红、绿CdSe@ZnS量子点配比对三波段标准白光LED器件的影响

陈赟汉; 张雪; 周洁; 曹进; 张建华; 殷录乔; 朱文清

doi:10.3788/fgxb20143508.0992

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红、绿CdSe@ZnS量子点配比对三波段标准白光LED器件的影响

器件制备及器件物理 | 更新时间：2020-08-12

- 红、绿CdSe@ZnS量子点配比对三波段标准白光LED器件的影响
- Effect of Red, Green CdSe@ZnS Quantum Dots Ratios on Standard Three-band White LED Devices
- 发光学报 2014年35卷第8期页码：992-997
- 作者机构：
  
  1. 上海大学材料科学与工程学院上海,200444
  2. 上海大学新型显示技术及应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  上海自然科学基金（09ZR1411900）();上海市科委项目（11100703200）();上海大学创新基金（sdcx2012063）资助项目()
- DOI：10.3788/fgxb20143508.0992
  中图分类号： TN383+.2
- 收稿日期：2014-05-04，
  
  修回日期：2014-06-15，
  
  纸质出版日期：2014-08-03
- 稿件说明：
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陈赟汉, 张雪, 周洁等. 红、绿CdSe@ZnS量子点配比对三波段标准白光LED器件的影响[J]. 发光学报, 2014,35(8): 992-997

CHEN Yun-han, ZHANG Xue, ZHOU Jie etc. Effect of Red, Green CdSe@ZnS Quantum Dots Ratios on Standard Three-band White LED Devices[J]. Chinese Journal of Luminescence, 2014,35(8): 992-997
陈赟汉, 张雪, 周洁等. 红、绿CdSe@ZnS量子点配比对三波段标准白光LED器件的影响[J]. 发光学报, 2014,35(8): 992-997 DOI： 10.3788/fgxb20143508.0992.

CHEN Yun-han, ZHANG Xue, ZHOU Jie etc. Effect of Red, Green CdSe@ZnS Quantum Dots Ratios on Standard Three-band White LED Devices[J]. Chinese Journal of Luminescence, 2014,35(8): 992-997 DOI： 10.3788/fgxb20143508.0992.

摘要

将一步法合成的具有梯度合金结构的红光、绿光CdSe@ZnS量子点与硅胶均匀混合后，作为光转换层涂覆到蓝色InGaN LED芯片上，制备了不含荧光材料的三波段白光LED器件。研究了峰值为650 nm和550 nm的高效率红、绿量子点在硅胶中的含量及配比对白光LED色坐标以及效率的影响。结果表明，当红、绿量子点配比为2：3时，可得到发射纯正白光的QDs-LED器件，色坐标为（0.322 8，0.335 9）、色温为5 725 K，功率效率为26.61 lm/W，显色指数为72.7。光谱中红、蓝、绿三色发光峰的半高宽分别为30，25，38 nm，表明器件具有很好的单色性和高色纯度。

Abstract

Highly-fluorescent green and red CdSe/ZnS core/shell gradient alloy quantum dots (QDs) were synthesized by one-step method. The phosphine-free three-band white light LEDs were fabricated by directly incorporating QDs/epoxy composites with blue InGaN chip. The influences of the content and proportion of red (650 nm) and green (550 nm) QDs on the color coordinate and efficiency of white LED were researched. When the red/green QDs ratio is 2:3

the standard three-band RGB QDs-WLED can be achieved with a CIE-1931 color coordinates of (0.322 8

0.335 9)

CCT of 5 725 K

CRI of 72.7

and power efficiency of 26.61 lm/W. FWHM of the red

blue

and green peak of the white QDs-LED is 30

and 38 nm

respectively.

关键词

Keywords

references

Rossetti R, Nakahara S, Brus L E, et al. Quantum size effects in the redox potentials, resonance raman-spectra, and elecronics-spectra of cds crystallites in aqueous-solution [J]. Chem. Phys., 1983, 79(3):1086-1109.

Zhao Y B, Su Z S, Jin F M, et al. High efficiency phosphorescent organic light-emitting devices based on multiple quantum well structure [J]. Chin. J. Lumin.(发光学报), 2012, 33(8):803-807 (in Chinese).

