单层WSe2、MoSe2激子发光的压力诱导K-&Lambda;交互转变

付鑫鹏; 周强; 秦莉; 李芳菲; 付喜宏

doi:10.3788/fgxb20183912.1647

您当前的位置：

首页 >

文章列表页 >

单层WSe₂、MoSe₂激子发光的压力诱导K-Λ交互转变

材料合成及性能 | 更新时间：2020-08-12

- 单层WSe₂、MoSe₂激子发光的压力诱导K-Λ交互转变
- Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe₂ and MoSe₂
- 发光学报 2018年39卷第12期页码：1647-1653
- 作者机构：
  
  1. 吉林大学物理学院,吉林长春,130021
  2. 中国科学院长春光学精密机械与物理研究所发光学及应用国家重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家重点研发计划（2018YFB1107600）();吉林省科技发展计划项目（20160204073GX）资助()
- DOI：10.3788/fgxb20183912.1647
  中图分类号： O472+.3
- 收稿日期：2018-08-12，
  
  修回日期：2018-10-17，
  
  纸质出版日期：2018-12-05
- 稿件说明：
移动端阅览
付鑫鹏, 周强, 秦莉等. 单层WSe2、MoSe2激子发光的压力诱导K-Λ交互转变[J]. 发光学报, 2018,39(12): 1647-1653

FU Xin-peng, ZHOU Qiang, QIN Li etc. Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe2 and MoSe2[J]. Chinese Journal of Luminescence, 2018,39(12): 1647-1653
付鑫鹏, 周强, 秦莉等. 单层WSe2、MoSe2激子发光的压力诱导K-Λ交互转变[J]. 发光学报, 2018,39(12): 1647-1653 DOI： 10.3788/fgxb20183912.1647.

FU Xin-peng, ZHOU Qiang, QIN Li etc. Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe2 and MoSe2[J]. Chinese Journal of Luminescence, 2018,39(12): 1647-1653 DOI： 10.3788/fgxb20183912.1647.

摘要

采用机械剥离法在金刚石对顶砧中制备了单层WSe

和MoSe

样品，利用高压微区荧光光谱测量技术，在氩传压介质环境下对其激子发光行为进行了高压调控研究。其中单层WSe

的中性和负电激子演化趋势在2.43 GPa处出现拐点，单层MoSe

中性激子发光在3.7 GPa处发生了劈裂。结合第一性原理计算分析，确认该不连续现象的产生机制为压力诱导的导带底K-交互转变。该结果可以扩大至整个二维层状材料体系，为发展激子器件垫定基础。

Abstract

Monolayer MoSe

and WSe

samples were prepared by mechanical exfoliation in diamond anvil cell(DAC). The high-pressure micro-area fluorescence spectroscopy technique was used to study excitons emission behavior under pressure in argon pressure-transmitting medium(PTM). The neutral and negative exciton evolutionary trends of monolayer WSe

showed an inflection point at 2.43 GPa

and the neutral exciton emission of monolayer MoSe

appeared a new split peak at 3.7 GPa. Combined with the first-principles calculation and analysis

we confirmed that the mechanism of these discontinuities is the pressure-induced conduction band bottom K- crossover. This result can be extended to the entire two-dimensional layered material family

and laying foundation for the development of exciton devices.

关键词

Keywords

references

CAO T, WANG G, HAN W, et al.. Valley-selective circular dichroism of monolayer molybdenum disulphide[J]. Nat. Commun., 2012, 3:887.

ALLAIN A, KIS A. Electron and hole mobilities in single-layer WSe2[J]. ACS Nano, 2014, 8(7):7180-7185.

MAK K F, HE K, SHAN J, et al.. Control of valley polarization in monolayer MoS2 by optical helicity[J]. Nat. Nanotechnol., 2012, 7(8):494-498.

GANATRA R, ZHANG Q. Few-layer MoS2:a promising layered semiconductor[J]. ACS Nano, 2014, 8(5):4074-4099.

