高峰值功率808 nm垂直腔面发射激光器列阵

张金胜; 刘晓莉; 崔锦江; 宁永强; 朱洪波; 张金龙; 张星; 王立军

doi:10.3788/fgxb20143509.1098

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高峰值功率808 nm垂直腔面发射激光器列阵

器件制备及器件物理 | 更新时间：2020-08-12

- 高峰值功率808 nm垂直腔面发射激光器列阵
- High Peak Power 808 nm Vertical-cavity Surface-emitting Laser Array
- 发光学报 2014年35卷第9期页码：1098-1103
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
  3. 焦作大学机电工程学院,河南焦作,454000
  4. 中国科学院苏州生物医学工程技术研究所,江苏苏州,215163
- 作者简介：
- 基金信息：
  
  国家自然科学基金（51172225，11074247，61204056，61106047）();国家自然科学基金重点项目（90923037）资助()
- DOI：10.3788/fgxb20143509.1098
  中图分类号： TN248.4
- 收稿日期：2014-04-28，
  
  修回日期：2014-06-03，
  
  网络出版日期：2014-06-27，
  
  纸质出版日期：2014-09-03
- 稿件说明：
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张金胜, 刘晓莉, 崔锦江等. 高峰值功率808 nm垂直腔面发射激光器列阵[J]. 发光学报, 2014,35(9): 1098-1103

ZHANG Jin-sheng, LIU Xiao-li, CUI Jin-jiang etc. High Peak Power 808 nm Vertical-cavity Surface-emitting Laser Array[J]. Chinese Journal of Luminescence, 2014,35(9): 1098-1103
张金胜, 刘晓莉, 崔锦江等. 高峰值功率808 nm垂直腔面发射激光器列阵[J]. 发光学报, 2014,35(9): 1098-1103 DOI： 10.3788/fgxb20143509.1098.

ZHANG Jin-sheng, LIU Xiao-li, CUI Jin-jiang etc. High Peak Power 808 nm Vertical-cavity Surface-emitting Laser Array[J]. Chinese Journal of Luminescence, 2014,35(9): 1098-1103 DOI： 10.3788/fgxb20143509.1098.

摘要

为了实现808 nm垂直腔面发射激光器（VCSEL）的高功率输出，对808 nm VCSEL的分布式布拉格反射镜（DBR）结构材料进行了优化设计，分析了Al

As材料中Al组分对于折射率与吸收的影响，并最终确定了材料。采用非闭合环结构制备了22 VCSEL列阵。通过波形分析法对VCSEL列阵的功率进行了测量：在脉冲宽度为20 ns、重复频率为100 Hz、注入电流为110 A的条件下，最大峰值功率为30 W；在脉冲宽度为60 ns、重复频率为100 Hz、注入电流为30 A的条件下，最大功率为9 W。对列阵的近场和远场进行了测量，激光器垂直发散角和水平发散角半高全宽分别为16.9和17.6。

Abstract

In order to achieve high output power of 808 nm vertical cavity surface emitting laser (VCSEL) array

the DBR material of 808 nm VCSEL was optimized

and Al content of Al

As was analyzed for the influence on refractive index and absorption. Based on the above analysis

2 2 VCSEL array was designed and fabricated with non-closed ring structure. The peak power of the VCSEL array was tested under waveform analysis method. The peak power is 30 W in 60 ns pulse width and 100 Hz repetition rate

and 9 W in 20 ns pulse width and 100 Hz repetition rate

respectively. The near-field and far-field of VCSEL array were also measured. The beam divergences with full-width at half maximum are 16.9 and 17.6 in the vertical and lateral directions

respectively.

关键词

Keywords

references

Ma X Y, Wang J, Liu G P. Present situation of investigations and applications in high power semiconductor lasers [J]. Infrared Laser Eng.(红外与激光工程), 2008, 37(2):189-194 (in Chinese).

Van Leeuwen R, Xiong Y, Watkins L S, et al. High power 808 nm VCSEL arrays for pumping of compact pulsed high energy Nd:YAG lasers operating at 946 nm and 1 064 nm for blue and UV light generation [J]. SPIE, 2011, 7912:79120Z-1-7.

Van Leeuwen R, Xiong Y, Seurin J F, et al. High-power vertical-cavity surface-emitting lasers for diode pumped solid-state lasers [J]. SPIE, 2012, 8381:83810I-1-7.

Hao Y, Ma J, Yan C, et al. A fundamental mode Nd:GdVO4 laser pumped by a large aperture 808 nm VCSEL [J]. Laser Phys. Lett., 2013, 10(5):055003-1-3.

Chow W W, Choquette K D, Crawford M H, et al. Design, fabrication, and performance of infrared and visible vertical-cavity surface-emitting lasers [J]. IEEE J. Quant. Elect., 1997, 33(10):1810-1824.

Grabherr M, Miller M, Jger R, et al. Commercial VCSELs reach 0.1-W CW output power [J]. SPIE, 2004, 5364:174-182.

Seurin J F, Xu G, Khalfin V, et al. Progress in high-power high-efficiency VCSEL arrays [J]. SPIE, 2009, 7229:722903-1-11.

Hao Y, Shang C, Feng Y, et al. High power 808 nm vertical cavity surface emitting laser with multi-ring-shaped-aperture structure [J]. Laser Phys., 2011, 21(2):376-378.

Zhang Y, Ning Y Q, Zhang L S, et al. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs [J]. Opt. Express, 2011, 19(13):12569-12581.

Zhang Y, Ning Y Q, Zhang J S, et al. Structural design of 808 nm InGaAlAs vertical-cavity surface-emitting laser [J]. Chin. J. Lasers (中国激光), 2011, 38(9):37-42 (in Chinese).

Saha A K, Islam S. An improved model for computing the reflectivity of a AlAs/GaAs based distributed Bragg reflector and vertical cavity surface emitting laser [J]. Opt. Quant. Electron., 2009, 41(11-13):873-882.

Piprek J, Troger T, Schroter B, et al. Thermal conductivity reduction in GaAs-AlAs distributed Bragg reflectors [J]. IEEE Photon. Technol. Lett., 1998, 10(1):81-83.

Boucart J, Starck C, Gaborit F, et al. Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL [J]. IEEE J. Select. Top. Quant. Electron., 1999, 5(3):520-529.

Elabsy A. Temperature dependence of shallow donor states in GaAs-AlxGa1-xAs compositional superlattice [J]. Phys. Scr., 1992, 46(5):473-475

Zhang L S, Ning Y Q, Zhang X, et al. Optimization of n-DBR in high power vertical-cavity surface-emitting laser under a short pulsed operation [J]. Chin. J. Lasers (中国激光), 2012, 39(5):14-21 (in Chinese).

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