Bruchez M, Moronne M, Gin P, et al. Semiconductor nanocrystals as fluorescent biological labels. [J]. Science, 1998, 281(5385):2013-2016

Reiss P, Protiere M, Li L. Core/shell semiconductor nanocrystals [J]. Small, 2009, 5:154-168.

Talapin D V, Mekis I, Gotzinger S, et al. CdSe/CdS/ZnS and CdSe/ZnSe/ZnS core-shell-shell nanocrystals [J]. Phys. Chem. B, 2004, 108(49):18826-18831.

Xie R, Kolb U, Li J, et al. Synthesis and characterization of highly luminescent CdSe-core CdS/Zn0.5Cd0.5S/ZnS multishell nanocrystals [J]. Am. Chem. Soc., 2005, 127(20):7480-7488.

Chen H S, Wang S J. White-light emission from organics-capped ZnSe quantum dots and application in white-light-emitting diodes [J]. Appl. Phys. Lett., 2005, 86(13):131905-1-3.

Lim J, Jun S, Jang E, et al. Preparation of highly luminescent nanocrystals and their application to light-emitting diodes [J]. Adv. Mater., 2007, 19(15):1927-1931.

Wang Y C, Wang M, Su X Y, et al. First principles on the electron structure and optical properties of the Mg-doped CdSe system [J]. Chin. J. Lumin.(发光学报), 2010, 31(6):842-847 (in Chinese).

Liu A H, Yang L Y. Improved performance of organic light emitting diodes using combined hole-injecting layer [J]. Chin. J. Lumin.(发光学报), 2012, 33(4):422-427 (in Chinese).

Lee J, Sundar V C, Bawendi M G, et al. Full color emission from Ⅱ-Ⅵ semiconductor quantum dot polymer composites [J]. Adv. Mater., 2000, 12:1102-1205.

Chen H S, Hsu C K, Hong H Y. InGaN-CdSe-ZnSe quantum dots white LEDs [J]. IEEE Photon. Technol. Lett., 2006,18:193-195.

Wang H, Lee K S, Ryu J H, et al. White light emitting diodes realized by using an active packaging method with CdSe/ZnS quantum dots dispersed in photosensitive epoxy resins [J]. Nanotechnol., 2008, 19(14):145202-1-5.

Jang H S, Yang H, Kim S W, et al. White light-emitting diodes with excellent color rendering based on organically capped CdSe quantum dots and Sr3SiO5:Ce3+,Li+ phosphors [J]. Adv. Mater., 2008, 20:2696-2702.

Jang E, Jun S, Jang H, et al. White-light-emitting diodes with quantum dot color converters for display backlights [J]. Adv. Mater., 2011, 22:3076-3080.

Bae W K, Char K, Lee S. Single-step synthesis of quantum dots with chemical composition gradients [J]. Chem. Mater., 2008, 20:531-539.

Jung C J, Lee Y K. Kinetic studies on the formation of various Ⅱ-Ⅵ semiconductor nanocrystals and synthesis of gradient alloy quantum dots emitting in the entire visible range [J]. Mater. Chem., 2012, 22(10):10827-1-7.

Zhu Y, Narendran N. Investigation of romote-phosphor white light emitting diode with mutiple phosphor layers [J]. Appl. Phys., 2010, 49(10):100203-1-4.

Yutaka K, Ferry I, Hendri W, et al. Fabrication and characterization of a yellow-emitting BCNO phosphor for white light-emitting diodes [J]. Electrochem. Solid-State Lett., 2009, 12(3):J33-J38.

Narendran N, Gu Y, Freyssinier J P, et al. Solid-state lighting: Failure analysis of white LEDs [J]. Cryst. Growth, 2004, 268(3-4):449-456.

Regina M M, Gerd M, Michael R, et al. Highly efficient all-nitride phosphor-converted white light emitting diode [J]. Phys. Stat. Sol., 2005, 202(9):1727-1732.

Wang L, Rong J L, Cao J, et al. Influence of agglomeration in CdSe/ZnS quantum dot on the performances of light emitting diode [J]. Chin. J. Lumin.(发光学报), 2012, 33(12):1351-1355 (in Chinese).

Wu H, Zhang X, Guo C, et al. Three-band white light from InGaN-based blue LED chip precoated with green/red phosphors [J]. IEEE Photon. Technol. Lett., 2005, 17(6):1160-1162.

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