低温原子层沉积氧化铝作为有机电致发光器件的封装薄膜

杨永强; 段羽; 陈平; 赵毅

doi:10.3788/fgxb20143509.1087

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低温原子层沉积氧化铝作为有机电致发光器件的封装薄膜

器件制备及器件物理 | 更新时间：2020-08-12

- 低温原子层沉积氧化铝作为有机电致发光器件的封装薄膜
- Deposition of Al₂O₃ Film Using Atomic Layer Deposition Method at Low Temperature as Encapsulation Layer for OLEDs
- 发光学报 2014年35卷第9期页码：1087-1092
- 作者机构：
  
  集成光电子学国家重点联合实验室吉林大学实验区吉林大学电子科学与工程学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  科技部国际科技合作项目（2014DFG12390）();国家高技术研究发展计划（2011AA03A110）();国家重点基础研究发展计划（2010CB327701，20
- DOI：10.3788/fgxb20143509.1087
  中图分类号： TN873.13;TN383+.1
- 收稿日期：2014-02-21，
  
  修回日期：2014-05-27，
  
  纸质出版日期：2014-09-03
- 稿件说明：
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杨永强, 段羽, 陈平等. 低温原子层沉积氧化铝作为有机电致发光器件的封装薄膜[J]. 发光学报, 2014,35(9): 1087-1092

YANG Yong-qiang, DUAN Yu, CHEN Ping etc. Deposition of Al2O3 Film Using Atomic Layer Deposition Method at Low Temperature as Encapsulation Layer for OLEDs[J]. Chinese Journal of Luminescence, 2014,35(9): 1087-1092
杨永强, 段羽, 陈平等. 低温原子层沉积氧化铝作为有机电致发光器件的封装薄膜[J]. 发光学报, 2014,35(9): 1087-1092 DOI： 10.3788/fgxb20143509.1087.

YANG Yong-qiang, DUAN Yu, CHEN Ping etc. Deposition of Al2O3 Film Using Atomic Layer Deposition Method at Low Temperature as Encapsulation Layer for OLEDs[J]. Chinese Journal of Luminescence, 2014,35(9): 1087-1092 DOI： 10.3788/fgxb20143509.1087.

摘要

为了克服传统的原子层深沉积反应温度高于有机材料的玻璃化温度对有机电致发光器件性能产生破坏的缺点，使用低温原子层沉积的方法沉积了Al

薄膜，成功地实现了对OLED的薄膜封装。实验中为了抑制环境温度对ALD薄膜均匀性的影响，增加了每个反应周期的抽气时间，从而可以充分地排出反应副产物，抑制了空位的形成，使得薄膜具有较高的均匀性和致密性。微观形貌分析、钙测试以及寿命测试表明，通过增加ALD的PGT，低温制备的薄膜与高温制备的薄膜的均匀性差别较小，且制备过程对OLED器件的光电性能无明显影响。低温制备的薄膜水汽透过率（WVTR）可以达到8.610

-4

g/（m

d），能够有效地提高有机电致发光器件的寿命。

Abstract

In order to avoid the damage of high reaction temperature to OLEDs

the low-temperature atomic layer deposition (ALD) process was introduced to deposite Al

film for the encapsulation of OLEDs. However

the low temperature condition would decrease the uniformity of the film. In order to suppress the generating of vacancy

the pumping gas time(PGT) was increased during each cycle to discharge the products adequately. The micrographs

calcium test and lifetime test of OLEDs show that the film deposited at low temperature is almost the same with that deposited at high temperature

and the temperature effect to OLEDs is not negligible. The water vapor transmission rate (WVTR) of the film can reach to 8.610

-4

g/(m

so the lifetime of the device with the encapsulation layer can be increased effectively.

关键词

Keywords

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