试。

Abstract

Base on the ambient pressure CVD method

the large-scale Nb doped few-layered MoS

films were synthesized by using NbCl

powders as the Nb dopant source. The morphology and the thickness of these films were confirmed by scanning electron microscope and atomic force microscope. Raman spectroscopy and X-ray photoelectron spectrometer measurements confirm that Nb has been doped into the MoS

film and the Nb doped MoS

alloy has been formed. The conductivity of the Nb doped few-layered MoS

has also been collected.

关键词

Keywords

references

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