银铝共掺ZnS高效电子传输层的制备与特性

和晓晓; 王文军; 李淑红; 王青如; 杜倩倩; 刘云龙; 史强; 张丙元

doi:10.3788/fgxb20143510.1221

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银铝共掺ZnS高效电子传输层的制备与特性

器件制备及器件物理 | 更新时间：2020-08-12

- 银铝共掺ZnS高效电子传输层的制备与特性
- High Efficiency Electron Transmission Layer Based on Ag-Al Co-doped ZnS in Organic Light-emitting Devices
- 发光学报 2014年35卷第10期页码：1221-1227
- 作者机构：
  
  1. 聊城大学物理科学与信息工程学院,山东聊城,252059
  2. 山东省光通信科学与技术重点实验室,山东聊城,252059
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61275147）;山东省科技攻关计划（2010GGX10127）;山东省自然科学基金（ZR2012AL11，ZR2013EML006）;山东省“泰山学者”建设工程专项经费;聊城大学重点科研基金资助项目
- DOI：10.3788/fgxb20143510.1221
  中图分类号： TN383+.1
- 收稿日期：2014-06-26，
  
  修回日期：2014-07-13，
  
  纸质出版日期：2014-10-03
- 稿件说明：
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和晓晓, 王文军, 李淑红等. 银铝共掺ZnS高效电子传输层的制备与特性[J]. 发光学报, 2014,35(10): 1221-1227

HE Xiao-xiao, WANG Wen-jun, LI Shu-hong etc. High Efficiency Electron Transmission Layer Based on Ag-Al Co-doped ZnS in Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2014,35(10): 1221-1227
和晓晓, 王文军, 李淑红等. 银铝共掺ZnS高效电子传输层的制备与特性[J]. 发光学报, 2014,35(10): 1221-1227 DOI： 10.3788/fgxb20143510.1221.

HE Xiao-xiao, WANG Wen-jun, LI Shu-hong etc. High Efficiency Electron Transmission Layer Based on Ag-Al Co-doped ZnS in Organic Light-emitting Devices[J]. Chinese Journal of Luminescence, 2014,35(10): 1221-1227 DOI： 10.3788/fgxb20143510.1221.

摘要

从量子力学角度分析银铝共掺硫化锌可以作为高效电子传输层材料，从理论上计算出杂质原子的波尔半径，对于银铝共掺硫化锌作为高效的电子传输层的最佳厚度给出了理论参考值。利用银铝共掺硫化锌作为电子传输层，制备了结构为ITO/NPB/Alq

/ZnS：Ag-Al（

）/PBD/Al的有机电致发光器件，分析了不同厚度的银铝共掺硫化锌电子传输层对器件发光强度的影响，并对共掺硫化锌中载流子传输机制进行了分析。实验发现共掺硫化锌具有良好的空穴阻挡和电子传输性能。当银铝共掺硫化锌电子传输层厚度为8 nm时，器件的相对发光强度和电致发光强度相对于没有电子传输层的器件分别增加了430倍和130倍，器件的阈值电压也降低了4 V。与纯硫化锌作为电子传输层器件相比，相对发光强度提高3倍。

Abstract

The possibility of ZnS:Ag-Al film as highly efficiency electron transfer layer (ETL) was analyzed

and the Bohr radius of impurity atoms was calculated by using quantum theory. The best efficient thickness of theoretical reference value was given for the Ag-Al co-doped ZnS as ETL. The organic light-emitting devices (OLEDs) which use the Ag-Al co-doped ZnS film as ETL were fabricated with the structure of ITO/NPB/Alq

/ZnS:Ag-Al(

)/PBD/Al. The effect of Ag-Al co-doped ZnS ETL thickness to the characters of OLEDs were investigated in experiments. It is shown that the relative luminescence intensity and electroluminescence intensity of device with co-doped ZnS ETL (8 nm) increase by 430 times and 130 times respectively as compared to device without ETL. Besides

the turn-on voltage is reduced about 4 V. Comparing with OLED with un-doped ZnS ETL

the relative luminescence intensity of Ag-Al co-doped ZnS ETL devices was enhanced by 3 times. The studied results reveal that Ag-Al co-doped ZnS behaves ideal proprieties of electrons transporting and hole blocking properties. Thus it can be expected that Ag-Al co-doped ZnS could be used as other organic photo-electronic devices.

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references

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