直立Zn2GeO4/ZnO纳米棒阵列的制备及其发光性质研究

李婷; 方芳; 周政; 赵海峰; 方铉; 李金华; 楚学影; 魏志鹏; 房丹; 王晓华

doi:10.3788/fgxb20143510.1188

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直立Zn₂GeO₄/ZnO纳米棒阵列的制备及其发光性质研究

材料合成及性能 | 更新时间：2020-08-12

- 直立Zn₂GeO₄/ZnO纳米棒阵列的制备及其发光性质研究
- Preparation and Luminescent Properties of Upright Zn₂GeO₄/ZnO Nanorod Arrays
- 发光学报 2014年35卷第10期页码：1188-1193
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 长春理工大学,吉林长春,130022
  3. 南昌大学,江西南昌,330088
- 作者简介：
- 基金信息：
  
  国家自然科学基金（61204065，61205193，61307045）;高等学校博士学科点专项科研基金（20112216120005）;吉林省自然科学基金（20121816，201201116，20140520107JH，20140204025GX）;高功率半导体激光国家重点实验室基金（9140C310101120C031115）资助项目
- DOI：10.3788/fgxb20143510.1188
  中图分类号： O469;O484.4
- 收稿日期：2014-06-14，
  
  修回日期：2014-07-08，
  
  纸质出版日期：2014-10-03
- 稿件说明：
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李婷, 方芳, 周政等. 直立Zn2GeO4/ZnO纳米棒阵列的制备及其发光性质研究[J]. 发光学报, 2014,35(10): 1188-1193

LI Ting, FANG Fang, ZHOU Zheng etc. Preparation and Luminescent Properties of Upright Zn2GeO4/ZnO Nanorod Arrays[J]. Chinese Journal of Luminescence, 2014,35(10): 1188-1193
李婷, 方芳, 周政等. 直立Zn2GeO4/ZnO纳米棒阵列的制备及其发光性质研究[J]. 发光学报, 2014,35(10): 1188-1193 DOI： 10.3788/fgxb20143510.1188.

LI Ting, FANG Fang, ZHOU Zheng etc. Preparation and Luminescent Properties of Upright Zn2GeO4/ZnO Nanorod Arrays[J]. Chinese Journal of Luminescence, 2014,35(10): 1188-1193 DOI： 10.3788/fgxb20143510.1188.

摘要

利用化学气相沉积法（CVD）在表面溅射Au和沉积ZnO籽晶的硅衬底上分别生长高度有序、垂直密布的直立Zn

GeO

/ZnO纳米棒阵列，利用扫描电子显微镜（SEM）、X射线衍射仪（XRD）和光致发光（PL）谱测试手段对所制备样品进行表征和发光特性的研究。所制备的Zn

GeO

/ZnO纳米棒的直径为350~400 nm，高度为10~11 m；室温PL谱观察到3个来源于Zn

GeO

的典型发光峰。最后，对CVD法制备的Zn

GeO

/ZnO纳米棒生长机理进行了分析。该种直立性良好的一维纳米棒材料可以广泛地应用到纳米光电子器件中。

Abstract

Upright Zn

GeO

/ZnO nanorod arrays were prepared on silicon wafer with two kinds of seed layers (metal Au and ZnO seed) by the chemical vapor deposition(CVD) method. Scanning electron microscopy (SEM)

X-ray diffractometer (XRD) and photoluminescence (PL) measurements were used to characterize the samples and reaseach its luminescence properties. The results show that the radius of Zn

GeO

/ZnO nanorod is 350-400 nm and the length is 10-11 m. The photoluminescence spectrum (PL) of Zn

GeO

nanorods exhibites three fluorescence emission peaks centered at 415

445

488 nm. Moreover

a detailed description of the probable growth mechanism of the upright Zn

GeO

/ZnO nanorod arrays was discussed. Its vertical orientation is desirable for use in optoelectronic field.

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Keywords

references

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