TONGAY S, SUH J, ATACA C, et al.. Defects activated photoluminescence in two-dimensional semiconductors:interplay between bound, charged, and free excitons[J]. Sci. Rep., 2013, 3:2657.

LU X, UTAMA M I B, LIN J H, et al.. Large-area synthesis of monolayer and few-layer MoSe2 films on SiO2 substrates[J]. Nano Lett., 2014, 14:2419-2425.

XIA F N, WANG H, XIAO D, et al.. Two-dimensional material nanophotonics[J]. Nat. Photonics, 2014, 8:899-907.

FAN X, CHANG C H, ZHENG W T, et al.. The electronic properties of single-layer and multilayer MoS2 under high pressure[J]. J. Phys. Chem. C, 2015, 119:10189-10196.

MAK K F, HE K L, LEE C, et al.. Tightly bound trions in monolayer MoS2[J]. Nat. Mater., 2013, 12:207-211.

ROSS J S, WU S F, YU H Y, et al.. Electrical control of neutral and charged excitons in a monolayer semiconductor[J]. Nat. Commun., 2013, 4:1474.

SINGH A, MOODY G, WU S, et al.. Coherent electronic coupling in atomically thin MoSe2[J]. Phys. Rev. Lett., 2014, 112:216804.

CHERNIKOV A, BERKELBACH T C, HILL H M, et al.. Exciton binding energy and nonhydrogenic rydberg series in monolayer WS2[J]. Phys. Rev. Lett., 2014, 113(7):076802.

JONES A M, YU H, GHIMIRE N J, et al.. Optical generation of excitonic valley coherence in monolayer WSe2[J]. Nat. Nanotechnol., 2013, 8(9):634-638.

MAI C, BARRETTE A, YU Y F, et al.. Many-body effects in valleytronics:direct measurement of valley lifetimes in single-layer MoS2[J]. Nano Lett., 2014, 14(1):202-206.

SIE E J, FRENZEL A J, LEE Y H, et al.. Intervalley biexcitons and many-body effects in monolayer MoS2[J]. Phys. Rev. B, 2015, 92:125417.

RIVERA P, SCHAIBLEY J R, JONES A M, et al.. Observation of long-lived interlayer excitons in monolayer MoSe2-WSe2 heterostructures[J]. Nat. Commun., 2015, 6:6242.

SIM S, PARK J, SONG J G, et al.. Exciton dynamics in atomically thin MoS2:interexcitonic interaction and broadening kinetics[J]. Phys. Rev. B, 2013, 88(7):075434.

CASTELLANOS-GOMEZ A, BUSCEMA M, MOLENAAR R, et al.. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping[J]. 2D Mater., 2014, 1(1):011002.

CASTELLANOS-GOMEZ A, VICARELLI L, PRADA E, et al.. Isolation and characterization of few-layer black phosphorus[J]. 2D Mater., 2014, 1(2):025001.

YE Y X, DOU X M, DING K, et al.. Pressure-induced K- crossing in monolayer WSe2[J]. Nanoscale, 2016, 8:10843-10848.

PERDEW J P, BURKE K, ERNZERHOF M. generalized gradient approximation made simple[J]. Phys. Rev. Lett., 1996, 77(18):3865-3868.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

单量子点的发光与应用

OLEDs中的激子及其高效利用

非掺杂型高效绿色磷光有机电致发光器件

LiF超薄层引起的OLEDs发光光谱展宽

单层WSe2、MoSe2激子发光的压力诱导K-Λ交互转变

Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe2 and MoSe2

DOI：10.3788/fgxb20183912.1647

摘要

Abstract

关键词

Keywords

references

单层WSe₂、MoSe₂激子发光的压力诱导K-Λ交互转变

Pressure-induced K-Λ Crossover of Excitons Emissions in Monolayer WSe₂ and MoSe₂