激光辐照VO2薄膜温度场分布及透射特性研究

刘志伟; 路远; 侯典心; 邹崇文

doi:10.3788/fgxb20183911.1604

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激光辐照VO₂薄膜温度场分布及透射特性研究

器件制备及器件物理 | 更新时间：2020-08-12

- 激光辐照VO₂薄膜温度场分布及透射特性研究
- Temperature Field Distribution and Transmittance Characteristics of VO₂ Films Irradiated by Laser
- 发光学报 2018年39卷第11期页码：1604-1612
- 作者机构：
  
  1. 脉冲功率激光技术国家重点实验室,安徽合肥,230037
  2. 国防科技大学电子对抗学院,安徽合肥,230037
  3. 红外与低温等离子体安徽省重点实验室,安徽合肥,230037
  4. 中国科学技术大学国家同步辐射实验室,安徽合肥,230037
- 作者简介：
- 基金信息：
  
  脉冲功率激光技术国家重点实验室主任基金（SKL2013ZR03）资助项目()
- DOI：10.3788/fgxb20183911.1604
  中图分类号： O434.14
- 收稿日期：2018-03-06，
  
  修回日期：2018-04-26，
  
  网络出版日期：2018-06-11，
  
  纸质出版日期：2018-11-05
- 稿件说明：
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刘志伟, 路远, 侯典心等. 激光辐照VO2薄膜温度场分布及透射特性研究[J]. 发光学报, 2018,39(11): 1604-1612

LIU Zhi-wei, LU Yuan, HOU Dian-xin etc. Temperature Field Distribution and Transmittance Characteristics of VO2 Films Irradiated by Laser[J]. Chinese Journal of Luminescence, 2018,39(11): 1604-1612
刘志伟, 路远, 侯典心等. 激光辐照VO2薄膜温度场分布及透射特性研究[J]. 发光学报, 2018,39(11): 1604-1612 DOI： 10.3788/fgxb20183911.1604.

LIU Zhi-wei, LU Yuan, HOU Dian-xin etc. Temperature Field Distribution and Transmittance Characteristics of VO2 Films Irradiated by Laser[J]. Chinese Journal of Luminescence, 2018,39(11): 1604-1612 DOI： 10.3788/fgxb20183911.1604.

摘要

为了探究VO

薄膜受激光辐照的温度场分布，以及1 064 nm激光直接辐照100 s内至相变的激光功率密度阈值，并比较近红外和中红外波段透过率调制特性差异。首先基于COMSOL建立了薄膜受激光辐照的模型并进行了温度场仿真，然后分别测试了薄膜正反面被不同功率密度的1 064 nm激光辐照100 s内激光透过率随时间响应特性。实验中的VO

薄膜利用分子束外延法在Al

基底上制备得到。仿真结果表明，激光功率密度为25 Wmm

-2

时，50 nm厚薄膜在被辐照1 ms时间内即达到相变温度。经激光辐照实验发现:50 nm厚的VO

薄膜正反面受1 064 nm激光直接辐照100 s内至相变的功率密度阈值分别为4.1 Wmm

-2

和5.39 Wmm

-2

。30 nm厚VO

薄膜对1 064 nmn激光的透过率调制深度约为13%，对3 459 nm激光透过率调制深度约62%，说明VO

薄膜对近红外透过率调制特性不明显。

Abstract

In order to explore the temperature field distribution and power density threshold of 1 064 nm laser that irradiate film and make it phase change in 100 s

and to compare the difference between the transmittance modulation characteristics in the near infrared and mid-infrared band

a model of laser irradiation was set up and the temperature field was simulated. Then

the 1 064 nm laser transmittance response characteristic with time was tested in the front and back face of VO

film with different laser power density in 100 s separately. VO

thin films in the experiment were prepared by molecular beam epitaxy on Al

substrate. Simulation results show that the film reaches the phase-transition temperature in 1 ms with 25 Wmm

-2

laser power density. It is found that the laser power density threshold is 4.1 Wmm

-2

and 5.39 Wmm

-2

when irradiating the front and back face of the VO

thin film with 50 nm thickness respectively. The transmittance modulation depth of 1 064 nm is approximately 13% of VO

thin films with 30 nm thickness. However

compared with 62% for 3 459 nm laser

the transmittance modulation characteristic in near infrared is not obvious for VO

thin films.

关键词

Keywords

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