梯度组分缓冲层诱导的单一立方相Mg<sub>0.3</sub>Zn<sub>0.7</sub>O薄膜外延生长

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梯度组分缓冲层诱导的单一立方相Mg_0.3Zn_0.7O薄膜外延生长

材料合成及性能 | 更新时间：2020-08-12

- 梯度组分缓冲层诱导的单一立方相Mg_0.3Zn_0.7O薄膜外延生长
- Controlled Growth of Pure Cubic Mg_0.3Zn_0.7O Thin Films on c-plane Sapphire by Introducing Graded Buffer Layer
- 发光学报 2014年35卷第9期页码：1040-1045
- 作者机构：
  
  1. 发光学及应用国家重点实验室中国科学院长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院大学北京,100049
  3. 东北师范大学先进光电功能材料研究中心,吉林长春,130024
- 作者简介：
- 基金信息：
  
  国家重点基础研究发展计划（2011CB302006，2011CB302002）();国家自然科学基金（61376054，11174273，11104265，611770
- DOI：10.3788/fgxb20143509.1040
  中图分类号： O484.4
- 收稿日期：2014-04-11，
  
  修回日期：2014-05-14，
  
  网络出版日期：2014-06-27，
  
  纸质出版日期：2014-09-03
- 稿件说明：
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郑剑, 张振中, 王立昆等. 梯度组分缓冲层诱导的单一立方相Mg<sub>0.3</sub>Zn<sub>0.7</sub>O薄膜外延生长[J]. 发光学报, 2014,35(9): 1040-1045

ZHENG Jian, ZHANG Zhen-zhong, WANG Li-kun etc. Controlled Growth of Pure Cubic Mg<sub>0.3</sub>Zn<sub>0.7</sub>O Thin Films on <em>c</em>-plane Sapphire by Introducing Graded Buffer Layer[J]. Chinese Journal of Luminescence, 2014,35(9): 1040-1045
郑剑, 张振中, 王立昆等. 梯度组分缓冲层诱导的单一立方相Mg<sub>0.3</sub>Zn<sub>0.7</sub>O薄膜外延生长[J]. 发光学报, 2014,35(9): 1040-1045 DOI： 10.3788/fgxb20143509.1040.

ZHENG Jian, ZHANG Zhen-zhong, WANG Li-kun etc. Controlled Growth of Pure Cubic Mg<sub>0.3</sub>Zn<sub>0.7</sub>O Thin Films on <em>c</em>-plane Sapphire by Introducing Graded Buffer Layer[J]. Chinese Journal of Luminescence, 2014,35(9): 1040-1045 DOI： 10.3788/fgxb20143509.1040.

摘要

为了实现MgZnO合金带隙全跨度调制，利用低压MOCVD设备，在

c

面蓝宝石衬底上采用MgO籽晶层和组分渐变缓冲层控制立方相Mg

x

Zn

1-

x

O薄膜的生长，获得了Zn组分达到0.7的单一立方相Mg

x

Zn

1-

x

O薄膜，把MgZnO合金带隙调制范围从MgO一侧扩展到了4.45 eV，覆盖了整个日盲紫外波段。对比实验分析表明，这种高Zn组分立方相MgZnO薄膜的生长得益于缓冲层晶格模板的结构诱导作用和适宜的生长温度（350~400 ℃）。 Mg

0.3

Zn

0.7

O基MSM结构紫外探测器响应峰位于270 nm，截止波长295 nm。

Abstract

Developing growth techniques to suppress phase separation is a key point to realize bandgap modulation of MgZnO from 3.3 to 7.8 eV. A graded quasi-homo buffer layer

composed of a MgO layer and a continuously Zn-increased MgZnO layer

was used to grow pure cubic Mg

x

Zn

1-

x

O thin films on

c

-plane sapphire by MOCVD method. The Zn content in rocksalt Mg

x

Zn

1-

x

O is expanded to ~0.7 and the optical bandgap of the films was decreased as low as 4.45 eV

corresponding to the long wavelength edge of solar-blind band. Parallel experiments suggested that the buffer layer played an important role as a structural template for the following growth of Mg

0.3

Zn

0.7

O epilayers and a substrate temperature range from 350 ℃ to 400 ℃ was benefit to increase solution of Zn in the RS-MgZnO films. A photoconductive UV detector based on a Mg

0.3

Zn

0.7

O film exhibits responsivity peak at 270 nm and a cutoff wavelength at 295 nm.

关键词

Keywords

references

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Bendersky L A, Takeuchi I, Chang K S, et al. Microstructural study of epitaxial Zn1-xMgxO composition spreads [J]. J. Appl. Phys., 2005, 98(8):083526-1-6.

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Wang L K, Ju Z G, Zhang J Y, et al. Single-crystalline cubic MgZnO films and their application in deep-ultraviolet optoelectronic devices [J]. Appl. Phys. Lett., 2009, 95(13):131113-1-3.

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Kunisu M, Tanaka I, Yamamoto T, et al. The formation of a rock-salt type ZnO thin film by low-level alloying with MgO[J]. J. Phys.: Condensed Matter, 2004, 16(21):3801- 3806.

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