射频磁控溅射法制备的CaWO4：Yb3+薄膜及其发光性能研究

廖金生; 刘宝; 柳少华; 钟来富; 傅俊祥

doi:10.3788/fgxb20143510.1234

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射频磁控溅射法制备的CaWO₄：Yb³⁺薄膜及其发光性能研究

器件制备及器件物理 | 更新时间：2020-08-12

- 射频磁控溅射法制备的CaWO₄：Yb³⁺薄膜及其发光性能研究
- Photoluminescence Properties of Yb³⁺-doped CaWO₄ Thin Films Grown by Radio Frequency Magnetron Sputtering
- 发光学报 2014年35卷第10期页码：1234-1239
- 作者机构：
  
  江西理工大学冶金与化学工程学院,江西赣州,341000
- 作者简介：
- 基金信息：
  
  国家自然科学基金（51162012）;江西省级大学生创新创业训练计划项目（201310407028）;江西省自然科学基金（20142BAB203004）;江西省教育厅基金（GJJ14410）资助项目
- DOI：10.3788/fgxb20143510.1234
  中图分类号： O484.4
- 收稿日期：2014-06-26，
  
  修回日期：2014-08-09，
  
  纸质出版日期：2014-10-03
- 稿件说明：
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廖金生, 刘宝, 柳少华等. 射频磁控溅射法制备的CaWO4：Yb3+薄膜及其发光性能研究[J]. 发光学报, 2014,35(10): 1234-1239

LIAO Jin-sheng, LIU Bao, LIU Shao-hua etc. Photoluminescence Properties of Yb3+-doped CaWO4 Thin Films Grown by Radio Frequency Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2014,35(10): 1234-1239
廖金生, 刘宝, 柳少华等. 射频磁控溅射法制备的CaWO4：Yb3+薄膜及其发光性能研究[J]. 发光学报, 2014,35(10): 1234-1239 DOI： 10.3788/fgxb20143510.1234.

LIAO Jin-sheng, LIU Bao, LIU Shao-hua etc. Photoluminescence Properties of Yb3+-doped CaWO4 Thin Films Grown by Radio Frequency Magnetron Sputtering[J]. Chinese Journal of Luminescence, 2014,35(10): 1234-1239 DOI： 10.3788/fgxb20143510.1234.

摘要

采用射频磁控溅射法制备了CaWO

：Yb

薄膜并考察了沉积气压和时间对其结构、形貌和发光性能的影响。在不同的气压下，薄膜的XRD结果与四方相白钨矿结构相吻合，并且沿（004）方向择优生长。SEM图像显示，薄膜表面由椭圆形颗粒和孔洞组成。在260 nm激发下，Yb

在994 nm处发出强近红外光，并且其强度随着溅射气压的升高总体是不规律的，而随着溅射时间的增加先增强后减弱。由于优良的发光性能，CaWO

：Yb

薄膜可作为潜在增强硅太阳能电池性能的发光转化膜。

Abstract

-doped CaWO

thin films were prepared by radio frequency (RF) magnetron sputtering and the influence of different deposition pressures and time on the structure

surface morphology and optical properties of films were discussed. XRD results confirm that the samples have a tetragonal scheelite structure and the films have a preferential orientation along the (004) direction under different deposition pressures. SEM images show that the surface morphology of the film consists of spherical-like grains and voids. PL spectra indicate that the films emit strong near infrared light centered at 994 nm under 260 nm excitation. The luminescence intensity of Yb

trends to irregular with the increasing of sputtering pressure

and firstly increases and then decreases with the increasing of sputtering time. Excellent luminescence properties of CaWO

:Yb

thin film might be regarded as a potential luminescence converter layer for enhanced silicon solar cell performance.

关键词

Keywords

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