具有电子阻挡层的2 &mu;m InGaAsSb/AlGaAsSb量子阱激光器

安宁; 刘国军; 李占国; 常量; 魏志鹏; 马晓辉

doi:10.3788/fgxb20143510.1205

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具有电子阻挡层的2 μm InGaAsSb/AlGaAsSb量子阱激光器

器件制备及器件物理 | 更新时间：2020-08-12

- 具有电子阻挡层的2 μm InGaAsSb/AlGaAsSb量子阱激光器
- 2 μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer
- 发光学报 2014年35卷第10期页码：1205-1209
- 作者机构：
  
  长春理工大学高功率半导体激光国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61006039，61370043）资助项目
- DOI：10.3788/fgxb20143510.1205
  中图分类号： TN248.4
- 收稿日期：2014-07-12，
  
  修回日期：2014-08-08，
  
  纸质出版日期：2014-10-03
- 稿件说明：
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安宁, 刘国军, 李占国等. 具有电子阻挡层的2 μm InGaAsSb/AlGaAsSb量子阱激光器[J]. 发光学报, 2014,35(10): 1205-1209

AN Ning, LIU Guo-jun, LI Zhan-guo etc. 2 μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer[J]. Chinese Journal of Luminescence, 2014,35(10): 1205-1209
安宁, 刘国军, 李占国等. 具有电子阻挡层的2 μm InGaAsSb/AlGaAsSb量子阱激光器[J]. 发光学报, 2014,35(10): 1205-1209 DOI： 10.3788/fgxb20143510.1205.

AN Ning, LIU Guo-jun, LI Zhan-guo etc. 2 μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer[J]. Chinese Journal of Luminescence, 2014,35(10): 1205-1209 DOI： 10.3788/fgxb20143510.1205.

摘要

为了降低2 m InGaAsSb/AlGaAsSb 量子阱激光器的阈值电流并获得良好的温度特性，在p型波导层及限制层之间引入AlGaAsSb电子阻挡层。采用理论计算方法模拟了电子阻挡层对 InGaAsSb/AlGaAsSb LD输出特性的影响。研究结果表明：电子阻挡层结构可有效减少2 m InGaAsSb/AlGaAsSb 量子阱激光器的Auger复合，抑制量子阱中导带电子向p型限制层的溢出，降低器件的阈值电流，同时改善了温度敏感特性。

Abstract

In order to reduce the threshold current and obtain the good temperature characteristics of 2 m InGaAsSb/AlGaAsSb diode laser

AlGaAsSb electronic stopper layer (ESL) was introduced between p-waveguide and p-cladding layer. The research was conducted by LASTIP. The simulated results reveal that ESL can reduce the threshold current and improve the temperature characteristics of LD effectively. All the advantages are due to the lower Auger recombination rate in the quantum wells and smaller electron concentrations in the p-side

which are caused by the higher band offset between ESL and p-waveguide.

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references

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具有电子阻挡层的2 μm InGaAsSb/AlGaAsSb量子阱激光器

2 μm InGaAsSb/AlGaAsSb Multi-quantum Well Laser Diode with Electron Stopper Layer

DOI：10.3788/fgxb20143510.1205

摘要

Abstract

关键词

Keywords

references